SILICON POWER TRANSISTOR 2N6166 Designed operate collector modula
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2N6166
SILICON POWER TRANSISTOR
2N6166 Designed operate collector modulated Power Amplifier Applications MHz.
PACKAGE STYLE .500
.112x45° FULL
NOM.
FEATURES:
min. W/150 min. W/150 OmnigoldMetalization System
MAXIMUM RATINGS
VCBO VEBO PDISS TSTG +200 +150 °C/W
MINIMUM
inches
MAXIMUM
inches
.220 5.59 .125 3.18 .245 6.22 .720 18.28 .125 3.18 .970 24.64 .495 12.57 .003 0.08 .090 2.29 .150 3.81 .980 24.89
.230 5.84 .255 6.48 .7.30 18.54 .980 24.89 .505 12.83 .007 0.18 .110 2.79 .175 4.45 .280 7.11 1.050 26.67
ORDER CODE: ASI10790
CHARACTERISTICS
SYMBOL
BVCES BVCEO BVEBO ICES ICBO
NONETEST CONDITIONS
POUT
MINIMUM TYPICAL MAXIMUM
UNITS
7525 ETHEL AVENUE NORTH HOLLYWOOD, 91605 (818) 982-1200 (818) 765-3004
Specifications subject change without notice.
REV.
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