3.5A, 200V, 0.800 Ohm, N-Channel Power MOSFET 2N6790 N-Channel en

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3.5A, 200V, 0.800 Ohm, N-Channel Power MOSFET 2N6790 N-Channel en

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2N6790
3.5A, 200V, 0.800 Ohm, N-Channel Power MOSFET
2N6790 N-Channel enhancement mode silicon gate power field effect transistor designed applications such switching regulators, switching converters, motor drivers, relay drivers, drivers high power bipolar switching transistors requiring high speed gate drive power. This device operated directly from integrated circuit.
Features
3.5A, 200V rDS(ON) 0.800 Power Dissipation Limited Nanosecond Switching Speeds Linear Transfer Characteristics High Input Impedance Majority Carrier Device
Ordering Information
PART NUMBER 2N6790 PACKAGE TO-205AF BRAND 2N6790
Related Literature TB334 "Guidelines Soldering Surface Mount Components Boards"
NOTE: When ordering, include entire part number.
Symbol
Packaging
JEDEC TO-205AF
DRAIN (CASE)
SOURCE
GATE
©2001 Fairchild Semiconductor Corporation
2N6790 Rev.
2N6790
Absolute Maximum Ratings
25oC, Unless Otherwise Specified 2N6790 2.25 0.16 UNITS W/oC
Drain Source Voltage Drain Gate Voltage (RGS 20k) .VDGR Continuous Drain Current 100oC Pulsed Drain Current Gate Source Voltage Continuous Source Current (Body Diode) Pulse Source Current (Body Diode). Maximum Power Dissipation Above 25oC, Derate Linearly Operating Storage Temperature TSTG Maximum Temperature Soldering Leads 0.063in (1.6mm) from Case 10s. Package Body 10s, Techbrief .Tpkg
CAUTION: Stresses above those listed "Absolute Maximum Ratings" cause permanent damage device. This stress only rating operation device these other conditions above those indicated operational sections this specification implied.
NOTE: 25oC 125oC.
Electrical Specifications
PARAMETER
25oC, Unless Otherwise Specified SYMBOL BVDSS VGS(TH) IDSS IGSS VDS(ON) rDS(ON) CISS COSS CRSS td(ON) td(OFF) 160V, 125mA 5.7V, 3.5A 2.25A 74V, TEST CONDITIONS 0.25mA, VDS, 1.0mA 200V, 160V, 125oC ±20V, 3.5A, 2.25A, 2.25A, 125oC 3.5A, 2.25A, 1MHz Free Operation 2.25 1000 0.800 6.25 UNITS
oC/W oC/W
Drain Source Breakdown Voltage Gate Threshold Voltage Zero-Gate Voltage Drain Current
Gate Source Leakage Current Drain Source On-Voltage (Note Drain Source Resistance
Diode Forward Voltage Forward Transconductance (Note Input Capacitance Output Capacitance Reverse-Transfer Capacitance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Safe Operating Area
Thermal Resistance Junction Case Thermal Resistance Junction Ambient
Source Drain Diode Specifications
PARAMETER Reverse Recovery Time Reverse Recovered Charge NOTES: Pulse test: pulse width 300µs, duty cycle Repetitive rating: pulse width limited maximum junction temperature. Transient Thermal Impedance curve (Figure SYMBOL TEST CONDITIONS 150oC, 3.5A, dlSD/dt 100A/µs 150oC, 3.5A, dlSD/dt 100A/µs UNITS
©2001 Fairchild Semiconductor Corporation
2N6790 Rev.
2N6790 Typical Performance Curves
POWER DISSIPATION MULTIPLIER DRAIN CURRENT
Unless Otherwise Specified
CASE TEMPERATURE (oC)
CASE TEMPERATURE (oC)
FIGURE NORMALIZED POWER DISSIPATION CASE TEMPERATURE
FIGURE MAXIMUM CONTINUOUS DRAIN CURRENT CASE TEMPERATURE
ZJC, NORMALIZED THERMAL IMPEDANCE 0.05 0.02 0.01 0.01 10-5 SINGLE PULSE 10-4
NOTES: DUTY FACTOR: t1/t2 PEAK 10-2 10-3 RECTANGULAR PULSE DURATION
FIGURE MAXIMUM TRANSIENT THERMAL IMPEDANCE
OPERATION THIS AREA LIMITED rDS(ON) DRAIN CURRENT 10µs 100µs 1.0ms 10ms 25oC RATED SINGLE PULSE 0.05 VDS, DRAIN SOURCE 100ms 1000 DRAIN CURRENT
80µs PULSE TEST
VDS, DRAIN SOURCE VOLTAGE
FIGURE FORWARD BIAS SAFE OPERATING AREAS
FIGURE OUTPUT CHARACTERISTICS
©2001 Fairchild Semiconductor Corporation
2N6790 Rev.
2N6790 Typical Performance Curves
ID(ON), ON-STATE DRAIN CURRENT 80µs PULSE TEST
Unless Otherwise Specified (Continued)
ID(ON) rDS(ON) 80µs PULSE TEST -55oC
