PNP/NPN Epitaxial Planar Silicon Transistors 2SA1207/2SC2909

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PNP/NPN Epitaxial Planar Silicon Transistors 2SA1207/2SC2909

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Ordering number:EN778E
PNP/NPN Epitaxial Planar Silicon Transistors
2SA1207/2SC2909
High-Voltage Switching Predriver Applications
Features
Adoption FBET process. High breakdown voltage. Excellent linearity small Cob. Fast switching speed.
Package Dimensions
unit:mm 2003A
[2SA1207/2SC2909]
2SA1207
Specifications
Absolute Maximum Ratings 25°C
Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO Tstg Conditions
JEDEC:TO-92 EIAJ:SC-43 SANYO:NP
B:Base C:Collector E:Emitter
Ratings (-)180 (-)160 (-)5 (-)70 (-)140 +150
Unit
Electrical Characteristics 25°C
Parameter Collector Cutoff Current Emitter Cutoff Current Current Gain Gain-Bandwidth Product Output Capacitance Collector-to-Emitter Saturation Voltage Turn-ON Time Fall Time Storage Time Symbol ICBO IEBO VCE(sat) tstg VCB=(-)80V, IE=0 VEB=(-)4V, IC=0 VCE=(-)5V, IC=(-)10mA VCE=(-)10V, IC=(-)10mA VCB=(-)10V, f=1MHz IC=(-)30mA, IB=(-)3mA specified Test Circuit specified Test Circuit specified Test Circuit 100* (2.5)2.0 0.08 (-0.14) (-0.4) Conditions Ratings (-)0.1 (-)0.1 400* Unit
2SA1207/2SC2909 classified 10mA follows
Switching Time Test Circuit
IC=10IB1=-10IB2=10mA (For PNP, polarity reversed) Unit (resistance capacitance
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters
TOKYO OFFICE Tokyo Bldg., 1-10, Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
71598HA (KT)/4190MO/3187AT/2255MY, No.778-1/4
2SA1207/2SC2909
No.778-2/4
2SA1207/2SC2909
No.778-3/4
2SA1207/2SC2909
products described contained herein intended surgical implants, life-support systems, aerospace equipment, nuclear power control systems, vehicles, disaster/crime-prevention equipment like, failure which directly indirectly cause injury, death property loss. Anyone purchasing products described contained herein above-mentioned shall: Accept full responsibility indemnify defend SANYO ELECTRIC CO., LTD., affiliates, subsidiaries distributors their officers employees, jointly severally, against claims litigation damages, cost expenses associated with such use: impose responsibilty fault negligence which cited such claim litigation SANYO ELECTRIC CO., LTD., affiliates, subsidiaries distributors their officers employees jointly severally. Information (including circuit diagrams circuit parameters) herein example only; guaranteed volume production. SANYO believes information herein accurate reliable, guarantees made implied regarding infringements intellectual property rights other rights third parties. This catalog provides information July, 1998. Specifications information herein subject change without notice.
No.778-4/4

PNP/NPN Epitaxial Planar Silicon Transistors 2SA1207/2SC2909

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