LIMIN MITSUBISHI HVIGBT MODULES CM800HA-34H HIGH POWER

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LIMIN MITSUBISHI HVIGBT MODULES CM800HA-34H HIGH POWER

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LIMIN
MITSUBISHI HVIGBT MODULES
CM800HA-34H
HIGH POWER SWITCHING INSULATED TYPE
HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
CM800HA-34H
800A VCES 1700V Insulated Type 1-element pack
APPLICATION Inverters, Converters, choppers, Induction heating, converters.
OUTLINE DRAWING CIRCUIT DIAGRAM
Dimensions
57±0.25 57±0.25 NUTS
124±0.25
CIRCUIT DIAGRAM
16.5 NUTS 18.5 61.5
MOUNTING HOLES 14.5
LABEL
HVIGBT MODULES (High Voltage Insulated Gate Bipolar Transistor Modules)
31.5
Mar. 2001
LIMIN
MITSUBISHI HVIGBT MODULES
CM800HA-34H
HIGH POWER SWITCHING INSULATED TYPE
HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
MAXIMUM RATINGS
Symbol VCES VGES (Note (Note (Note Tstg Viso Item Collector-emitter voltage Gate-emitter voltage Collector current Emitter current Maximum collector dissipation Junction temperature Storage temperature Isolation voltage Mounting torque Mass 25°C Pulse 25°C Pulse 25°C, IGBT part Conditions Ratings 1700 1600 1600 8300 +150 +125 4000 6.67 13.00 2.84 6.00 0.88 2.00 Unit
(Note (Note
Charged part base plate, rms, sinusoidal, 60Hz 1min. Main terminals screw Mounting screw Auxiliary terminals screw Typical value
ELECTRICAL CHARACTERISTICS 25°C)
Symbol ICES VGE(th) IGES VCE(sat) Cies Coes Cres (on) (off) (Note (Note (Note Rth(j-c)Q Rth(j-c)R Rth(c-f)
Note
Item Collector cutoff current Gate-emitter threshold voltage Gate-leakage current Collector-emitter saturation voltage Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Turn-on delay time Turn-on rise time Turn-off delay time Turn-off fall time Emitter-collector voltage Reverse recovery time Reverse recovery charge Thermal resistance Contact thermal resistance
Conditions CES, 80mA, VGES 25°C 800A, 125°C 850V, 800A, 850V, 800A VGE1 VGE2 Resistive load switching operation 800A, 800A -1600A Junction case, IGBT part Junction case, FWDi part Case fin, conductive grease applied
Limits 2.75 3.30 13.3 2.40 0.012
3.58 1.20 1.50 2.00 0.60 3.12 2.00 0.015 0.048
Unit
(Note
Pulse width repetition rate should such that device junction temp. does exceed Tjmax rating. VEC, die/dt represent characteristics anti-parallel, emitter collector free-wheel diode. Junction temperature should increase beyond 150°C. Pulse width repetition rate should such cause negligible temperature rise.
HVIGBT MODULES (High Voltage Insulated Gate Bipolar Transistor Modules)
Mar. 2001
LIMIN
MITSUBISHI HVIGBT MODULES
CM800HA-34H
HIGH POWER SWITCHING INSULATED TYPE
HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
PERFORMANCE CURVES
OUTPUT CHARACTERISTICS (TYPICAL) 1600 25°C 1600 TRANSFER CHARACTERISTICS (TYPICAL)
COLLECTOR CURRENT
1200
COLLECTOR CURRENT
1200
25°C 125°C
COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat)
GATE-EMITTER VOLTAGE
COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL)
COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL)
COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat)
COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat)
25°C 1600A
800A
25°C 125°C 1200 1600
320A
COLLECTOR CURRENT
GATE-EMITTER VOLTAGE
FREE-WHEEL DIODE FORWARD CHARACTERISTICS (TYPICAL)
CAPACITANCE (TYPICAL)
CAPACITANCE Cies, Coes, Cres (nF)
EMITTER CURRENT
25°C
25°C Cies, Coes 100kHz Cres 1MHz Cies
Coes Cres
10-1 COLLECTOR-EMITTER VOLTAGE
EMITTER-COLLECTOR VOLTAGE
Mar. 2001
LIMIN
MITSUBISHI HVIGBT MODULES
CM800HA-34H
HIGH POWER SWITCHING INSULATED TYPE
HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL)
REVERSE RECOVERY TIME (µs)
SWITCHING TIMES (µs)
850V, ±15V 2.5, 125°C Inductive load 10-1 td(off) td(on)
10-1
COLLECTOR CURRENT
EMITTER CURRENT
TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (IGBT part)
TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (FWDi part)
NORMALIZED TRANSIENT THERMAL IMPEDANCE Zth(j
10-1 10-2 10-3 10-2 10-1 TIME
NORMALIZED TRANSIENT THERMAL IMPEDANCE Zth(j
Single Pulse 25°C Rth(j 0.024K/
Single Pulse 25°C Rth(j 0.060K/ 10-1 10-2 10-3 10-2 10-1 TIME
GATE CHARGE (TYPICAL)
GATE-EMITTER VOLTAGE
850V 800A
2000
4000
6000
8000
10000
GATE CHARGE (nC)
Mar. 2001
REVERSE RECOVERY CURRENT
REVERSE RECOVERY CHARACTERISTICS FREE-WHEEL DIODE (TYPICAL) 850V, 125°C Inductive load ±15V,

LIMIN MITSUBISHI HVIGBT MODULES CM800HA-34H HIGH POWER

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