LIMIN MITSUBISHI HVIGBT MODULES CM600E2Y-34H HIGH POWER

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LIMIN MITSUBISHI HVIGBT MODULES CM600E2Y-34H HIGH POWER

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LIMIN
MITSUBISHI HVIGBT MODULES
CM600E2Y-34H
HIGH POWER SWITCHING INSULATED TYPE
HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
CM600E2Y-34H
600A VCES 1700V Insulated Type 1-elements pack (for brake)
APPLICATION choppers, Dynamic braking choppers.
OUTLINE DRAWING CIRCUIT DIAGRAM
Dimensions
57±0.25 57±0.25 NUTS
124±0.25
CIRCUIT DIAGRAM
NUTS 55.2 11.85
MOUNTING HOLES
11.5
31.5
LABEL
HVIGBT MODULES (High Voltage Insulated Gate Bipolar Transistor Modules)
Mar. 2001
LIMIN
MITSUBISHI HVIGBT MODULES
CM600E2Y-34H
HIGH POWER SWITCHING INSULATED TYPE
HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
MAXIMUM RATINGS
Symbol VCES VGES (Note (Note (Note Tstg Viso Item Collector-emitter voltage Gate-emitter voltage Collector current Emitter current Maximum collector dissipation Junction temperature Storage temperature Isolation voltage Mounting torque Mass 25°C Pulse 25°C Pulse 25°C, IGBT part Conditions Ratings 1700 1200 1200 6200 +150 +125 4000 6.67 13.00 2.84 6.00 0.88 2.00 Unit
(Note (Note
Charged part base plate, rms, sinusoidal, 60Hz 1min. Main terminals screw Mounting screw Auxiliary terminals screw Typical value
ELECTRICAL CHARACTERISTICS
Symbol ICES VGE(th) IGES VCE(sat) Cies Coes Cres (on) (off) (Note (Note (Note Rth(j-c)Q Rth(j-c)R Rth(c-f) Rth(j-c) Rth(c-f)
Note
Item Collector cutoff current Gate-emitter threshold voltage Gate-leakage current Collector-emitter saturation voltage Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Turn-on delay time Turn-on rise time Turn-off delay time Turn-off fall time Emitter-collector voltage Reverse recovery time Reverse recovery charge Thermal resistance Contact thermal resistance Forward voltage Reverse recovery time Reverse recovery charge Thermal resistance Contact thermal resistance
Conditions CES, 60mA, VGES 25°C 600A, 125°C 850V, 600A, 850V, 600A VGE1 VGE2 Resistive load switching operation 600A, 600A -1200A Junction case, IGBT part Junction case, FWDi part Case fin, conductive grease applied (Per module) 600A, Clamp diode part 600A -1200A Clamp diode part Junction case, Clamp diode part Case fin, conductive grease applied (Per module)
Limits 2.75 3.30 10.0 2.40 0.016 2.50 0.016
3.58 1.20 1.50 2.00 0.60 3.12 2.00 0.020 0.064 3.25 2.00 0.064
Unit
(Note
Pulse width repetition rate should such that device junction temp. does exceed Tjmax rating. VEC, die/dt represent characteristics anti-parallel, emitter collector free-wheel diode. Junction temperature should increase beyond 150°C. Pulse width repetition rate should such cause negligible temperature rise.
HVIGBT MODULES (High Voltage Insulated Gate Bipolar Transistor Modules)
Mar. 2001
LIMIN
MITSUBISHI HVIGBT MODULES
CM600E2Y-34H
HIGH POWER SWITCHING INSULATED TYPE
HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
PERFORMANCE CURVES
OUTPUT CHARACTERISTICS (TYPICAL) 1200 25°C 1000 1200 TRANSFER CHARACTERISTICS (TYPICAL)
COLLECTOR CURRENT
COLLECTOR CURRENT
1000 25°C 125°C
COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat)
GATE-EMITTER VOLTAGE
COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL)
COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL)
COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat)
COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat)
25°C 1200A
600A
25°C 125°C 1000 1200
240A
COLLECTOR CURRENT
GATE-EMITTER VOLTAGE
FREE-WHEEL DIODE FORWARD CHARACTERISTICS (TYPICAL)
CAPACITANCE (TYPICAL)
CAPACITANCE Cies, Coes, Cres (nF)
EMITTER CURRENT
25°C
25°C Cies, Coes 100kHz Cres 1MHz Cies
Coes Cres
10-1 COLLECTOR-EMITTER VOLTAGE
EMITTER-COLLECTOR VOLTAGE
Mar. 2001
LIMIN
MITSUBISHI HVIGBT MODULES
CM600E2Y-34H
HIGH POWER SWITCHING INSULATED TYPE
HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL)
REVERSE RECOVERY TIME (µs)
SWITCHING TIMES (µs)
850V, ±15V 3.3, 125°C Inductive load 10-1 td(off) td(on)
10-1
COLLECTOR CURRENT
EMITTER CURRENT
TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (IGBT part)
NORMALIZED TRANSIENT THERMAL IMPEDANCE Zth(j NORMALIZED TRANSIENT THERMAL IMPEDANCE Zth(j
TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (FWDi part) 10-1 10-2 10-3 10-2 10-1 TIME Single Pulse 25°C Rth(j 0.080K/W (Per module)
10-1
Single Pulse 25°C Rth(j 0.032K/W (Per module)
10-2 10-3 10-2 10-1 TIME
GATE CHARGE (TYPICAL)
GATE-EMITTER VOLTAGE
850V 600A
1000
2000
3000
4000
5000
GATE CHARGE (nC)
Mar. 2001
REVERSE RECOVERY CURRENT
REVERSE RECOVERY CHARACTERISTICS FREE-WHEEL DIODE (TYPICAL) 850V, 25°C Inductive load ±15V,

LIMIN MITSUBISHI HVIGBT MODULES CM600E2Y-34H HIGH POWER

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