5.5A, 200V, 0.400 Ohm, N-Channel Power MOSFET 2N6798 N-Channel en

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5.5A, 200V, 0.400 Ohm, N-Channel Power MOSFET 2N6798 N-Channel en

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2N6798
5.5A, 200V, 0.400 Ohm, N-Channel Power MOSFET
2N6798 N-Channel enhancement mode silicon gate power field effect transistor designed applications such switching regulators, switching converters, motor drivers, relay drivers, drivers high power bipolar switching transistors requiring high speed gate drive power. This type operated directly from integrated circuits. Formerly developmental type TA_.
Features
5.5A, 200V rDS(ON) 0.400 Power Dissipation Limited Nanosecond Switching Speeds Linear Transfer Characteristics High Input Impedance Majority Carrier Device Related Literature TB334 "Guidelines Soldering Surface Mount Components Boards"
Ordering Information
PART NUMBER 2N6798 PACKAGE TO-205AF BRAND 2N6798
Symbol
NOTE: When ordering, include entire part number.
Packaging
JEDEC TO-205AF
DRAIN (CASE)
SOURCE
GATE
©2001 Fairchild Semiconductor Corporation
2N6798 Rev.
2N6798
Absolute Maximum Ratings
25oC, Unless Otherwise Specified 2N6798 0.20 UNITS W/oC
Drain Source Voltage (Note Drain Gate Voltage (RGS 20k) (Note VDGR Continuous Drain Current 100oC Pulsed Drain Current (Note Gate Source Voltage Continuous Source Current Pulse Source Current. Maximum Power Dissipation (Figure Above 25oC, Derate Linearly (Figure Operating Storage Temperature TSTG Maximum Temperature Soldering Leads 0.063in (1.6mm) from Case 10s. Package Body 10s, Techbrief Tpkg
CAUTION: Stresses above those listed "Absolute Maximum Ratings" cause permanent damage device. This stress only rating operation device these other conditions above those indicated operational sections this specification implied.
NOTE: 25oC 125oC.
Electrical Specifications
PARAMETER
25oC, Unless Otherwise Specified SYMBOL BVDSS VGS(TH) IGSS IDSS VDS(ON) rDS(ON) CISS COSS CRSS td(ON) td(OFF) 160V, 155mA (Figures 4.5V, 5.5A (Figures 77V, 3.5A, (Figure MOSFET Switching Times Essentially Independent Operating Temperature. TEST CONDITIONS 0.25mA VDS, 0.5mA ±20V, 200V, 160V, 125oC 10V, 5.5A 10V, 3.5A, 25oC 10V, 3.5A, 125oC 25oC, 5.5A, 3.5A 25V, 1.0MHz (Figure Free Operation 0.25 ±100 1000 2.20 0.400 0.750 UNITS
oC/W oC/W
Drain Source Breakdown Voltage Gate Threshold Voltage Gate Source Leakage Zero Gate Voltage Drain Current
State Voltage (Note Resistance (Note
Diode Forward Voltage (Note Forward Transconductance (Note Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Safe Operating Area
Thermal Resistance Junction Case Thermal Resistance Junction Ambient
Source Drain Diode Specifications
PARAMETER Reverse Recovery Time Reverse Recovered Charge NOTES: Pulse test: pulse width 300µs, duty cycle Repetitive rating: pulse width limited maximum junction temperature. Transient Thermal impedence curve (Figure SYMBOL TEST CONDITIONS 150oC, 5.5A, dISD/dt 100A/µs 150oC, 5.5A, dISD/dt 100A/µs UNITS
©2001 Fairchild Semiconductor Corporation
2N6798 Rev.
2N6798 Typical Performance Curves
POWER DISSIPATION MULTIPLIER DRAIN CURRENT
Unless Otherwise Specified
CASE TEMPERATURE (oC)
CASE TEMPERATURE (oC)
FIGURE NORMALIZED POWER DISSIPATION CASE TEMPERATURE
FIGURE MAXIMUM CONTINUOUS DRAIN CURRENT CASE TEMPERATURE
ZJC, NORMALIZED THERMAL IMPEDANCE 0.05 0.02 0.01 SINGLE PULSE 0.01 10-5 10-4 10-3 10-2 10-1 NOTES: DUTY FACTOR: t1/t2 PEAK
RECTANGULAR PULSE DURATION
FIGURE NORMALIZED MAXIMUM TRANSIENT THERMAL IMPEDANCE
OPERATION THIS AREA LIMITED rDS(ON) DRAIN CURRENT DRAIN CURRENT
80µs PULSE TEST
10µs 100µs
25oC RATED 5k/W SINGLE PULSE 10ms 100ms
VDS, DRAIN SOURCE VOLTAGE
VDS, DRAIN SOURCE VOLTAGE
FIGURE FORWARD BIAS SAFE OPERATING AREA
FIGURE OUTPUT CHARACTERISTICS
©2001 Fairchild Semiconductor Corporation
2N6798 Rev.
2N6798 Typical Performance Curves
