3952.5 3.5A, 30V, 0.06 Ohm, Logic Level, Dual N-Channel LittleFET

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3952.5 3.5A, 30V, 0.06 Ohm, Logic Level, Dual N-Channel LittleFET

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RF1K49088
3952.5
3.5A, 30V, 0.06 Ohm, Logic Level, Dual N-Channel LittleFETPower MOSFET
This Dual N-Channel power MOSFET manufactured using advanced MegaFET process. This process, which uses feature sizes approaching those integrated circuits, gives optimum utilization silicon, resulting outstanding performance. designed applications such switching regulators, switching converters, motor drivers, relay drivers, voltage switches. This product achieves full rated conduction gate bias range, thereby facilitating true on-off power control directly from logic level (5V) integrated circuits. Formerly developmental type TA49088.
Features
3.5A, rDS(ON) 0.060 Temperature Compensating PSPICE® Model On-Resistance Gate Drive Voltage Curves Peak Current Pulse Width Curve Rating Curve Related Literature TB334 "Guidelines Soldering Surface Mount Components Boards"
Symbol
BRAND RF1K49088
S1(1) G1(2) D1(8) D1(7)
Ordering Information
PART NUMBER RF1K49088 PACKAGE MS-012AA
NOTE: When ordering, entire part number. ordering tape reel, suffix part number, i.e., RF1K4908896.
D2(6) D2(5)
S2(3) G2(4)
Packaging
JEDEC MS-012AA
BRANDING DASH
8-94
CAUTION: These devices sensitive electrostatic discharge; follow proper Handling Procedures. LittleFETis trademark Intersil Corporation. PSPICE® registered trademark MicroSim Corporation. http://www.intersil.com 407-727-9207 Copyright Intersil Corporation 1999
RF1K49088
Absolute Maximum Ratings
25oC Unless Otherwise Specified RF1K49088 Refer Peak Current Curve Refer Curve 0.016 UNITS
Drain Source Voltage (Note VDSS Drain Gate Voltage (RGS 20k, Note VDGR Gate Source Voltage Drain Current Continuous (Pulse Width 5s). Pulsed (Figure .IDM Pulsed Avalanche Rating (Figure Power Dissipation 25oC. Derate Above 25oC Operating Storage Temperature TSTG Maximum Temperature Soldering Leads 0.063in (1.6mm) from Case 10s. Package Body 10s, Techbrief Tpkg
W/oC
CAUTION: Stresses above those listed "Absolute Maximum Ratings" cause permanent damage device. This stress only rating operation device these other conditions above those indicated operational sections this specification implied.
NOTE: 25oC 125oC.
Electrical Specifications
PARAMETER
25oC, Unless Otherwise Specified SYMBOL BVDSS VGS(TH) IDSS TEST CONDITIONS 250µA, (Figure VDS, 250µA, (Figure 30V, ±10V 3.5A, (Figures 15V, 3.5A, 4.29, (Figure 25oC 150oC 24V, 3.5A, 6.86 (Figure Pulse width Device mounted FR-4 material ±100 0.060 62.5 UNITS
oC/W
Drain Source Breakdown Voltage Gate Threshold Voltage Zero Gate Voltage Drain Current
Gate Source Leakage Current Drain Source Resistance Turn-On Time Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-Off Time Total Gate Charge Gate Charge Threshold Gate Charge Input Capacitance Output Capacitance Reverse Transfer Capacitance Thermal Resistance Junction-to-Ambient
IGSS rDS(ON) td(ON) td(OFF) tOFF Qg(TOT) Qg(5) Qg(TH) CISS COSS CRSS
25V, 1MHz (Figure
