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1000V Ultrafast Diodes MUR8100E RUR8100 ultrafast diodes (trr 75n
Top Searches for this datasheetMUR8100E, RURP8100 1000V Ultrafast Diodes MUR8100E RUR8100 ultrafast diodes (trr 75ns) with soft recovery characteristics. They have forward voltage drop planar, silicon nitride passivated, ion-implanted, epitaxial construction. These devices intended energy steering/ clamping diodes rectifiers variety switching power supplies other power switching applications. Their stored charge ultrafast recovery with soft recovery characteristics minimize ringing electrical noise many power switching circuits, thus reducing power loss switching transistor. Formerly developmental type TA09617. Features Ultrafast with Soft Recovery <75ns Operating Temperature 175oC Reverse Voltage 1000V Avalanche Energy Rated Planar Construction Applications Switching Power Supply Power Switching Circuits General Purpose Ordering Information PART NUMBER MUR8100E RURP8100 PACKAGE TO-220AC TO-220AC BRAND MUR8100 RURP8100 Packaging JEDEC TO-220AC ANODE CATHODE CATHODE (FLANGE) NOTE: When ordering, entire part number. Symbol Absolute Maximum Ratings 25oC, Unless Otherwise Specified MUR8100E RURP8100 UNITS Peak Repetitive Reverse Voltage VRRM Working Peak Reverse Voltage VRWM Blocking Voltage Average Rectified Forward Current IF(AV) 155oC) Repetitive Peak Surge Current IFRM (Square Wave 20kHz) Nonrepetitive Peak Surge Current IFSM (Halfwave Phase 60Hz) Maximum Power Dissipation Avalanche Energy (See Figures EAVL Operating Storage Temperature .TSTG, 1000 1000 1000 ©2001 Fairchild Semiconductor Corporation MUR8100E, RURP8100 Rev. MUR8100E, RURP8100 Electrical Specifications SYMBOL 150oC 1000V 1000V, 150oC dIF/dt 200A/µs DEFINITIONS Instantaneous forward voltage 300µs, 2%). Instantaneous reverse current. Reverse recovery time dIF/dt 100A/µs (See Figure summation Time reach peak reverse current dIF/dt 100A/µs (See Figure Time from peak projected zero crossing based straight line from peak through (See Figure Reverse recovery charge. Junction Capacitance. Thermal resistance junction case. Pulse width. Duty cycle. dIF/dt 200A/µs dIF/dt 200A/µs dIF/dt 200A/µs 10V, 25oC, Unless Otherwise Specified. TEST CONDITION UNITS oC/W Typical Performance Curves REVERSE CURRENT (µA) 175oC FORWARD CURRENT 175oC 100oC 25oC 100oC 25oC 0.01 0.001 1000 FORWARD VOLTAGE REVERSE VOLTAGE FIGURE FORWARD CURRENT FORWARD VOLTAGE FIGURE REVERSE CURRENT REVERSE VOLTAGE ©2001 Fairchild Semiconductor Corporation MUR8100E, RURP8100 Rev. MUR8100E, RURP8100 Typical Performance Curves (Continued) 25oC, dIF/dt 200A/µs RECOVERY TIMES (ns) RECOVERY TIMES (ns) 100oC, dIF/dt 200A/µs FORWARD CURRENT FORWARD CURRENT FIGURE CURVES FORWARD CURRENT FIGURE CURVES FORWARD CURRENT IF(AV) AVERAGE FORWARD CURRENT 175oC, dIF/dt 200A/µs RECOVERY TIMES (ns) WAVE FORWARD CURRENT CASE TEMPERATURE (oC) FIGURE CURVES FORWARD CURRENT FIGURE CURRENT DERATING CURVE JUNCTION CAPACITANCE (pF) REVERSE VOLTAGE FIGURE JUNCTION CAPACITANCE REVERSE VOLTAGE ©2001 Fairchild Semiconductor Corporation MUR8100E, RURP8100 Rev. MUR8100E, RURP8100 Test Circuits Waveforms AMPLITUDE CONTROL dIF/dt CONTROL CURRENT SENSE IGBT 0.25 FIGURE TEST CIRCUIT 40mH EAVL 1/2LI2 [VR(AVL) /(VR(AVL) VDD)] IGBT (BVCES VR(AVL)) CURRENT SENSE FIGURE WAVEFORMS DEFINITIONS VAVL FIGURE AVALANCHE ENERGY TEST CIRCUIT FIGURE AVALANCHE CURRENT VOLTAGE WAVEFORMS ©2001 Fairchild Semiconductor Corporation MUR8100E, RURP8100 Rev. TRADEMARKS following registered unregistered trademarks Fairchild Semiconductor owns authorized intended exhaustive list such trademarks. Quiet SeriesDISCLAIMER FAST PACMANPOPPowerTrench QFETQSQT OptoelectronicsQuiet SeriesSILENT SWITCHER SMART STARTStar* PowerStealth SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 FAIRCHILD SEMICONDUCTOR RESERVES RIGHT MAKE CHANGES WITHOUT FURTHER NOTICE PRODUCTS HEREIN IMPROVE RELIABILITY, FUNCTION DESIGN. FAIRCHILD DOES ASSUME LIABILITY ARISING APPLICATION PRODUCT CIRCUIT DESCRIBED HEREIN; NEITHER DOES CONVEY LICENSE UNDER PATENT RIGHTS, RIGHTS OTHERS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS AUTHORIZED CRITICAL COMPONENTS LIFE SUPPORT DEVICES SYSTEMS WITHOUT EXPRESS WRITTEN APPROVAL FAIRCHILD SEMICONDUCTOR CORPORATION. used herein: Life support devices systems devices critical component component life support device system whose failure perform systems which, intended surgical implant into reasonably expected cause failure life body, support sustain life, whose support device system, affect safety failure perform when properly used accordance with instructions provided labeling, effectiveness. reasonably expected result significant injury user. PRODUCT STATUS DEFINITIONS Definition Terms Datasheet Identification Advance Information Product Status Formative Design Definition This datasheet contains design specifications product development. Specifications change manner without notice. This datasheet contains preliminary data, supplementary data will published later date. Fairchild Semiconductor reserves right make changes time without notice order improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves right make changes time without notice order improve design. Preliminary First Production Identification Needed Full Production Obsolete Production This datasheet contains specifications product that been discontinued Fairchild semiconductor. datasheet printed reference information only. Rev. Other recent searchesLM5010A - LM5010A LM5010A Datasheet HFCN-6010+ - HFCN-6010+ HFCN-6010+ Datasheet DIP2212 - DIP2212 DIP2212 Datasheet DAC2904 - DAC2904 DAC2904 Datasheet BFT51F - BFT51F BFT51F Datasheet ATV5000 - ATV5000 ATV5000 Datasheet
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