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Current Gain Plastic Medium-Power Silicon Transistor designe
Top Searches for this datasheetCurrent Gain Plastic Medium-Power Silicon Transistor designed general-purpose amplifier switching circuits. Recommended Watt audio amplifiers utilizing complementary symmetry circuitry. ELECTRICAL CHARACTERISTICS 25°C unless otherwise noted) THERMAL CHARACTERISTICS MAXIMUM RATINGS Semiconductort CHARACTERISTICS CHARACTERISTICS April, 2001 Rev. Semiconductor Components Industries, LLC, 2001 Thermal Resistance, Junction Case Operating Storage Junction Temperature Range Total Power Dissipation 25_C Derate above 25_C Base Current Continuous Collector Current Continuous Peak Emitter-Base Voltage Collector-Base Voltage Collector-Emitter Voltage Current Gain Adc, Vdc) Emitter-Base Cutoff Current (VEB Vdc, Collector-Base Cutoff Current (VCB Vdc, Collector-Emitter Sustaining Voltage mAdc, (Min) Complementary MJE371 Characteristic Rating Characteristic Symbol Symbol Tstg VCEO +150 Value 3.12 0.32 VCEO(sus) Symbol ICBO IEBO Watts W/_C _C/W Unit Unit AMPERE POWER TRANSISTOR SILICON VOLTS WATTS MJE521 Publication Order Number: MJE521/D CASE 77-09 TO-225AA TYPE µAdc µAdc Unit MJE521 COLLECTOR CURRENT (AMP) 150°C SECOND BREAKDOWN LIMITED BONDING WIRE LIMITED THERMALLY LIMITED 25°C VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) data Figure based TJ(pk) 150_C; variable depending conditions. Second breakdown pulse limits valid duty cycles provided 150_C. high case temperatures, thermal limitations will reduce power that handled values less than limitations imposed second breakdown. There limitations power handling ability transistor: average junction temperature second breakdown. Safe operating area curves indicate limits transistor that must observed reliable operation; i.e., transistor must subjected greater dissipation than curves indicate. Figure Active-Region Safe Operating Area 1000 hFE, CURRENT GAIN 150°C 25°C -55°C VOLTAGE (VOLTS) VBE(sat) IC/IB VCE(sat) IC/IB 1000 2000 COLLECTOR CURRENT (mA) 25°C 1000 2000 COLLECTOR CURRENT (mA) Figure Current Gain Figure "On" Voltage r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED) 0.05 0.01 SINGLE PULSE JC(t) r(t) 5.0°C/W CURVES APPLY POWER PULSE TRAIN SHOWN READ TIME TJ(pk) P(pk) JC(t) P(pk) 0.07 0.05 0.03 0.02 DUTY CYCLE, t1/t2 0.01 0.01 0.02 0.03 0.05 TIME (ms) 1000 Figure Thermal Response http://onsemi.com MJE521 PACKAGE DIMENSIONS TO-225AA CASE 77-09 ISSUE NOTES: DIMENSIONING TOLERANCING ANSI Y14.5M, 1982. CONTROLLING DIMENSION: INCH. INCHES 0.425 0.435 0.295 0.305 0.095 0.105 0.020 0.026 0.115 0.130 0.094 0.050 0.095 0.015 0.025 0.575 0.655 0.148 0.158 0.045 0.065 0.025 0.035 0.145 0.155 0.040 -MILLIMETERS 10.80 11.04 7.50 7.74 2.42 2.66 0.51 0.66 2.93 3.30 2.39 1.27 2.41 0.39 0.63 14.61 16.63 3.76 4.01 1.15 1.65 0.64 0.88 3.69 3.93 1.02 0.25 (0.010) 0.25 (0.010) http://onsemi.com MJE521 Semiconductor trademarks Semiconductor Components Industries, (SCILLC). SCILLC reserves right make changes without further notice products herein. SCILLC makes warranty, representation guarantee regarding suitability products particular purpose, does SCILLC assume liability arising application product circuit, specifically disclaims liability, including without limitation special, consequential incidental damages. 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