P-Channel 40-V (D-S), 175_C MOSFET PRODUCT SUMMARY FEATURES
|
|
|
Top Searches for this datasheet
SUD50P04-09L
P-Channel 40-V (D-S), 175_C MOSFET
PRODUCT SUMMARY
FEATURES
(A)d
rDS(on)
0.0094 0.0145
TrenchFETr Power MOSFET 175_C Junction Temperature
APPLICATIONS
Automotive 12-V Boardnet
TO-252
Drain Connected
View Ordering Information: SUD50P04-09L P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS 25_C UNLESS OTHERWISE NOTED)
Parameter
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current 175_C) Pulsed Drain Current Avalanche Current Repetitive Avalanche Energya Power Dissipation Operating Junction Storage Temperature Range 25_C 25_C 25_C 125_C
Symbol
Tstg
Limit
136c
Unit
THERMAL RESISTANCE RATINGS
Parameter
Junction-to-Ambientb Junction-to-Case Notes: Duty cycle When mounted square (FR-4 material). curve voltage derating. Package limited. Steady State RthJA RthJC
Symbol
Typical
0.82
Maximum
Unit
_C/W
Document Number: 72243 S-31261-Rev. 16-Jun-03
www.vishay.com
SUD50P04-09L
SPECIFICATIONS 25_C UNLESS OTHERWISE NOTED)
Parameter Static
Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage V(BR)DSS VGS(th) IGSS VGS, Zero Gate Voltage Drain Current IDSS 125_C 175_C On-State Drain Currenta ID(on) Drain-Source On-State Drain Source State Resistancea 125_C rDS( DS(on) 175_C Forward Transconductancea 0.0115 0.0075 0.0094 0.014 0.017 0.0145 "100
Symbol
Test Condition
Unit
Dynamicb
Input Capacitance Output Capacitance Reversen Transfer Capacitance Total Gate Chargec Gate-Source Chargec Gate-Drain Chargec Turn-On Delay Timec Rise Timec Ciss Coss Crss td(on) td(off) VGEN 4800 18.5
Turn-Off Delay Timec Fall Timec
Source-Drain Diode Ratings Characteristics 25_C)b
Continuous Current Pulsed Current Forward Voltagea Reverse Recovery Time di/dt A/ms
Notes: Pulse test; pulse width duty cycle Guaranteed design, subject production testing. Independent operating temperature.
www.vishay.com
Document Number: 72243 S-31261-Rev. 16-Jun-03
SUD50P04-09L
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
thru Drain Current Drain Current
Transfer Characteristics
125_C 25_C 55_C
Drain-to-Source Voltage
Gate-to-Source Voltage
Transconductance
55_C Transconductance 25_C 125_C DS(on)- On-Resistance 0.016 0.020
On-Resistance Drain Current
0.012
0.008
0.004
0.000
Gate-to-Source Voltage
Drain Current
Capacitance
8000 7000 Gate-to-Source Voltage 6000 5000 4000 3000 2000 1000 Crss Coss Ciss
Gate Charge
Capacitance (pF)
Drain-to-Source Voltage
Total Gate Charge (nC)
Document Number: 72243 S-31261-Rev. 16-Jun-03
www.vishay.com
SUD50P04-09L
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
On-Resistance Junction Temperature
Source Current
Source-Drain Diode Forward Voltage
DS(on) On-Resistance (Normalized)
150_C
25_C
Junction Temperature (_C)
Source-to-Drain Voltage
THERMAL RATINGS
Maximum Avalanche Drain Current Case Temperature
1000
Safe Operating Area
rDS(on) Limited Drain Current Drain Current
Limited
P(t) 0.0001
ID(on) Limited 25_C Single Pulse BVDSS Limited
P(t) 0.001 P(t) 0.01 P(t) P(t)
Case Temperature (_C) Duty Cycle Normalized Effective Transient Thermal Impedance
Drain-to-Source Voltage
Normalized Thermal Transient Impedance, Junction-to-Case
0.05
0.02 Single Pulse 0.01 Square Wave Pulse Duration (sec)
www.vishay.com
Document Number: 72243 S-31261-Rev. 16-Jun-03
Other recent searches
uPD789166 - uPD789166 uPD789166 Datasheet
SMFS6837 - SMFS6837 SMFS6837 Datasheet
Si3948DV - Si3948DV Si3948DV Datasheet
SCHS153C - SCHS153C SCHS153C Datasheet
QFP120 - QFP120 QFP120 Datasheet
MAAMSS0001 - MAAMSS0001 MAAMSS0001 Datasheet
AD1833 - AD1833 AD1833 Datasheet
Privacy Policy | Disclaimer
© 2012 Datasheet Archive