Source Drain Diode Specifications
PARAMETER Source Drain Diode Voltage Reverse Recovery Time SYMBOL TEST CONDITIONS 3.5A 3.5A, dISD/dt 100A/µs 1.25 UNITS
8-95
RF1K49088 Typical Performance Curves
POWER DISSIPATION MULTIPLIER DRAIN CURRENT AMBIENT TEMPERATURE (oC) AMBIENT TEMPERATURE (oC)
FIGURE NORMALIZED POWER DISSIPATION AMBIENT TEMPERATURE
FIGURE MAXIMUM CONTINUOUS DRAIN CURRENT AMBIENT TEMPERATURE
ZJA, NORMALIZED THERMAL IMPEDANCE
DUTY CYCLE DESCENDING ORDER 0.05 0.02 0.01
SINGLE PULSE NOTES: DUTY FACTOR: t1/t2 PEAK 10-1 RECTANGULAR PULSE DURATION
0.01 10-3
10-2
FIGURE NORMALIZED MAXIMUM TRANSIENT THERMAL IMPEDANCE
PEAK CURRENT CAPABILITY
RATED 25oC
TEMPERATURES ABOVE 25oC DERATE PEAK CURRENT FOLLOWS:
DRAIN CURRENT
10ms 100ms
25oC
OPERATION THIS AREA LIMITED rDS(ON) VDSS(MAX)
TRANSCONDUCTANCE LIMIT CURRENT THIS REGION 10-5
0.01
10-4
VDS, DRAIN SOURCE VOLTAGE
10-3 10-2 10-1 PULSE WIDTH
FIGURE FORWARD BIAS SAFE OPERATING AREA
FIGURE PEAK CURRENT CAPABILITY
8-96
RF1K49088 Typical Performance Curves
(Continued)
4.5V
AVALANCHE CURRENT
STARTING 25oC
DRAIN CURRENT
(L)(IAS)/(1.3*RATED BVDSS VDD) (L/R)ln[(IAS*R)/(1.3*RATED BVDSS VDD)
PULSE DURATION 80µs DUTY CYCLE 0.5% 25oC VDS, DRAIN SOURCE VOLTAGE
STARTING 150oC
tAV, TIME AVALANCHE (ms)
NOTE: Refer Intersil Application Notes AN9321 AN9322. FIGURE UNCLAMPED INDUCTIVE SWITCHING CAPABILITY FIGURE SATURATION CHARACTERISTICS
ID(ON) ON-STATE DRAIN CURRENT
25oC 150oC
rDS(ON) ON-STATE RESISTANCE
PULSE DURATION 80µs DUTY CYCLE 0.5% -55oC
7.0A PULSE DURATION 80µs DUTY CYCLE 0.5%
3.5A 1.75A
0.5A
VGS, GATE SOURCE VOLTAGE
VGS, GATE SOURCE VOLTAGE
FIGURE TRANSFER CHARACTERISTICS
FIGURE DRAIN SOURCE RESISTANCE GATE VOLTAGE DRAIN CURRENT
SWITCHING TIME (ns)
15V, 3.5A, 4.29 NORMALIZED DRAIN SOURCE RESISTANCE tD(OFF)
PULSE DURATION 80µs DUTY CYCLE 0.5% 3.5A
tD(ON)
RGS, GATE SOURCE RESISTANCE
JUNCTION TEMPERATURE (oC)
FIGURE SWITCHING TIME GATE RESISTANCE
FIGURE NORMALIZED DRAIN SOURCE RESISTANCE JUNCTION TEMPERATURE
8-97
RF1K49088 Typical Performance Curves
VDS, 250µA NORMALIZED DRAIN SOURCE BREAKDOWN VOLTAGE
(Continued)
250µA
THRESHOLD VOLTAGE
NORMALIZED GATE
JUNCTION TEMPERATURE (oC)
JUNCTION TEMPERATURE (oC)
FIGURE NORMALIZED GATE THRESHOLD VOLTAGE JUNCTION TEMPERATURE
1000
FIGURE NORMALIZED DRAIN SOURCE BREAKDOWN VOLTAGE JUNCTION TEMPERATURE
DRAIN-SOURCE VOLTAGE 5.00 BVDSS 22.5 BVDSS 3.75 GATE-SOURCE VOLTAGE
CISS CAPACITANCE (pF) 1MHz CISS CRSS COSS
COSS
0.75 BVDSS 0.50 BVDSS 0.25 BVDSS 8.57 IG(REF) 0.2mA TIME (µs)
2.50
1.25
CRSS
0.00
VDS, DRAIN SOURCE VOLTAGE
NOTE: Refer Intersil Application Notes AN7254 AN7260. FIGURE CAPACITANCE DRAIN SOURCE VOLTAGE FIGURE NORMALIZED SWITCHING WAVEFORMS CONSTANT GATE CURRENT
Test Circuits Waveforms
BVDSS VARY OBTAIN REQUIRED PEAK
0.01
FIGURE UNCLAMPED ENERGY TEST CIRCUIT
FIGURE UNCLAMPED ENERGY WAVEFORMS
8-98
RF1K49088 Test Circuits Waveforms
(Continued)
td(ON)
tOFF td(OFF)
PULSE WIDTH
FIGURE SWITCHING TIME TEST CIRCUIT
FIGURE RESISTIVE SWITCHING WAVEFORMS
CURRENT REGULATOR
(ISOLATED SUPPLY) Qg(5) Qg(TOT)
BATTERY
0.2µF
0.3µF
SAME TYPE
Qg(TH)
Ig(REF) CURRENT SAMPLING RESISTOR
CURRENT SAMPLING RESISTOR Ig(REF)
