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Current Gain Plastic Medium-Power Silicon Transistors design
Top Searches for this datasheetCurrent Gain Plastic Medium-Power Silicon Transistors designed general-purpose amplifier switching circuits. Recommended Watt audio amplifiers utilizing complementary symmetry circuitry. ELECTRICAL CHARACTERISTICS 25°C unless otherwise noted) THERMAL CHARACTERISTICS MAXIMUM RATINGS Semiconductort CHARACTERISTICS CHARACTERISTICS April, 2001 Rev. Semiconductor Components Industries, LLC, 2001 Thermal Resistance, Junction Case Operating Storage Junction Temperature Range Total Power Dissipation 25_C Derate above 25_C Base Current Continuous Collector Current Continuous Peak Emitter-Base Voltage Collector-Base Voltage Collector-Emitter Voltage Current Gain Adc, Vdc) Emitter-Base Cutoff Current (VEB Vdc, Collector-Base Cutoff Current (VCB Vdc, Collector-Emitter Sustaining Voltage mAdc, (Min) MJE371 Complementary MJE521 Characteristic Rating Characteristic Symbol Symbol Tstg VCEO +150 Value 3.12 VCEO(sus) Symbol ICBO IEBO Watts mW/_C _C/W Unit Unit AMPERE POWER TRANSISTOR SILICON VOLTS WATTS MJE371 Publication Order Number: MJE371/D CASE 77-09 TO-225AA TYPE µAdc µAdc Unit MJE371 COLLECTOR CURRENT (AMP) 150°C BONDING WIRE LIMIT SECOND BREAKDOWN LIMIT THERMAL LIMIT 25°C There limitations power handling ability transistor: average junction temperature second breakdown. Safe operating area curves indicate limits transistor that must observed reliable operation; i.e., transistor must subjected greater dissipation than curves indicate. data Figure based TJ(pk) 150_C; variable depending conditions. Second breakdown pulse limits valid duty cycles provided TJ(pk) 150_C. high case temperatures, thermal limitations will reduce power that handled values less then limitations imposed second breakdown. VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) Figure Active-Region Safe Operating Area hFE, CURRENT GAIN, NORMALIZED 150°C 25°C VOLTAGE (VOLTS) -55°C VCE(sat) IC/IB 0.02 0.03 0.05 COLLECTOR CURRENT (AMP) 0.005 0.01 0.02 0.03 0.05 COLLECTOR CURRENT (AMP) 25°C 0.01 VBE(sat) IC/IB VBE(on) Figure Current Gain Figure "On" Voltage r(t), EFFECTIVE TRANSIENT THERMAL RESISTANCE (NORMALIZED) 0.05 0.02 0.01 SINGLE PULSE 0.02 0.03 0.05 TIME PULSE WIDTH (ms) 1000 JC(t) r(t) 3.12°C/W CURVES APPLY POWER PULSE TRAIN SHOWN READ TIME TJ(pk) P(pk) JC(t) P(pk) 0.07 0.05 0.03 0.02 0.01 0.01 DUTY CYCLE, t1/t2 Figure Thermal Response http://onsemi.com MJE371 PACKAGE DIMENSIONS TO-225AA CASE 77-09 ISSUE NOTES: DIMENSIONING TOLERANCING ANSI Y14.5M, 1982. CONTROLLING DIMENSION: INCH. INCHES 0.425 0.435 0.295 0.305 0.095 0.105 0.020 0.026 0.115 0.130 0.094 0.050 0.095 0.015 0.025 0.575 0.655 0.148 0.158 0.045 0.065 0.025 0.035 0.145 0.155 0.040 -MILLIMETERS 10.80 11.04 7.50 7.74 2.42 2.66 0.51 0.66 2.93 3.30 2.39 1.27 2.41 0.39 0.63 14.61 16.63 3.76 4.01 1.15 1.65 0.64 0.88 3.69 3.93 1.02 0.25 (0.010) 0.25 (0.010) http://onsemi.com MJE371 Semiconductor trademarks Semiconductor Components Industries, (SCILLC). SCILLC reserves right make changes without further notice products herein. SCILLC makes warranty, representation guarantee regarding suitability products particular purpose, does SCILLC assume liability arising application product circuit, specifically disclaims liability, including without limitation special, consequential incidental damages. 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