25oC
DRAIN CURRENT
125oC
VDS, DRAIN SOURCE VOLTAGE
VGS, GATE SOURCE VOLTAGE
FIGURE SATURATION CHARACTERISTICS
FIGURE TRANSFER CHARACTERISTICS
rDS(ON), DRAIN SOURCE RESISTANCE
NORMALIZED RESISTANCE
PULSE DURATION 2.0µs INITIAL 25oC
DRAIN CURRENT
JUNCTION TEMPERATURE (oC)
FIGURE DRAIN SOURCE RESISTANCE GATE VOLTAGE DRAIN CURRENT
FIGURE NORMALIZED DRAIN SOURCE RESISTANCE JUNCTION TEMPERATURE
1.25 NORMALIZED DRAIN SOURCE BREAKDOWN VOLTAGE
1000 1MHz CISS CRSS COSS
1.15 CAPACITANCE (pF)
1.05
CISS
0.95
0.85
COSS CRSS VDS, DRAIN SOURCE VOLTAGE
0.75
JUNCTION TEMPERATURE (oC)
FIGURE NORMALIZED DRAIN SOURCE BREAKDOWN VOLTAGE JUNCTION TEMPERATURE
FIGURE CAPACITANCE DRAIN SOURCE VOLTAGE
©2001 Fairchild Semiconductor Corporation
2N6790 Rev.
2N6790 Typical Performance Curves
80µs PULSE TEST gfs, TRANSCONDUCTANCE 4.25 3.75 2.25 1.50 0.75 DRAIN CURRENT 25oC 125oC
Unless Otherwise Specified (Continued)
IDR, REVERSE DRAIN CURRENT
-55oC
25oC 150oC
150oC 25oC VSD, SOURCE DRAIN VOLTAGE
FIGURE TRANSCONDUCTANCE DRAIN CURRENT
FIGURE SOURCE DRAIN DIODE VOLTAGE
VGS, GATE SOURCE VOLTAGE 160V 100V
TOTAL GATE CHARGE (nC)
FIGURE GATE SOURCE VOLTAGE GATE CHARGE
©2001 Fairchild Semiconductor Corporation
2N6790 Rev.
2N6790 Test Circuits Waveforms
BVDSS VARY OBTAIN REQUIRED PEAK
0.01
FIGURE UNCLAMPED ENERGY TEST CIRCUIT
FIGURE UNCLAMPED ENERGY WAVEFORMS
td(ON)
tOFF td(OFF)
PULSE WIDTH
FIGURE SWITCHING TIME TEST CIRCUIT
FIGURE RESISTIVE SWITCHING WAVEFORMS
CURRENT REGULATOR
(ISOLATED SUPPLY) SAME TYPE Qg(TOT)
BATTERY
0.2µF
0.3µF
IG(REF) CURRENT SAMPLING RESISTOR
CURRENT SAMPLING RESISTOR IG(REF)
FIGURE GATE CHARGE TEST CIRCUIT
FIGURE GATE CHARGE WAVEFORMS
©2001 Fairchild Semiconductor Corporation
2N6790 Rev.
TRADEMARKS
following registered unregistered trademarks Fairchild Semiconductor owns authorized intended exhaustive list such trademarks.
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PACMANPOPPowerTrench QFETQSQT OptoelectronicsQuiet SeriesSILENT SWITCHER SMART STARTStar* PowerStealth
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FAIRCHILD SEMICONDUCTOR RESERVES RIGHT MAKE CHANGES WITHOUT FURTHER NOTICE PRODUCTS HEREIN IMPROVE RELIABILITY, FUNCTION DESIGN. FAIRCHILD DOES ASSUME LIABILITY ARISING APPLICATION PRODUCT CIRCUIT DESCRIBED HEREIN; NEITHER DOES CONVEY LICENSE UNDER PATENT RIGHTS, RIGHTS OTHERS.
LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS AUTHORIZED CRITICAL COMPONENTS LIFE SUPPORT DEVICES SYSTEMS WITHOUT EXPRESS WRITTEN APPROVAL FAIRCHILD SEMICONDUCTOR CORPORATION. used herein: Life support devices systems devices critical component component life support device system whose failure perform systems which, intended surgical implant into reasonably expected cause failure life body, support sustain life, whose support device system, affect safety failure perform when properly used accordance with instructions provided labeling, effectiveness. reasonably expected result significant injury user. PRODUCT STATUS DEFINITIONS Definition Terms Datasheet Identification Advance Information Product Status Formative Design Definition This datasheet contains design specifications product development. Specifications change manner without notice. This datasheet contains preliminary data, supplementary data will published later date. Fairchild Semiconductor reserves right make changes time without notice order improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves right make changes time without notice order improve design.
Preliminary
First Production
Identification Needed
Full Production
Obsolete
Production
This datasheet contains specifications product that been discontinued Fairchild semiconductor. datasheet printed reference information only.
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3.5A, 200V, 0.800 Ohm, N-Channel Power MOSFET 2N6790 N-Channel en

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