2385.3 22A, 100V, 0.080 Ohm, N-Channel Power MOSFETs These N

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2385.3 22A, 100V, 0.080 Ohm, N-Channel Power MOSFETs These N

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RFP22N10, RF1S22N10SM
2385.3
22A, 100V, 0.080 Ohm, N-Channel Power MOSFETs
These N-Channel power MOSFETs manufactured using MegaFET process. This process, which uses feature sizes approaching those integrated circuits gives optimum utilization silicon, resulting outstanding performance. They were designed applications such switching regulators, switching converters, motor drivers, relay drivers. These transistors operated directly from integrated circuits. Formerly developmental type TA9845.
Features
22A, 100V rDS(ON) 0.080 Rating Curve (Single Pulse) Power Dissipation Limited Nanosecond Switching Speeds Linear Transfer Characteristics High Input Impedance 175oC Operating Temperature Related Literature TB334 "Guidelines Soldering Surface Mount Components Boards"
Ordering Information
PART NUMBER RFP22N10 RF1S22N10SM PACKAGE TO-220AB TO-263AB BRAND RFP22N10 F1S22N10
Symbol
NOTE: When ordering entire part number. suffix, obtain TO-263AB variant tape reel, e.g. RF1S22N10SM9A.
Packaging
JEDEC TO-220AB
SOURCE DRAIN GATE GATE SOURCE
JEDEC TO-263AB
DRAIN (FLANGE)
DRAIN (FLANGE)
4-499
CAUTION: These devices sensitive electrostatic discharge; follow proper Handling Procedures. http://www.intersil.com 407-727-9207 Copyright Intersil Corporation 1999
RFP22N10, RF1S22N10SM
Absolute Maximum Ratings 25oC, Unless Otherwise Specified
RFP22N10, RF1S22N10SMS Drain Source Voltage (Note VDSS Drain Gate Voltage (RGS (Note .VDGR Gate Source Voltage Continuous Drain Current Pulsed Drain Current Maximum Power Dissipation Linear Derating Factor Operating Storage Temperature TSTG Maximum Temperature Soldering Leads 0.063in (1.6mm) from Case 10s. Package Body 10s, Techbrief .Tpkg 0.67 UNITS W/oC
CAUTION: Stresses above those listed "Absolute Maximum Ratings" cause permanent damage device. This stress only rating operation device these other conditions above those indicated operational sections this specification implied.
NOTE: 25oC 150oC.
Electrical Specifications
PARAMETER
25oC, Unless Otherwise Specified SYMBOL BVDSS VGS(TH) IDSS TEST CONDITIONS 250µA, (Figure VDS, 250µA (Figure 80V, 80V, 150oC 80V, 22A, 3.64 Ig(REF) (Figure TO-220 TO-263 ±100 0.080 UNITS
oC/W oC/W
Drain Source Breakdown Voltage Gate Source Threshold Voltage Zero-Gate Voltage Drain Current
Gate Source Leakage Current Drain Source Resistance (Note Turn-On Time Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-Off Time Total Gate Charge Gate Charge Threshold Gate Charge Thermal Resistance Junction Case Thermal Resistance Junction Ambient
IGSS rDS(ON) t(ON) td(ON) td(OFF) t(OFF) QG(TOT) QG(10) QG(TH)
±20V, 22A, (Figure 50Vwwwwwwwww, 11A, 4.5, 10V, (Figure
Source Drain Diode Specifications
PARAMETER Source Drain Diode Voltage (Note Diode Reverse Recovery Time NOTE: Pulse Test: Pulse Duration 300µs maximum, duty cycle SYMBOL 22A, dISD/dt 100A/µs TEST CONDITIONS UNITS
4-500
RFP22N10, RF1S22N10SM Typical Performance Curves
POWER DISSIPATION MULTIPLIER CASE TEMPERATURE (oC) DRAIN CURRENT
Unless otherwise Specified
CASE TEMPERATURE (oC)
FIGURE NORMALIZED POWER DISSIPATION CASE TEMPERATURE