FIGURE GATE CHARGE TEST CIRCUIT
FIGURE GATE CHARGE WAVEFORMS
Soldering Precautions
soldering process creates considerable thermal stress semiconductor component. melting temperature solder higher than maximum rated temperature device. amount time device heated high temperature should minimized assure device reliability. Therefore, following precautions should always observed order minimize thermal stress which devices subjected. Always preheat device. delta temperature between preheat soldering should always less than 100oC. Failure preheat device result excessive thermal stress which damage device. maximum temperature gradient should less than second when changing from preheating soldering. peak temperature soldering process should least 30oC higher than melting point solder chosen. maximum soldering temperature time must exceed 260oC seconds leads case device. After soldering complete, device should allowed cool naturally least three minutes, forced cooling will increase temperature gradient result latent failure mechanical stress. During cooling, mechanical stress shock should avoided.
8-99
RF1K49088 PSPICE Electrical Model
SUBCKT RF1K49088 1.081e-9 1.138e-9 0.673e-9
7/21/94
DPLCAP MOS2 MOS1 RSOURCE EBREAK DBODY RDRAIN DBREAK LDRAIN
DRAIN
DBODY DBDMOD DBREAK DBKMOD DPLCAP DPLCAPMOD EBREAK 34.1 EVTO
GATE LGATE RGATE
EVTO
LSOURCE SOURCE RVTO
RBREAK
LDRAIN 1e-9 LGATE 1.233e-9 LSOURCE 0.452e-9 MOS1 MOSMOD 0.99 MOS2 MOSMOD 0.01 RBREAK RBKMOD RDRAIN RDSMOD 1.408e-3 RGATE 3.33 RSOURCE RDSMOD 20e-3 RVTO RVTOMOD S1AMOD S1BMOD S2AMOD S2BMOD
VBAT
VBAT 0.211 .MODEL DBDMOD 2.82e-13 1.72e-2 TRS1 1.58e-3 TRS2 1.23e-7 9.19e-10 2.03e-8) .MODEL DBKMOD 2.65e-1 TRS1 5.00e-3 TRS2 7.09e-5) .MODEL DPLCAPMOD (CJO 0.42e-9 1e-30 .MODEL MOSMOD NMOS (VTO 2.01 15.01 1e-30 .MODEL RBKMOD (TC1 1.02e-3 -1.98e-6) .MODEL RDSMOD (TC1 3.50e-3 3.70e-6) .MODEL RVTOMOD (TC1 -2.53e-3 8.13e-7) .MODEL S1AMOD VSWITCH (RON 1e-5 ROFF -6.2 VOFF= -3.8) .MODEL S1BMOD VSWITCH (RON 1e-5 ROFF -3.8 VOFF= -6.2) .MODEL S2AMOD VSWITCH (RON 1e-5 ROFF -1.4 VOFF= 4.1) .MODEL S2BMOD VSWITCH (RON 1e-5 ROFF VOFF= -1.4) .ENDS NOTE: further discussion PSPICE model, consult PSPICE Sub-circuit Power MOSFET Featuring Global Temperature Options; IEEE Power Electronics Specialist Conference Records, 1991.
Intersil semiconductor products manufactured, assembled tested under ISO9000 quality systems certification.
Intersil semiconductor products sold description only. Intersil Corporation reserves right make changes circuit design and/or specifications time without notice. Accordingly, reader cautioned verify that data sheets current before placing orders. Information furnished Intersil believed accurate reliable. However, responsibility assumed Intersil subsidiaries use; infringements patents other rights third parties which result from use. license granted implication otherwise under patent patent rights Intersil subsidiaries.
information regarding Intersil Corporation products, site http://www.intersil.com
8-100

3952.5 3.5A, 30V, 0.06 Ohm, Logic Level, Dual N-Channel LittleFET

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