LIMIN MITSUBISHI HVIGBT MODULES CM1200HA-66H HIGH POWER

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LIMIN MITSUBISHI HVIGBT MODULES CM1200HA-66H HIGH POWER

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LIMIN
MITSUBISHI HVIGBT MODULES
CM1200HA-66H
HIGH POWER SWITCHING INSULATED TYPE
HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
CM1200HA-66H
1200A VCES 3300V Insulated Type 1-element pack
APPLICATION Inverters, Converters, choppers, Induction heating, converters.
OUTLINE DRAWING CIRCUIT DIAGRAM
Dimensions
57±0.25
57±0.25
57±0.25
NUTS
124±0.25
CIRCUIT DIAGRAM
20.25 41.25 NUTS 79.4 7MOUNTING HOLES
61.5
61.5
HVIGBT MODULES (High Voltage Insulated Gate Bipolar Transistor Modules)
LABEL
Mar. 2001
LIMIN
MITSUBISHI HVIGBT MODULES
CM1200HA-66H
HIGH POWER SWITCHING INSULATED TYPE
HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
MAXIMUM RATINGS 25°C)
Symbol VCES VGES (Note (Note (Note Tstg Viso Item Collector-emitter voltage Gate-emitter voltage Collector current Emitter current Maximum collector dissipation Junction temperature Storage temperature Isolation voltage Mounting torque Mass Conditions 25°C Pulse 25°C Pulse 25°C, IGBT part Ratings 3300 1200 2400 1200 2400 10400 +150 +125 6000 6.67 13.00 2.84 6.00 0.88 2.00 Unit
(Note (Note
Charged part base plate, rms, sinusoidal, 60Hz 1min. Main terminals screw Mounting screw Auxiliary terminals screw Typical value
ELECTRICAL CHARACTERISTICS
Symbol ICES VGE(th) IGES VCE(sat) Cies Coes Cres (on) (off) (Note (Note (Note Rth(j-c)Q Rth(j-c)R Rth(c-f)
Note
25°C)
Item Collector cutoff current Gate-emitter threshold voltage Gate-leakage current Collector-emitter saturation voltage Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Turn-on delay time Turn-on rise time Turn-off delay time Turn-off fall time Emitter-collector voltage Reverse recovery time Reverse recovery charge Thermal resistance Contact thermal resistance
Conditions CES, 120mA, VGES 25°C 1200A, 125°C 1650V, 1200A, 1650V, 1200A VGE1 VGE2 Resistive load switching operation 1200A, 1200A -2400A Junction case, IGBT part Junction case, FWDi part Case fin, conductive grease applied
Limits 4.40 4.80 12.0 3.30 0.006
5.72 1.60 2.00 2.50 1.00 4.29 1.20 0.012 0.024
Unit
(Note
Pulse width repetition rate should such that device junction temp. does exceed Tjmax rating. VEC, die/dt represent characteristics anti-parallel, emitter collector free-wheel diode. Junction temperature should increase beyond 150°C. Pulse width repetition rate should such cause negligible temperature rise.
HVIGBT MODULES (High Voltage Insulated Gate Bipolar Transistor Modules)
Mar. 2001
LIMIN
MITSUBISHI HVIGBT MODULES
CM1200HA-66H
HIGH POWER SWITCHING INSULATED TYPE
HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
PERFORMANCE CURVES
OUTPUT CHARACTERISTICS (TYPICAL) 2400 Tj=25°C 2400 VCE=10V VGE=12V VGE=11V TRANSFER CHARACTERISTICS (TYPICAL)
COLLECTOR CURRENT
2000 1600 1200
COLLECTOR CURRENT
VGE=13V VGE=14V VGE=15V VGE=20V
2000 1600 1200
VGE=10V
VGE=9V VGE=8V VGE=7V
25°C 125°C
COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat)
GATE-EMITTER VOLTAGE
COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL)
COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL)
COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat)
COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat)
VGE=15V
25°C 2400A 1200A
480A
25°C 125°C 1200 1600 2000 2400
COLLECTOR CURRENT
GATE-EMITTER VOLTAGE
FREE-WHEEL DIODE FORWARD CHARACTERISTICS (TYPICAL)
CAPACITANCE (TYPICAL)
CAPACITANCE Cies, Coes, Cres (nF)
EMITTER CURRENT
Tj=25°C
25°C Cies, Coes 100kHz 1MHz Cres Cies
Coes
Cres
10-1 COLLECTOR-EMITTER VOLTAGE
EMITTER-COLLECTOR VOLTAGE
Mar. 2001
LIMIN
MITSUBISHI HVIGBT MODULES
CM1200HA-66H
HIGH POWER SWITCHING INSULATED TYPE
HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) td(off) 10-1 td(on) 1650V, ±15V 2.5, 125°C Inductive load
REVERSE RECOVERY TIME (µs)
10-1
COLLECTOR CURRENT
EMITTER CURRENT
TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (IGBT part)
NORMALIZED TRANSIENT THERMAL IMPEDANCE Zth(j NORMALIZED TRANSIENT THERMAL IMPEDANCE Zth(j
TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (FWDi part) Single Pulse 25°C Rth(j 0.024K/W 10-1 10-2 10-3 10-2 10-1 TIME
Single Pulse 25°C Rth(j 0.012K/W 10-1 10-2 10-3 10-2 10-1 TIME
GATE CHARGE (TYPICAL)
GATE-EMITTER VOLTAGE
1650V 1200A
2000
4000
6000
8000
10000
GATE CHARGE (nC)
Mar. 2001
REVERSE RECOVERY CURRENT
SWITCHING TIMES (µs)
REVERSE RECOVERY CHARACTERISTICS FREE-WHEEL DIODE (TYPICAL) 1650V, 125°C Inductive load ±15V,

LIMIN MITSUBISHI HVIGBT MODULES CM1200HA-66H HIGH POWER

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