LIMIN MITSUBISHI HVIGBT MODULES CM400DY-66H HIGH POWER

The Datasheet Archive - 100 Million Datasheets from 7500 Manufacturers.

LIMIN MITSUBISHI HVIGBT MODULES CM400DY-66H HIGH POWER

Datasheet Thumbnail

Top Searches for this datasheet

LIMIN
MITSUBISHI HVIGBT MODULES
CM400DY-66H
HIGH POWER SWITCHING INSULATED TYPE
HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
CM400DY-66H
400A VCES 3300V Insulated Type 2-elements pack
APPLICATION Inverters, Converters, choppers, Induction heating, converters.
OUTLINE DRAWING CIRCUIT DIAGRAM
Dimensions
57±0.25 57±0.25
NUTS
124±0.25
CIRCUIT DIAGRAM
E2(C1)
MOUNTING HOLES 24.5 53.6 61.5
NUTS 36.3 48.8
39.5
HVIGBT MODULES (High Voltage Insulated Gate Bipolar Transistor Modules)
LABEL
Mar. 2001
LIMIN
MITSUBISHI HVIGBT MODULES
CM400DY-66H
HIGH POWER SWITCHING INSULATED TYPE
HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
MAXIMUM RATINGS 25°C)
Symbol VCES VGES (Note (Note (Note Tstg Viso Item Collector-emitter voltage Gate-emitter voltage Collector current Emitter current Maximum collector dissipation Junction temperature Storage temperature Isolation voltage Mounting torque Mass 25°C Pulse 25°C Pulse 25°C, IGBT part Conditions Ratings 3300 3400 +150 +125 6000 6.67 13.00 2.84 6.00 0.88 2.00 Unit
(Note (Note
Charged part base plate, rms, sinusoidal, 60Hz 1min. Main terminals screw Mounting screw Auxiliary terminals screw Typical value
ELECTRICAL CHARACTERISTICS 25°C)
Symbol ICES VGE(th) IGES VCE(sat) Cies Coes Cres (on) (off) (Note (Note (Note Rth(j-c)Q Rth(j-c)R Rth(c-f)
Note
Item Collector cutoff current Gate-emitter threshold voltage Gate-leakage current Collector-emitter saturation voltage Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Turn-on delay time Turn-on rise time Turn-off delay time Turn-off fall time Emitter-collector voltage Reverse recovery time Reverse recovery charge Thermal resistance Contact thermal resistance
Conditions CES, 40mA, VGES 25°C 400A, 125°C 1650V, 400A, 1650V, 400A VGE1 VGE2 Resistive load switching operation 400A, 400A -800A Junction case, IGBT part (Per module) Junction case, FWDi part (Per module) Case fin, conductive grease applied (Per module)
Limits 4.40 4.80 3.30 0.016 5.72 1.00 2.00 2.00 1.00 4.29 1.20 0.036 0.072
Unit
(Note
Pulse width repetition rate should such that device junction temp. does exceed Tjmax rating. VEC, die/dt represent characteristics anti-parallel, emitter collector free-wheel diode. Junction temperature should increase beyond 150°C. Pulse width repetition rate should such cause negligible temperature rise.
HVIGBT MODULES (High Voltage Insulated Gate Bipolar Transistor Modules)
Mar. 2001
LIMIN
MITSUBISHI HVIGBT MODULES
CM400DY-66H
HIGH POWER SWITCHING INSULATED TYPE
HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
PERFORMANCE CURVES
OUTPUT CHARACTERISTICS (TYPICAL) Tj=25°C VGE=11V VGE=12V TRANSFER CHARACTERISTICS (TYPICAL) VCE=10V
COLLECTOR CURRENT
VGE=13V VGE=14V VGE=15V
COLLECTOR CURRENT
VGE=20V
VGE=10V
VGE=9V VGE=8V VGE=7V
25°C 125°C
COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat)
GATE-EMITTER VOLTAGE
COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL)
COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL)
COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat)
VGE=15V
COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat)
25°C 800A 400A
160A
25°C 125°C
COLLECTOR CURRENT
GATE-EMITTER VOLTAGE
FREE-WHEEL DIODE FORWARD CHARACTERISTICS (TYPICAL)
CAPACITANCE (TYPICAL)
CAPACITANCE Cies, Coes, Cres (nF)
EMITTER CURRENT
Tj=25°C
Cies
Coes
Cres 25°C Cies, Coes 100kHz 1MHz Cres 10-1 COLLECTOR-EMITTER VOLTAGE
EMITTER-COLLECTOR VOLTAGE
Mar. 2001
LIMIN
MITSUBISHI HVIGBT MODULES
CM400DY-66H
HIGH POWER SWITCHING INSULATED TYPE
HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL)
REVERSE RECOVERY TIME (µs)
REVERSE RECOVERY CHARACTERISTICS FREE-WHEEL DIODE (TYPICAL)
REVERSE RECOVERY CURRENT
SWITCHING TIMES (µs)
1650V, ±15V 7.5, 125°C Inductive load 10-1 td(off) td(on)
10-1
1650V, 125°C Inductive load ±15V,
COLLECTOR CURRENT
EMITTER CURRENT
TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (IGBT part)
NORMALIZED TRANSIENT THERMAL IMPEDANCE Zth(j NORMALIZED TRANSIENT THERMAL IMPEDANCE Zth(j
TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (FWDi part) 10-1 10-2 10-3 10-2 10-1 TIME Single Pulse 25°C Rth(j 0.072K/W (Per module)
10-1
Single Pulse 25°C Rth(j 0.036K/W (Per module)
10-2 10-3 10-2 10-1 TIME
GATE CHARGE (TYPICAL)
GATE-EMITTER VOLTAGE
1650V 400A
1000
2000
3000
4000
GATE CHARGE (nC)
Mar. 2001

LIMIN MITSUBISHI HVIGBT MODULES CM400DY-66H HIGH POWER

Top Searches for this datasheet

Other recent searches