band low-noise amplification Unit: -0.3 +0.2 Featu

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band low-noise amplification Unit: -0.3 +0.2 Featu

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2SC3704
band low-noise amplification
Unit:
-0.3
+0.2
Features
0.65±0.15
+0.25 -0.05
0.65±0.15
noise figure High gain. High transition frequency Mini type package, allowing downsizing equipment automatic insertion through tape packing magazine packing.
0.95
-0.05
1.9±0.2
+0.2
0.95
-0.05
+0.1
1.45
-0.1
Parameter Collector base voltage Collector emitter voltage Emitter base voltage Collector current Collector power dissipation Junction temperature Storage temperature
Symbol VCBO VCEO VEBO Tstg
Ratings +150
Unit
1:Bae 2:Emitter 3:Collector
JEDEC:TO-236 EIAJ:SC-59 Mini Type Package
Marking symbol
Electrical Characteristics
Parameter Collector cutoff current Emitter cutoff current Forward current transfer ratio Transition frequency Collector output capacitance Noise figure Maximum unilateral power gain Foward transfer gain
(Ta=25°C)
Symbol ICBO IEBO hFE1 hFE2 S21e Conditions 15V, 20mA 20mA, 0.8GHz 10V, 1MHz 7mA, 800MHz 20mA, 800MHz 20mA, 800MHz Unit
Absolute Maximum Ratings
(Ta=25°C)
0.4±0.2
0.16 -0.06
+0.2
+0.1
IB=400µA Ta=25°C 350µA 300µA 250µA 200µA 150µA 100µA 50µA
2SC3704
VCE=8V
Collector power dissipation (mW)
Collector current (mA)
Collector current (mA)
Ta=75°C
25°C -25°C
Ambient temperature (°C)
Collector emitter voltage
Base emitter voltage
VCE(sat)
Collector emitter saturation voltage VCE(sat)
Ta=75°C, 25°C, -25°C 0.03 0.01 IC/IB=10
VCE=8V
VCE=8V f=800MHz Ta=25°C
Forward current transfer ratio
Transition frequency (GHz)
Ta=75°C 25°C -25°C
Collector current (mA)
Collector current (mA)
Collector current (mA)
Collector output capacitance (pF)
IE=0 f=1MHz Ta=25°C
Maximum unilateral power gain (dB)
VCE=8V f=800MHz Ta=25°C
VCE=8V (Rg=50W) f=800MHz Ta=25°C
Noise figure (dB)
Collector base voltage
Collector current (mA)
Collector current (mA)
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2001

band low-noise amplification Unit: -0.3 +0.2 Featu

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