200V Ultrafast Diodes MUR820 RURP820 ultrafast diodes with soft r

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200V Ultrafast Diodes MUR820 RURP820 ultrafast diodes with soft r

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MUR820, RURP820
200V Ultrafast Diodes
MUR820 RURP820 ultrafast diodes with soft recovery characteristics (trr 25ns). They have forward voltage drop silicon nitride passivated ion-implanted epitaxial planar construction. These devices intended freewheeling/ clamping diodes rectifiers variety switching power supplies other power switching applications. Their stored charge ultrafast soft recovery minimize ringing electrical noise many power switching circuits reducing power loss switching transistors. Formerly developmental type TA09223.
Features
Ultrafast with Soft Recovery <25ns Operating Temperature. .175oC Reverse Voltage .200V Avalanche Energy Rated Planar Construction
Applications
Switching Power Supplies Power Switching Circuits General Purpose
Ordering Information
PART NUMBER MUR820 RURP820 PACKAGE TO-220AC TO-220AC BRAND MUR820 RURP820
Packaging
JEDEC TO-220AC
ANODE CATHODE CATHODE (FLANGE)
NOTE: When ordering, entire part number.
Symbol
Absolute Maximum Ratings 25oC, Unless Otherwise Specified
MUR820 RURP820 Peak Repetitive Reverse Voltage VRRM Working Peak Reverse Voltage .VRWM Blocking Voltage Average Rectified Forward Current IF(AV) 157oC) Repetitive Peak Surge Current IFRM (Square Wave, 20kHz) Nonrepetitive Peak Surge Current IFSM (Halfwave, Phase, 60Hz) Maximum Power Dissipation Avalanche Energy (See Figures .EAVL Operating Storage Temperature TSTG, UNITS
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1-888-INTERSIL 321-724-7143 Copyright
Intersil Corporation 2000
MUR820, RURP820
Electrical Specifications
SYMBOL 150oC 200V 200V, 150oC dIF/dt 200A/µs dIF/dt 200A/µs DEFINITIONS Instantaneous forward voltage 300µs, 2%). Instantaneous reverse current. Reverse recovery time (See Figure summation Time reach peak reverse current (See Figure Time from peak projected zero crossing based straight line from peak through (See Figure Reverse recovery charge. Junction Capacitance. Thermal resistance junction case. Pulse width. Duty cycle. dIF/dt 200A/µs dIF/dt 200A/µs dIF/dt 200A/µs 10V, 25oC, Unless Otherwise Specified TEST CONDITION 0.975 0.895 UNITS
oC/W
Typical Performance Curves
REVERSE CURRENT (µA) 175oC
FORWARD CURRENT
100oC
100oC
175oC
25oC
0.01 25oC
0.001
FORWARD VOLTAGE
REVERSE VOLTAGE
FIGURE FORWARD CURRENT FORWARD VOLTAGE
FIGURE REVERSE CURRENT REVERSE VOLTAGE
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MUR820, RURP820 Typical Performance Curves
25oC, 200A/µs RECOVERY TIMES (ns) RECOVERY TIMES (ns)
(Continued)
100oC, 200A/µs
FORWARD CURRENT
FORWARD CURRENT
FIGURE trr, CURVES FORWARD CURRENT
FIGURE trr, CURVES FORWARD CURRENT
175oC, 200A/µs RECOVERY TIMES (ns)
IF(AV) AVERAGE FORWARD CURRENT
WAVE
FORWARD CURRENT
CASE TEMPERATURE (oC)
FIGURE trr, CURVES FORWARD CURRENT
FIGURE CURRENT DERATING CURVE
JUNCTION CAPACITANCE (pF) REVERSE VOLTAGE
FIGURE JUNCTION CAPACITANCE REVERSE VOLTAGE
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MUR820, RURP820 Test Circuits Waveforms
AMPLITUDE CONTROL dIF/dt CONTROL
CURRENT SENSE
IGBT
0.25
FIGURE TEST CIRCUIT
40mH EAVL 1/2LI2 [VR(AVL) /(VR(AVL) VDD)] IGBT (BVCES VR(AVL)) CURRENT SENSE
FIGURE WAVEFORMS DEFINITIONS
VAVL
FIGURE AVALANCHE ENERGY TEST CIRCUIT
FIGURE AVALANCHE CURRENT VOLTAGE WAVEFORMS
Intersil semiconductor products manufactured, assembled tested under ISO9000 quality systems certification.
Intersil semiconductor products sold description only. Intersil Corporation reserves right make changes circuit design and/or specifications time without notice. Accordingly, reader cautioned verify that data sheets current before placing orders. Information furnished Intersil believed accurate reliable. However, responsibility assumed Intersil subsidiaries use; infringements patents other rights third parties which result from use. license granted implication otherwise under patent patent rights Intersil subsidiaries.
information regarding Intersil Corporation products, site www.intersil.com 3-176
MUR820, RURP820
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200V Ultrafast Diodes MUR820 RURP820 ultrafast diodes with soft r

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