80µs PULSE TEST DRAIN CURRENT VDS, DRAIN SOURCE VOLTAGE VGS, GATE SOURCE VOLTAGE
Unless Otherwise Specified (Continued)
80µs PULSE TEST
DRAIN CURRENT
-55oC 25oC 125oC
FIGURE SATURATION CHARACTERISTICS
FIGURE TYPICAL TRANSFER CHARACTERISTICS
2.0µs PULSE TEST RDS(ON), DRAIN SOURCE RESISTANCE NORMALIZEDDRAIN SOURCE RESISTANCE
DRAIN CURRENT
JUNCTION TEMPERATURE (oC)
FIGURE DRAIN SOURCE RESISTANCE GATE VOLTAGE DRAIN CURRENT
FIGURE NORMALIZED DRAIN SOURCE RESISTANCE JUNCTION TEMPERATURE
1.25 IDR, REVERSE DRAIN CURRENT NORMALIZED DRAIN SOURCE BREAKDOWN VOLTAGE
1.15
1.05
150oC
0.95
25oC
0.85
0.75
JUNCTION TEMPERATURE (oC)
VSD, SOURCE DRAIN VOLTAGE
FIGURE NORMALIZED DRAIN SOURCE BREAKDOWN VOLTAGE JUNCTION TEMPERATURE
FIGURE SOURCE DRAIN DIODE VOLTAGE
©2001 Fairchild Semiconductor Corporation
2N6798 Rev.
2N6798 Typical Performance Curves
Unless Otherwise Specified (Continued)
80µs PULSE TEST gfs, TRANSCONDUCTANCE -55oC 25oC 125oC CAPACITANCE (pF)
2000 1MHz CISS CRSS COSS
1600
1200 CISS COSS CRSS
DRAIN CURRENT
VDS, DRAIN SOURCE VOLTAGE
FIGURE TRANSCONDUCTANCE DRAIN CURRENT
FIGURE CAPACITANCE DRAIN SOURCE VOLTAGE
VGS, GATE SOURCE VOLTAGE
100V
TOTAL GATE CHARGE (nC)
FIGURE GATE SOURCE VOLTAGE GATE CHARGE
©2001 Fairchild Semiconductor Corporation
2N6798 Rev.
2N6798 Test Circuits Waveforms
BVDSS VARY OBTAIN REQUIRED PEAK
0.01
FIGURE UNCLAMPED ENERGY TEST CIRCUIT
FIGURE UNCLAMPED ENERGY WAVEFORMS
td(ON)
tOFF td(OFF)
PULSE WIDTH
FIGURE SWITCHING TIME TEST CIRCUIT
FIGURE RESISTIVE SWITCHING WAVEFORMS
CURRENT REGULATOR
(ISOLATED SUPPLY) SAME TYPE Qg(TOT)
BATTERY
0.2µF
0.3µF
IG(REF) CURRENT SAMPLING RESISTOR
CURRENT SAMPLING RESISTOR IG(REF)
FIGURE GATE CHARGE TEST CIRCUIT
FIGURE GATE CHARGE WAVEFORMS
©2001 Fairchild Semiconductor Corporation
2N6798 Rev.
TRADEMARKS
following registered unregistered trademarks Fairchild Semiconductor owns authorized intended exhaustive list such trademarks.
Quiet SeriesDISCLAIMER
FAST
PACMANPOPPowerTrench QFETQSQT OptoelectronicsQuiet SeriesSILENT SWITCHER SMART STARTStar* PowerStealth
SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SyncFETTinyLogicUHCUltraFET VCX
FAIRCHILD SEMICONDUCTOR RESERVES RIGHT MAKE CHANGES WITHOUT FURTHER NOTICE PRODUCTS HEREIN IMPROVE RELIABILITY, FUNCTION DESIGN. FAIRCHILD DOES ASSUME LIABILITY ARISING APPLICATION PRODUCT CIRCUIT DESCRIBED HEREIN; NEITHER DOES CONVEY LICENSE UNDER PATENT RIGHTS, RIGHTS OTHERS.
LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS AUTHORIZED CRITICAL COMPONENTS LIFE SUPPORT DEVICES SYSTEMS WITHOUT EXPRESS WRITTEN APPROVAL FAIRCHILD SEMICONDUCTOR CORPORATION. used herein: Life support devices systems devices critical component component life support device system whose failure perform systems which, intended surgical implant into reasonably expected cause failure life body, support sustain life, whose support device system, affect safety failure perform when properly used accordance with instructions provided labeling, effectiveness. reasonably expected result significant injury user. PRODUCT STATUS DEFINITIONS Definition Terms Datasheet Identification Advance Information Product Status Formative Design Definition This datasheet contains design specifications product development. Specifications change manner without notice. This datasheet contains preliminary data, supplementary data will published later date. Fairchild Semiconductor reserves right make changes time without notice order improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves right make changes time without notice order improve design.
Preliminary
First Production
Identification Needed
Full Production
Obsolete
Production
This datasheet contains specifications product that been discontinued Fairchild semiconductor. datasheet printed reference information only.
Rev.

5.5A, 200V, 0.400 Ohm, N-Channel Power MOSFET 2N6798 N-Channel en

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