200V 106A 0.020W FREDFET Power generation loss, high voltage

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200V 106A 0.020W FREDFET Power generation loss, high voltage

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APT20M20JFLL
200V 106A 0.020W
FREDFET
Power generation loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction switching losses addressed with Power significantly lowering RDS(ON) Power 7combines lower conduction switching losses along with exceptionally fast switching speeds inherent with APT's patented metal gate structure. Lower Input Capacitance Lower Miller Capacitance Lower Gate Charge,
MAXIMUM RATINGS
Symbol VDSS VGSM TJ,TSTG Parameter Drain-Source Voltage
ISOTOP
Recognized"
Increased Power Dissipation Easier Drive Popular SOT-227 Package FAST RECOVERY BODY DIODE
Ratings: 25°C unless otherwise specified.
APT20M20JFLL UNIT Volts Amps
Continuous Drain Current 25°C Pulsed Drain Current
Gate-Source Voltage Continuous Gate-Source Voltage Transient
Total Power Dissipation 25°C Linear Derating Factor
Operating Storage Junction Temperature Range Lead Temperature: 0.063" from Case Sec. Avalanche Current
Repetitive Avalanche Energy
Single Pulse Avalanche Energy
3.84
(Repetitive Non-Repetitive)
Volts Watts W/°C Amps
2500
STATIC ELECTRICAL CHARACTERISTICS
Symbol BVDSS ID(on) RDS(on) IDSS IGSS VGS(th) Characteristic Test Conditions Drain-Source Breakdown Voltage (VGS 250µA) State Drain Current
UNIT Volts Amps
0.020 1000 ±100
(VDS D(on) DS(on) Max, 10V)
Drain-Source On-State Resistance
(VGS 10V, ID[Cont.])
Ohms Volts
050-7045 4-2001
Zero Gate Voltage Drain Current (VDS VDSS, Zero Gate Voltage Drain Current (VDS VDSS, 125°C) Gate-Source Leakage Current (VGS ±30V, Gate Threshold Voltage (VDS VGS, 2.5mA)
CAUTION: These Devices Sensitive Electrostatic Discharge. Proper Handling Procedures Should Followed.
Website http://www.advancedpower.com
EUROPE
S.W. Columbia Street Chemin Magret
Bend, Oregon 97702-1035 F-33700 Merignac France
Phone: (541) 382-8028 Phone: (33)
FAX: (541) 388-0364 FAX: (33)
DYNAMIC CHARACTERISTICS
Symbol Ciss Coss Crss d(on) d(off) Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge
APT20M20JFLL
Test Conditions VDSS UNIT
5870 1990
Gate-Source Charge Turn-on Delay Time Rise Time
Gate-Drain ("Miller") Charge
Turn-off Delay Time Fall Time
SOURCE-DRAIN DIODE RATINGS CHARACTERISTICS
Symbol
Characteristic Test Conditions Pulsed Source Current
Continuous Source Current (Body Diode) (Body Diode)
Diode Forward Voltage
Peak Diode Recovery dv/dt
IRRM
Reverse Recovery Time [Cont.], di/dt 100A/µs) Reverse Recovery Charge [Cont.], di/dt 100A/µs) Peak Recovery Current [Cont.], di/dt 100A/µs)
[Cont.] 25°C VDSS 0.6W [Cont.] 25°C
UNIT Amps Volts V/ns
(VGS [Cont.])
25°C 25°C
125°C
125°C 25°C 125°C
Amps
THERMAL CHARACTERISTICS
Symbol RqJC RqJA Characteristic Junction Case Junction Ambient
MIL-STD-750 Method 3471 Starting +25°C, .44mH,
UNIT °C/W
0.26
Repetitive Rating: Pulse width limited maximum junction
temperature. Pulse Test: Pulse width Duty Cycle
25W, Peak 106A
Reserves right change, without notice, specifications information contained herein.
SOT-227 (ISOTOP®) Package Outline
31.5 (1.240) 31.7 (1.248) (.307) (.322) W=4.1 (.161) W=4.3 (.169) H=4.8 (.187) H=4.9 (.193) places) 11.8 (.463) 12.2 (.480) (.350) (.378) places)
(.157) places)
(.157) (.165) places)
25.2 (0.992) 0.75 (.030) 12.6 (.496) 25.4 (1.000) 0.85 (.033) 12.8 (.504)
(.129) (.143)
1.95 (.077) 2.14 (.084)
050-7045 4-2001
14.9 (.587) 15.1 (.594) 30.1 (1.185) 30.3 (1.193) 38.0 (1.496) 38.2 (1.504)
Source
Drain
Source terminals shorted internally. Current handling capability equal either Source terminal.
Source Dimensions Millimeters (Inches)
APT's devices covered more following U.S.patents: 4,895,810 5,256,583 5,045,903 4,748,103 5,089,434 5,283,202
Gate
5,182,234 5,231,474
5,019,522 5,434,095
5,262,336 5,528,058

200V 106A 0.020W FREDFET Power generation loss, high voltage

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