REFRACTORY/GOLD METALLIZATION EMITTER SITE BALLASTED RUGGEDIZED VSWR T

The Datasheet Archive - 100 Million Datasheets from 7500 Manufacturers.

REFRACTORY/GOLD METALLIZATION EMITTER SITE BALLASTED RUGGEDIZED VSWR T

Datasheet Thumbnail

Top Searches for this datasheet

AM81214-060
REFRACTORY/GOLD METALLIZATION EMITTER SITE BALLASTED RUGGEDIZED VSWR THERMAL RESISTANCE INPUT/OUTPUT MATCHING OVERLAY GEOMETRY METAL/CERAMIC HERMETIC PACKAGE POUT MIN. WITH GAIN
.400 .400 2NLFL (S042) hermetically sealed ORDER CODE AM81214-060 BRANDING 81214-60
DESCRIPTION AM81214-060 device high power transistor specifically designed L-Band radar pulsed output driver applications. device capable operation over wide range pulse widths, duty cycles, temperatures capable withstanding output VSWR rated conditions. thermal resistance computerized automatic wire bonding techniques ensure high reliability product consistency. AM81214-060 supplied AMPACHermetic Metal/Ceramic package with internal Input/Output matching structures. ABSOLUTE MAXIMUM RATINGS case
Symbol Parameter
CONNECTION
Collector Base
Emitter Base
Value
Unit
PDISS
Power Dissipation* Device Current*
100°C)
+200
Collector-Supply Voltage* Junction Temperature (Pulsed Operation) Storage Temperature
THERMAL DATA RTH(j-c) Junction-Case Thermal Resistance* °C/W
*Applies only rated amplifier operation
August 1992
AM81214-060
ELECTRICAL SPECIFICATIONS case STATIC
Valu Symbol Test Conditions Min. Typ. Max. Unit
BVCBO BVEBO BVCER ICES
20mA 40mA
DYNAMIC
Value Symbol Test Conditions Min. Typ. Max. Unit
POUT
Note:
1215 1400MHz 1215 1400MHz 1215 1400MHz
1000
Widt Duty Cycle
AM81214-060
TYPICAL PERFORMANCE TYPICAL BROADBAND POWER AMPLIFIER
RELATIVE POWER OUTPUT COLLECTOR EFFICIENCY COLLECTOR VOLTAGE
MAXIMUM THERMAL RESISTANCE PULSE WIDTH
AM81214-060
IMPEDANCE DATA
TYPICAL INPUT IMPEDANCE
12.0 ohms
FREQ.
10.0 11.0
10.0
TYPICAL COLLECTOR LOAD IMPEDANCE
12.0 ohms
AM81214-060
TEST CIRCUIT
PACKAGE MECHANICAL DATA
AM81214-060
Information furnished believed accurate reliable. However, SGS-THOMSON Microelectronics assumes responsability consequences such information infringement patents other rights third parties which results from use. license granted implication otherwise under patent patent rights SGS-THOMSON Microelectronics. Specifications mentioned this publication subject change without notice. This publication supersedes replaces information previously supplied. SGS-THOMSON Microelectronics products authorized ascritical components life support devices systems without express written approval SGS-THOMSON Microelectonics. 1994 SGS-THOMSON Microelectronics Rights Reserved SGS-THOMSON Microelectronics GROUP COMPANIES Australia Brazil France Germany Hong Kong Italy Japan Korea Malaysia Malta Morocco Netherlands Singapore Spain Sweden Switzerland Taiwan Thailand United Kingdom U.S.A

REFRACTORY/GOLD METALLIZATION EMITTER SITE BALLASTED RUGGEDIZED VSWR T

Top Searches for this datasheet

Other recent searches