HIGH DENSITY MOUNTING PHOTOTRANSISTOR OPTICALLY COUPLED ISOLATORS
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TLP521GB, TLP521-2GB, TLP521-4GB, TLP521, TLP521-2, TLP521-4 TLP521XGB, TLP521-2XGB, TLP521-4XGB TLP521X, TLP521-2X, TLP521-4X
HIGH DENSITY MOUNTING PHOTOTRANSISTOR OPTICALLY COUPLED ISOLATORS
APPROVALS recognised, File E91231 SPECIFICATION APPROVALS 0884 available lead form form approved CECC 00802
TLP521
2.54 5.08 4.08
Dimensions
7.62 0.26
approved Certificate 8001
DESCRIPTION TLP521, TLP521-2, TLP521-4 series optically coupled isolators consist infrared light emitting diodes silicon photo transistors space efficient dual line plastic packages. FEATURES Options :10mm lead spread after part Surface mount after part Tape&reel SMT&R after part High Current Transfer Ratio min) High Isolation Voltage (5.3kVRMS ,7.5kVPK High BVCEO 55Vmin electrical parameters 100% tested Custom electrical selections available APPLICATIONS Computer terminals Industrial systems controllers Measuring instruments Signal transmission between systems different potentials impedances
OPTION
SURFACE MOUNT OPTION
TLP521-2
2.54
3.35
7.62
10.16 9.16
3.35
0.26 7.62 0.26
TLP521-4
2.54
7.62
20.32 19.32 3.35
10.46 9.86
1.25 0.75
0.26 10.16
ISOCOM COMPONENTS Unit 25B, Park View Road West, Park View Industrial Estate, Brenda Road Hartlepool, Cleveland, TS25 Tel: (01429) 863609 :(01429) 863581
7/4/03
ISOCOM 1024 Greenville Ave, Suite 240, Allen, 75002 Tel: (214) 495-0755 Fax: (214) 495-0901 e-mail info@isocom.com http://www.isocom.com
DB92546m-AAS/A3
ABSOLUTE MAXIMUM RATINGS (25°C unless otherwise specified) Storage Temperature -55°C 125°C Operating Temperature -30°C 100°C Lead Soldering Temperature (1/16 inch (1.6mm) from case secs) 260°C INPUT DIODE Forward Current Reverse Voltage Power Dissipation 50mA 70mW
OUTPUT TRANSISTOR Collector-emitter Voltage BVCEO Emitter-collector Voltage BVECO Power Dissipation POWER DISSIPATION Total Power Dissipation
(derate linearly 2.67mW/°C above 25°C)
150mW
200mW
ELECTRICAL CHARACTERISTICS 25°C Unless otherwise noted PARAMETER Input Forward Voltage (VF) Reverse Current (IR) Output Collector-emitter Breakdown (BVCEO) Note Emitter-collector Breakdown (BVECO) Collector-emitter Dark Current (ICEO) Current Transfer Ratio (CTR) (Note TLP521, TLP521-2, TLP521-4 selection available Collector-emitter Saturation VoltageVCE (SAT) Input Output Isolation Voltage VISO Input-output Isolation Resistance RISO Response Time (Rise), Response Time (Fall), 5300 7500 5x1010 UNITS 1.15
TEST CONDITION 10mA 0.5mA 100µA 0.4V 2.4mA 0.2mA note note 500V (note 2mA,
Coupled
VRMS
Note Note
Measured with input leads shorted together output leads shorted together. Special Selections available request. Please consult factory.
7/4/03
DB92546m-AAS/A3
Collector Power Dissipation Ambient Temperature Collector power dissipation (mW) Collector current (mA)
Collector Current Collector-emitter Voltage 25°C
Ambient temperature Forward Current Ambient Temperature
Collector-emitter voltage Collector Current Collector-emitter Voltage Collector current (mA) 25°C
Forward current (mA) Ambient temperature Collector-emitter Saturation Voltage Ambient Temperature 0.28 Current transfer ratio 0.24 0.20 0.16 0.12 0.08 0.04 Ambient temperature
7/4/03
Collector-emitter voltage Current Transfer Ratio Forward Current Forward current (mA)
DB92546m-AAS/A3
Collector-emitter saturation voltage VCE(SAT)
25°C
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