FIGURE MAXIMUM CONTINUOUS DRAIN CURRENT CASE TEMPERATURE
(CONTINUOUS) DRAIN CURRENT OPERATION THIS AREA LIMITED rDS(ON)
OPERATION
IAS, AVALANCHE CURRENT
RATED SINGLE PULSE 25oC
STARTING 25oC STARTING 150oC (L)(IAS)/(1.3 RATED BVDSS VDD) (L/R)ln[(IAS R)/(1.3 RATED BVDSS VDD) tAV, TIME AVALANCHE (ms)
VDSS(MAX) 100V DRAIN SOURCE VOLTAGE
0.01
FIGURE FORWARD BIAS SAFE OPERATING AREA
FIGURE UNCLAMPED INDUCTIVE SWITCHING CAPABILITY
DRAIN CURRENT DRAIN CURRENT
PULSE DURATION 80µs DUTY CYCLE 0.5% MAX. -55oC 175oC 25oC
PULSE DURATION 80µs DUTY CYCLE 0.5% 25oC
DRAIN SOURCE VOLTAGE GATE SOURCE VOLTAGE
FIGURE SATURATION CHARACTERISTICS
FIGURE TRANSER CHARACTERISTICS
4-501
RFP22N10, RF1S22N10SM Typical Performance Curves
NORMALIZED DRAIN SOURCE BREAKDOWN VOLTAGE NORMALIZED DRAIN SOURCE RESISTANCE 250µA
Unless otherwise Specified (Continued)
22A, PULSE DURATION 80µs DUTY CYCLE 0.5%
JUNCTION TEMPERATURE (oC)
JUNCTION TEMPERATURE (oC)
FIGURE NORMALIZED DRAIN SOURCE BREAKDOWN VOLTAGE JUNCTION TEMPERATURE
FIGURE NORMALIZED DRAIN SOURCE RESISTANCE JUNCTION TEMPERATURE
1.50 250µA NORMALIZED GATE THRESHOLD VOLTAGE 1.25 1.00 0.75 0.50 0.25 CAPACITANCE (pF)
2500 1MHz CISS CRSS COSS
2000
1500 CISS
1000
CRSS JUNCTION TEMPERATURE (oC)
COSS
DRAIN SOURCE VOLTAGE
FIGURE NORMALIZED GATE THRESHOLD VOLTAGE JUNCTION TEMPERATURE
FIGURE CAPACITANCE DRAIN SOURCE VOLTAGE
VDS, DRAIN SOURCE VOLTAGE
VGS, GATE SOURCE VOLTAGE GATE SOURCE VOLTAGE 4.55 IG(REF)
VDSS
VDSS
0.75VDSS 0.50VDSS 0.25VDSS 0.75VDSS 0.50VDSS 0.25VDSS
DRAIN SOURCE VOLTAGE IG(REF) IG(ACT) TIME (µs) IG(REF) IG(ACT)
NOTE: Refer Intersil Application Notes AN7254 AN7260. FIGURE NORMALIZED SWITCHING WAVEFORMS CONSTANT GATE CURRENT
4-502
RFP22N10, RF1S22N10SM
Test Circuits Waveforms
BVDSS VARY OBTAIN REQUIRED PEAK
0.01
FIGURE UNCLAMPED ENERGY TEST CIRCUIT
FIGURE UNCLAMPED ENERGY WAVEFORMS
td(ON)
tOFF td(OFF)
PULSE WIDTH
FIGURE SWITCHING TIME TEST CIRCUIT
FIGURE RESISTIVE SWITCHING WAVEFORMS
Qg(TOT)
IG(REF) IG(REF)
FIGURE GATE CHARGE TEST CIRCUIT
FIGURE GATE CHARGE WAVEFORMS
4-503
RFP22N10, RF1S22N10SM
Intersil semiconductor products manufactured, assembled tested under ISO9000 quality systems certification.
Intersil semiconductor products sold description only. Intersil Corporation reserves right make changes circuit design and/or specifications time without notice. Accordingly, reader cautioned verify that data sheets current before placing orders. Information furnished Intersil believed accurate reliable. However, responsibility assumed Intersil subsidiaries use; infringements patents other rights third parties which result from use. license granted implication otherwise under patent patent rights Intersil subsidiaries.
information regarding Intersil Corporation products, site http://www.intersil.com
Sales Office Headquarters
NORTH AMERICA Intersil Corporation 883, Mail Stop 53-204 Melbourne, 32902 TEL: (407) 724-7000 FAX: (407) 724-7240 EUROPE Intersil Mercure Center 100, Fusee 1130 Brussels, Belgium TEL: (32) 2.724.2111 FAX: (32) 2.724.22.05 ASIA Intersil (Taiwan) Ltd. 7F-6, Hsing North Road Taipei, Taiwan Republic China TEL: (886) 2716 9310 FAX: (886) 2715 3029
4-504

2385.3 22A, 100V, 0.080 Ohm, N-Channel Power MOSFETs These N

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