amplification Unit: -0.3 +0.2 Features 0.65±0

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amplification Unit: -0.3 +0.2 Features 0.65±0

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2SC3707
amplification
Unit:
-0.3
+0.2
Features
0.65±0.15
+0.25 -0.05
0.65±0.15
-0.1
Parameter Collector base voltage Collector emitter voltage Emitter base voltage Collector current Collector power dissipation Junction temperature Storage temperature
Symbol VCBO VCEO VEBO Tstg
Ratings +150
Unit
1:Bae 2:Emitter 3:Collector
JEDEC:TO-236 EIAJ:SC-59 Mini Type Package
Marking symbol
Electrical Characteristics
Parameter Collector cutoff current Emitter cutoff current Forward current transfer ratio Transition frequency Collector output capacitance Foward transfer gain Maximum unilateral power gain Noise figure
(Ta=25°C)
Symbol ICBO IEBO S21e Conditions 10V, 1.5V, 1mA, 800MHz 1MHz 1mA, 800MHz 1mA, 800MHz 1mA, 800MHz Unit
Note: Handle product with care because this sensitive electrostatic breakdown structure.
Absolute Maximum Ratings
(Ta=25°C)
0.4±0.2
0.16 -0.06
+0.2
+0.1
-0.05
Possible with small current voltage. High transition frequency Mini type package, allowing downsizing equipment automatic insertion through tape packing magazine packing.
0.95
-0.05
1.9±0.2
+0.2
0.95
+0.1
1.45
Ta=25°C IB=50µA 45µA 40µA 35µA 30µA 25µA 20µA 15µA 10µA
2SC3707
VCE=1V
Collector power dissipation (mW)
Collector current (mA)
Collector current (mA)
25°C Ta=75°C -25°C
Ambient temperature (°C)
Collector emitter voltage
Base emitter voltage
VCE(sat)
Collector emitter saturation voltage VCE(sat)
Ta=75°C 0.03 0.01 25°C -25°C IC/IB=10
VCE=1V
VCE=1V f=800MHz Ta=25°C
Forward current transfer ratio
Transition frequency (GHz)
Ta=75°C 25°C -25°C
Collector current (mA)
Collector current (mA)
Collector current (mA)
Collector output capacitance (pF)
IE=0 f=1MHz Ta=25°C
Maximum unilateral power gain (dB)
VCE=1V f=800MHz Ta=25°C
VCE=1V (Rg=50) f=800MHz Ta=25°C
Noise figure (dB)
Collector base voltage
Collector current (mA)
Collector current (mA)
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2001

amplification Unit: -0.3 +0.2 Features 0.65±0

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