2881.2 200V, 3.500 Ohm, N-Channel Power MOSFET These N-Chann

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2881.2 200V, 3.500 Ohm, N-Channel Power MOSFET These N-Chann

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RFP2N20
2881.2
200V, 3.500 Ohm, N-Channel Power MOSFET
These N-Channel enhancement mode silicon gate power field effect transistors designed applications such switching regulators, switching converters, motor drivers, relay drivers drivers high power bipolar switching transistors requiring high speed gate drive power. These types operated directly from integrated circuits. Formerly developmental type TA09289.
Features
200V rDS(ON) 3.500
Symbol
Ordering Information
PART NUMBER RFP2N20 PACKAGE TO-220AB BRAND RFP2N20
NOTE: When ordering, include entire part number.
Packaging
JEDEC TO-220AB
SOURCE DRAIN GATE
DRAIN (FLANGE)
4-518
CAUTION: These devices sensitive electrostatic discharge; follow proper Handling Procedures. http://www.intersil.com 407-727-9207 Copyright Intersil Corporation 1999
RFP2N20
Absolute Maximum Ratings
25oC, Unless Otherwise Specified RFP2N20 Drain Source Voltage (Note VDSS Drain Gate Voltage (RGS 20k) (Note .VDGR Continuous Drain Current Pulsed Drain Current (Note Gate Source Voltage Maximum Power Dissipation Linear Derating Factor Operating Storage Temperature TSTG Maximum Temperature Soldering Leads 0.063in (1.6mm) from Case 10s. Package Body 10s, Techbrief .Tpkg UNITS
CAUTION: Stresses above those listed "Absolute Maximum Ratings" cause permanent damage device. This stress only rating operation device these other conditions above those indicated operational sections this specification implied.
NOTE: 25oC 125oC. 25oC, Unless Otherwise Specified SYMBOL BVDSS VGS(TH) IDSS TEST CONDITIONS 250µA, VDS, 250µA, (Figure Rated BVDSS Rated BVDSS, 125oC Gate Source Leakage Current Drain Source Resistance (Note Drain Source Voltage (Note Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse-Transfer Capacitance Thermal Resistance Junction Case IGSS rDS(ON) VDS(ON) td(ON) td(OFF) CISS COSS CRSS 1MHz, (Figure ±20V, 10V, (Figures 100V, 10V, 96.5 (Figure ±100 3.500
oC/W
Electrical Specifications
PARAMETER
UNITS
Drain Source Breakdown Voltage Gate Threshold Voltage Zero Gate Voltage Drain Current
Source Drain Diode Specifications
PARAMETER Source Drain Diode Voltage (Note Diode Reverse Recovery Time NOTES: Pulsed test: width 300µs duty cycle Repetitive rating: pulse width limited maximum junction temperature. SYMBOL dlSD/dt 50A/µs TEST CONDITIONS UNITS
4-519
RFP2N20 Typical Performance Curves
POWER DISSIPATION MULTIPLIER
Unless Otherwise Specified
CASE TEMPERATURE (oC) DRAIN CURRENT
CASE TEMPERATURE (oC)
FIGURE NORMALIZED POWER DISSIPATION CASE TEMPERATURE
FIGURE MAXIMUM CONTINUOUS DRAIN CURRENT CASE TEMPERATURE
RATED SINGLE PULSE 25oC DRAIN CURRENT
PULSE DURATION 80µs DUTY CYCLE 0.5% 25oC
DRAIN CURRENT
OPERATION THIS AREA LIMITED rDS(ON) 0.10
0.01
1000
VDS, DRAIN SOURCE VOLTAGE
VDS, DRAIN SOURCE VOLTAGE
FIGURE FORWARD BIAS SAFE OPERATING AREA
FIGURE SATURATION CHARACTERISTICS
IDS(ON), DRAIN SOURCE CURRENT
25oC VGS, GATE SOURCE VOLTAGE 125oC -40oC DRAIN CURRENT rDS(ON), DRAIN SOURCE RESISTANCE PULSE DURATION 80µs DUTY CYCLE 0.5% 25oC -40oC 125oC 25oC -40oC PULSE DURATION 80µs DUTY CYCLE 0.5% 125oC
FIGURE TRANSFER CHARACTERISTICS
FIGURE DRAIN SOURCE RESISTANCE DRAIN CURRENT
4-520
RFP2N20 Typical Performance Curves
NORMALIZED DRAIN SOURCE RESISTANCE PULSE DURATION 80µs DUTY CYCLE 0.5% NORMALIZED GATE THRESHOLD VOLTAGE
Unless Otherwise Specified (Continued)
250µA
JUNCTION TEMPERATURE (oC)
JUNCTION TEMPERATURE (oC)
FIGURE NORMALIZED DRAIN SOURCE RESISTANCE JUNCTION TEMPERATURE
VDS, DRAIN SOURCE VOLTAGE CISS
FIGURE NORMALIZED GATE THRESHOLD VOLTAGE JUNCTION TEMPERATURE
BVDSS GATE SOURCE VOLTAGE 0.75 BVDSS 0.50 BVDSS 0.25 BVDSS IG(REF) 0.09µA DRAIN SOURCE VOLTAGE G(REF) IG(ACT) G(REF) IG(ACT) BVDSS VGS, GATE SOURCE VOLTAGE
CAPACITANCE (pF) 1MHz CISS CRSS COSS
COSS CRSS VDS, DRAIN SOURCE VOLTAGE
TIME (µs)
NOTE: Refer Intersil Applications Notes AN7254 AN7260 FIGURE CAPACITANCE DRAIN SOURCE VOLTAGE FIGURE NORMALIZED SWITCHING WAVEFORMS CONSTANT GATE CURRENT
Test Circuits Waveforms
td(ON)
tOFF td(OFF)
PULSE WIDTH
FIGURE SWITCHING TIME TEST CIRCUIT
FIGURE RESISTIVE SWITCHING WAVEFORMS
4-521
RFP2N20 Test Circuits Waveforms
(ISOLATED SUPPLY) SAME TYPE 0.3µF Qg(TOT)
CURRENT REGULATOR
BATTERY
0.2µF
IG(REF) CURRENT SAMPLING RESISTOR
CURRENT SAMPLING RESISTOR IG(REF)
FIGURE GATE CHARGE TEST CIRCUIT
FIGURE GATE CHARGE WAVEFORMS
Intersil semiconductor products manufactured, assembled tested under ISO9000 quality systems certification.
Intersil semiconductor products sold description only. Intersil Corporation reserves right make changes circuit design and/or specifications time without notice. Accordingly, reader cautioned verify that data sheets current before placing orders. Information furnished Intersil believed accurate reliable. However, responsibility assumed Intersil subsidiaries use; infringements patents other rights third parties which result from use. license granted implication otherwise under patent patent rights Intersil subsidiaries.
information regarding Intersil Corporation products, site http://www.intersil.com
Sales Office Headquarters
NORTH AMERICA Intersil Corporation 883, Mail Stop 53-204 Melbourne, 32902 TEL: (407) 724-7000 FAX: (407) 724-7240 EUROPE Intersil Mercure Center 100, Fusee 1130 Brussels, Belgium TEL: (32) 2.724.2111 FAX: (32) 2.724.22.05 ASIA Intersil (Taiwan) Ltd. 7F-6, Hsing North Road Taipei, Taiwan Republic China TEL: (886) 2716 9310 FAX: (886) 2715 3029
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2881.2 200V, 3.500 Ohm, N-Channel Power MOSFET These N-Chann

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