LIMIN MITSUBISHI HVIGBT MODULES CM800HA-66H HIGH POWER

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LIMIN MITSUBISHI HVIGBT MODULES CM800HA-66H HIGH POWER

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LIMIN
MITSUBISHI HVIGBT MODULES
CM800HA-66H
HIGH POWER SWITCHING INSULATED TYPE
HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
CM800HA-66H
800A VCES 3300V Insulated Type 1-element pack
APPLICATION Inverters, Converters, choppers, Induction heating, converters.
OUTLINE DRAWING CIRCUIT DIAGRAM
Dimensions
57±0.25 57±0.25 NUTS
124±0.25
CIRCUIT DIAGRAM
NUTS
10.35 10.65 48.8 61.5
MOUNTING HOLES
LABEL
HVIGBT MODULES (High Voltage Insulated Gate Bipolar Transistor Modules)
Mar. 2001
LIMIN
MITSUBISHI HVIGBT MODULES
CM800HA-66H
HIGH POWER SWITCHING INSULATED TYPE
HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
MAXIMUM RATINGS 25°C)
Symbol VCES VGES (Note (Note (Note Tstg Viso Item Collector-emitter voltage Gate-emitter voltage Collector current Emitter current Maximum collector dissipation Junction temperature Storage temperature Isolation voltage Mounting torque Mass 25°C Pulse 25°C Pulse 25°C, IGBT part Conditions Ratings 3300 1600 1600 6900 +150 +125 6000 6.67 13.00 2.84 6.00 0.88 2.00 Unit
(Note (Note
Charged part base plate, rms, sinusoidal, 60Hz 1min. Main terminals screw Mounting screw Auxiliary terminals screw Typical value
ELECTRICAL CHARACTERISTICS 25°C)
Symbol ICES VGE(th) IGES VCE(sat) Cies Coes Cres (on) (off) (Note (Note (Note Rth(j-c)Q Rth(j-c)R Rth(c-f)
Note
Item Collector cutoff current Gate-emitter threshold voltage Gate-leakage current Collector-emitter saturation voltage Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Turn-on delay time Turn-on rise time Turn-off delay time Turn-off fall time Emitter-collector voltage Reverse recovery time Reverse recovery charge Thermal resistance Contact thermal resistance
Conditions CES, 80mA, VGES 25°C 800A, 125°C 1650V, 800A, 1650V, 800A VGE1 VGE2 3.75 Resistive load switching operation 800A, 800A -1600A Junction case, IGBT part Junction case, FWDi part Case fin, conductive grease applied
Limits 4.40 4.80 3.30 0.008
5.72 1.60 2.00 2.50 1.00 4.29 1.20 0.018 0.036
Unit
(Note
Pulse width repetition rate should such that device junction temp. does exceed Tjmax rating. VEC, die/dt represent characteristics anti-parallel, emitter collector free-wheel diode. Junction temperature should increase beyond 150°C. Pulse width repetition rate should such cause negligible temperature rise.
HVIGBT MODULES (High Voltage Insulated Gate Bipolar Transistor Modules)
Mar. 2001
LIMIN
MITSUBISHI HVIGBT MODULES
CM800HA-66H
HIGH POWER SWITCHING INSULATED TYPE
HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
PERFORMANCE CURVES
OUTPUT CHARACTERISTICS (TYPICAL) 1600 Tj=25°C 1600 VCE=10V VGE=12V VGE=11V VGE=13V VGE=14V VGE=15V VGE=20V VGE=10V TRANSFER CHARACTERISTICS (TYPICAL)
COLLECTOR CURRENT
COLLECTOR CURRENT
1200
1200
VGE=9V VGE=8V VGE=7V
25°C 125°C
COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat)
GATE-EMITTER VOLTAGE
COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL)
COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL)
COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat)
COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat)
VGE=15V
25°C 1600A 800A
320A
25°C 125°C 1200 1600
COLLECTOR CURRENT
GATE-EMITTER VOLTAGE
FREE-WHEEL DIODE FORWARD CHARACTERISTICS (TYPICAL)
CAPACITANCE (TYPICAL)
CAPACITANCE Cies, Coes, Cres (nF)
EMITTER CURRENT
Tj=25°C
25°C Cies, Coes 100kHz Cres 1MHz Cies
Coes
Cres 10-1 COLLECTOR-EMITTER VOLTAGE
Mar. 2001
EMITTER-COLLECTOR VOLTAGE
LIMIN
MITSUBISHI HVIGBT MODULES
CM800HA-66H
HIGH POWER SWITCHING INSULATED TYPE
HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) td(off) 10-1 td(on) 1650V, ±15V 3.75, 125°C Inductive load
REVERSE RECOVERY TIME (µs)
10-1
COLLECTOR CURRENT
EMITTER CURRENT
TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (IGBT part)
NORMALIZED TRANSIENT THERMAL IMPEDANCE Zth(j NORMALIZED TRANSIENT THERMAL IMPEDANCE Zth(j
TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (FWDi part) Single Pulse 25°C Rth(j 0.036K/W 10-1 10-2 10-3 10-2 10-1 TIME
Single Pulse 25°C Rth(j 0.018K/W 10-1 10-2 10-3 10-2 10-1 TIME
GATE CHARGE (TYPICAL)
GATE-EMITTER VOLTAGE
1650V 800A
1000
2000
3000
4000
5000
GATE CHARGE (nC)
Mar. 2001
REVERSE RECOVERY CURRENT
SWITCHING TIMES (µs)
REVERSE RECOVERY CHARACTERISTICS FREE-WHEEL DIODE (TYPICAL) 1650V, 125°C Inductive load ±15V, 3.75

LIMIN MITSUBISHI HVIGBT MODULES CM800HA-66H HIGH POWER

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