5.028 CPU165MF IGBT MODULE Features Fully isolated

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5.028 CPU165MF IGBT MODULE Features Fully isolated

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5.028
CPU165MF
IGBT MODULE
Features
Fully isolated printed circuit board mount package Switching-loss rating includes "tail" losses HEXFRED soft ultrafast diodes Optimized medium operating frequency 10kHz) Fig. Current Frequency curve
Fast IGBT
Product Summary
Output Current Typical Motor Drive ARMS with 90°C, 125°C, Supply Voltage 360Vdc, Power Factor 0.8, Modulation Depth (See Figure
11,12
Description
IGBT technology International Rectifier's advanced line (Insulated Metal Substrate) Power Modules. These modules more efficient than comparable bipolar transistor modules, while same time having simpler gate-drive requirements familiar power MOSFET. This superior technology been coupled state materials system that maximizes power throughput with thermal resistance. This package highly suited motor drive applications where space premium.
IMS-1
Absolute Maximum Ratings
Parameter
VCES 25°C 100°C 100°C VISOL 25°C 100°C TSTG Collector-to-Emitter Voltage Continuous Collector Current, each IGBT Continuous Collector Current, each IGBT Pulsed Collector Current Clamped Inductive Load Current Diode Continuous Forward Current Diode Maximum Forward Current Gate-to-Emitter Voltage Isolation Voltage, terminal case, min. Maximum Power Dissipation, each IGBT Maximum Power Dissipation, each IGBT Operating Junction Storage Temperature Range Soldering Temperature, sec. Mounting torque, 6-32 screw.
Max.
2500 +150 (0.063 (1.6mm) from case) (0.55-0.8
Units
VRMS
Thermal Resistance
Parameter
(IGBT) (DIODE) (MODULE) Junction-to-Case, each IGBT, IGBT conduction Junction-to-Case, each diode, diode conduction Case-to-Sink, flat, greased surface Weight module
Typ.
(0.7)
Max.
Units
°C/W (oz)
Revision
C-133
Order
CPU165MF
Electrical Characteristics 25°C (unless otherwise specified)
V(BR)CES
V(BR)CES/TJ
VCE(on)
Parameter Collector-to-Emitter Breakdown Voltage Temp. Coeff. Breakdown Voltage Collector-to-Emitter Saturation Voltage
VGE(th) VGE(th)/TJ ICES IGES
Gate Threshold Voltage Temp. Coeff. Threshold Voltage Forward Transconductance Zero Gate Voltage Collector Current Diode Forward Voltage Drop Gate-to-Emitter Leakage Current
Min. Typ. Max. Units 0.62 V/°C mV/°C 6500 ±500
Conditions 250µA 1.0mA Fig. 23A, 150°C VGE, 250µA VGE, 250µA 100V, 600V 600V, 150°C Fig. 25A, 150°C ±20V
Switching Characteristics 25°C (unless otherwise specified)
td(on) td(off) Eoff td(on) td(off) Cies Coes Cres di(rec)M/dt Parameter Total Gate Charge (turn-on) Gate Emitter Charge (turn-on) Gate Collector Charge (turn-on) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Switching Loss Input Capacitance Output Capacitance Reverse Transfer Capacitance Diode Reverse Recovery Time Diode Peak Reverse Recovery Current Diode Reverse Recovery Charge Diode Peak Rate Fall Recovery During Min. Typ. 3000 Max. Units Conditions 400V Fig. 25°C 39A, 480V 15V, Energy losses include "tail" diode reverse recovery Fig. 150°C, Fig. 39A, 480V 15V, Energy losses include "tail" diode reverse recovery Fig. 1.0MHz 25°C Fig. 125°C 25°C Fig. 125°C 200V 25°C Fig. 1200 125°C di/dt 200A/µs A/µs 25°C Fig. 125°C
Notes: Repetitive rating; GE=20V, pulse width limited max. junction temperature. fig. VCC=80%(VCES), VGE=20V, L=10µH, 5.0, fig. Pulse width 80µs; duty factor 0.1%. Pulse width 5.0µs, single shot.
C-134
Order
CPU165MF
Total
rrent
90°C 125°C Power Factor Modulation Depth Rated Voltage
quency
Fig. Current Output Power, Synthesized Sine Wave
1000
1000
Collector-to-E itter urrent
Collector-to-E itter urrent
llector-to-Em itter oltage
-to-E itter olta
Fig. Typical Output Characteristics
Fig. Typical Transfer Characteristics
C-135
Order
CPU165MF
aximum Collector Current
llector-to-E mitte oltage
perature
perature
Fig. Maximum Collector Current Case Temperature
Fig. Collector-to-Emitter Voltage Case Temperature
herm Response
0.01 0.00001
0.0001
0.001
0.01
ectangular Pulse uration (sec)
Fig. Maximum IGBT Effective Transient Thermal Impedance, Junction-to-Case
C-136
Order
CPU165MF
7000
apacitance
5000
Cies
4000
Coes
3000
ate-to-Em itter oltage
6000
1MHz SHORTED
2000
Cres
1000
llector-to-Em itter oltage
Total harge
Fig. Typical Capacitance Collector-to-Emitter Voltage
Fig. Typical Gate Charge Gate-to-Emitter Voltage
otal hing
Total witching Losses
istance
peratu
Fig. Typical Switching Losses Gate Resistance
Fig. Typical Switching Losses Case Temperature
C-137
Order
CPU165MF
r-to itte
Total itching Losses
50°C
1000
1000
ollecto r-to-E itter urrent
r-to-E itte olta
Fig. Typical Switching Losses Collector-to-Emitter Current
Fig. Turn-Off
Instantaneous Forward Current
150°C 125°C
25°C
Forward Voltage Drop
Fig. Maximum Forward Voltage Drop Instantaneous Forward Current C-138
Order
CPU165MF
200V 125°C 25°C
200V 125°C 25°C
(ns)
IRRM
(A/µs)
1000
(A/µs)
1000
Fig. Typical Reverse Recovery di/dt
Fig. Typical Recovery Current di/dt
1500
10000
200V 125°C 25°C
1200
200V 125°C 25°C
di(rec)M/dt (A/µs)
(nC)
1000
1000
(A/µs)
(A/µs)
1000
Fig. Typical Stored Charge di/dt C-139
Fig. Typical di(rec)M/dt dif/dt
Order
CPU165MF
+Vge
Same type device D.U.T. 430µF D.U.T. td(off)
Eoff
t1+5µS
Fig. Test Circuit Measurement ILM, Eon, Eoff(diode), trr, Qrr, Irr, td(on), td(off),
Fig. Test Waveforms Circuit Fig. 18a, Defining
Eoff, td(off),
GATE VOLTAGE D.U.T.
VOLTAGE CURRENT
DIODE RECOVERY WAVEFORMS td(on) DIODE REVERSE RECOVERY ENERGY
Erec
Fig. Test Waveforms Circuit Fig. 18a,
Defining Eon, td(on),
Fig. Test Waveforms Circuit Fig. 18a,
Defining Erec, trr, Qrr,
Refer Section following: Appendix Section page Fig. Macro Waveforms Test Circuit Fig. Fig. Clamped Inductive Load Test Circuit Fig. Pulsed Collector Current Test Circuit Package Outline IMS-1 Package pins) Section page D-13
C-140
Order

5.028 CPU165MF IGBT MODULE Features Fully isolated

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