400V 600V Ultrafast Diodes MUR840, MUR860, RURP840 RURP860 forwar
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MUR840, MUR860, RURP840, RURP860
400V 600V Ultrafast Diodes
MUR840, MUR860, RURP840 RURP860 forward voltage drop ultrafast recovery rectifiers (trr 60ns). They glass-passivated ion-implanted, epitaxial construction. These devices intended output rectifiers flywheel diodes variety high-frequency pulse-width modulated switching regulators. Their stored charge attendant fast reverse-recovery behavior minimize electrical noise generation many circuits markedly reduce turn-on dissipation associated power switching transistors. Formerly developmental type TA09616.
Features
Ultrafast with Soft Recovery <60ns Operating Temperature 175oC Reverse Voltage 600V Avalanche Energy Rated Planar Construction
Applications
Switching Power Supplies Power Switching Circuits General Purpose
Ordering Information
PART NUMBER MUR840 RURP840 MUR860 RURP860 PACKAGE TO-220AC TO-220AC TO-220AC TO-220AC BRAND MUR840 RURP840 MUR860 RURP860
Packaging
JEDEC TO-220AC
ANODE CATHODE CATHODE (FLANGE)
NOTE: When ordering, entire part number.
Symbol
Absolute Maximum Ratings
25oC, Unless Otherwise Specified MUR840 RURP840 MUR860 RURP860 UNITS
Peak Repetitive Reverse Voltage VRRM Working Peak Reverse Voltage VRWM Blocking Voltage Average Rectified Forward Current .IF(AV) 155oC) Repetitive Peak Surge Current IFRM (Square Wave, 20kHz) Nonrepetitive Peak Surge Current IFSM (Halfwave, Phase, 60Hz) Maximum Power Dissipation Avalanche Energy (See Figures EAVL Operating Storage Temperature TSTG, Maximum Lead Temperature Soldering Leads 0.063 (1.6mm) from case Package Body 10s, Tech Brief 334. TPKG
©2001 Fairchild Semiconductor Corporation
MUR840, MUR860, RURP840, RURP86 Rev.
MUR840, MUR860, RURP840, RURP860
Electrical Specifications
25oC, Unless Otherwise Specified MUR840, RURP840 SYMBOL TEST CONDITION 150oC 400V 600V 400V, 150oC 600V, 150oC dIF/dt 200A/µs dIF/dt 200A/µs DEFINITIONS Instantaneous forward voltage 300µs, 2%). Instantaneous reverse current. Reverse recovery time (See Figure summation Time reach peak reverse current (See Figure Time from peak projected zero crossing based straight line from peak through (See Figure Reverse recovery charge. Junction Capacitance. Thermal resistance junction case. pulse width. duty cycle. dIF/dt 200A/µs dIF/dt 200A/µs dIF/dt 200A/µs 10V, MUR860, RURP860 UNITS
oC/W
Typical Performance Curves
REVERSE CURRENT (µA) 175oC 100oC
FORWARD CURRENT
100oC 175oC 25oC
25oC
0.01
FORWARD VOLTAGE
REVERSE VOLTAGE
FIGURE FORWARD CURRENT FORWARD VOLTAGE
FIGURE REVERSE CURRENT REVERSE VOLTAGE
©2001 Fairchild Semiconductor Corporation
MUR840, MUR860, RURP840, RURP86 Rev.
MUR840, MUR860, RURP840, RURP860 Typical Performance Curves
25oC, dIF/dt 200A/µs RECOVERY TIMES (ns) RECOVERY TIMES (ns)
(Continued)
100oC, dIF/dt 200A/µs
FORWARD CURRENT
FORWARD CURRENT
FIGURE trr, CURVES FORWARD CURRENT
FIGURE trr, CURVES FORWARD CURRENT
IF(AV) AVERAGE FORWARD CURRENT
175oC, dIF/dt 200A/µs RECOVERY TIMES (ns)
WAVE
FORWARD CURRENT
CASE TEMPERATURE (oC)
FIGURE trr, CURVES FORWARD CURRENT
FIGURE CURRENT DERATING CURVE
JUNCTION CAPACITANCE (pF)
REVERSE VOLTAGE
FIGURE JUNCTION CAPACITANCE REVERSE VOLTAGE
©2001 Fairchild Semiconductor Corporation
MUR840, MUR860, RURP840, RURP86 Rev.
MUR840, MUR860, RURP840, RURP860 Test Circuits Waveforms
AMPLITUDE CONTROL dIF/dt CONTROL
CURRENT SENSE
IGBT
0.25
FIGURE TEST CIRCUIT
40mH EAVL 1/2LI2 [VR(AVL) /(VR(AVL) VDD)] IGBT (BVCES VR(AVL)) CURRENT SENSE
FIGURE WAVEFORMS DEFINITIONS
VAVL
FIGURE AVALANCHE ENERGY TEST CIRCUIT
FIGURE AVALANCHE CURRENT VOLTAGE WAVEFORMS
©2001 Fairchild Semiconductor Corporation
MUR840, MUR860, RURP840, RURP86 Rev.
TRADEMARKS
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Preliminary
First Production
Identification Needed
Full Production
Obsolete
Production
This datasheet contains specifications product that been discontinued Fairchild semiconductor. datasheet printed reference information only.
Rev.
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