-6A, -80V -100V, 0.600 Ohm, P-Channel Power MOSFETs These P-Chann

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-6A, -80V -100V, 0.600 Ohm, P-Channel Power MOSFETs These P-Chann

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RFP6P08, RFP6P10
-6A, -80V -100V, 0.600 Ohm, P-Channel Power MOSFETs
These P-Channel enhancement mode silicon gate power field effect transistors designed high speed applications such switching regulators, switching convertors, relay drivers, drivers high power bipolar switching transistors. Formerly developmental type TA09046.
Features
-6A, -80V -100V rDS(ON) 0.600 Power Dissipation Limited Nanosecond Switching Speeds Linear Transfer Characteristics High Input Impedance Majority Carrier Device
BRAND
Ordering Information
PART NUMBER RFP6P08 RFP6P10 PACKAGE TO-220AB TO-220AB RFP6P08 RFP6P10
Related Literature TB334 "Guidelines Soldering Surface Mount Components Boards"
NOTE: When ordering, include entire part number.
Symbol
Packaging
JEDEC TO-220AB
SOURCE DRAIN GATE
DRAIN (FLANGE)
CAUTION: These devices sensitive electrostatic discharge; follow proper Handling Procedures. www.intersil.com 407-727-9207 Copyright Intersil Corporation 1999
RFP6P08, RFP6P10
Absolute Maximum Ratings
25oC, Unless Otherwise Specified RFP6P08 0.48 RFP6P10 0.48 UNITS W/oC
Drain Source Voltage (Note Drain Gate Voltage (RGS 20k) (Note VDGR Continuous Drain Current Continuous Pulsed Drain Current (Note Gate Source Voltage Maximum Power Dissipation Linear Derating Factor Operating Storage Temperature Range TSTG Maximum Temperature Soldering Leads 0.063in (1.6mm) from Case 10s. Package Body 10s, Techbrief (for TO-220AB) Tpkg
CAUTION: Stresses above those listed "Absolute Maximum Ratings" cause permanent damage device. This stress only rating operation device these other conditions above those indicated operational sections this specification implied.
NOTE: 25oC 125oC.
Electrical Specifications
PARAMETER
25oC, Unless Otherwise Specified SYMBOL BVDSS TEST CONDITIONS 250µA, -100 VGS(TH) IDSS 250µA (Figure Rated BVDSS Rated BVDSS 125oC) 1MHz (Figure RFP6P08, RFP6P10 ±100 -3.6 2.083
oC/W
UNITS
Drain Source Breakdown Voltage RFP6P08 RFP6P10 Gate Threshold Voltage Zero-Gate Voltage Drain Current
Gate Source Leakage Current Drain Source Resistance (Note Drain Source Voltage (Note Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse-Transfer Capacitance Thermal Resistance Junction Case
IGSS rDS(ON) VDS(ON) td(ON) td(OFF) CISS COSS CRSS
±20V, -10V (Figures -10V 50V, -10V (Figures
Source Drain Diode Specifications
PARAMETER Source Drain Diode Voltage (Note Reverse Recovery Time NOTES: Pulse Test: Pulse Duration 300µs max, Duty Cycle Repetitive rating: pulse width limited maximum junction temperature. SYMBOL dlSD/dt 50A/µs TEST CONDITIONS -1.4 UNITS
RFP6P08, RFP6P10 Typical Performance Curves
POWER DISSIPATION MULTIPLIER DRAIN CURRENT
CASE TEMPERATURE (oC)
CASE TEMPERATURE (oC)
FIGURE NORMALIZED POWER DISSIPATION CASE TEMPERATURE
FIGURE MAXIMUM CONTINUOUS DRAIN CURRENT CASE TEMPERATURE
OPERATION THIS AREA LIMITED rDS(ON) DRAIN CURRENT
RATED 25oC DRAIN CURRENT
PULSE DURATION 80µs 25oC
-20V
CONTINUOUS
-10V
VDS(MAX) -100V RFP8P10 VDS(MAX) -80V RFP8P08 -100 DRAIN SOURCE VOLTAGE -1000
DRAIN SOURCE VOLTAGE
FIGURE FORWARD BIAS SAFE OPERATING AREA
FIGURE SATURATION CHARACTERISTICS
IDS(ON) DRAIN SOURCE CURRENT
GATE SOURCE VOLTAGE 25oC 125oC PULSE DURATION 80µs -40oC rDS(ON) DRAIN SOURCE
RESISTANCE
PULSE DURATION 80µs
125oC
25oC
-40oC
DRAIN CURRENT
FIGURE TRANSFER CHARACTERISTICS
FIGURE DRAIN SOURCE RESISTANCE GATE VOLTAGE DRAIN CURRENT
RFP6P08, RFP6P10 Typical Performance Curves
NORMALIZED DRAIN SOURCE RESISTANCE -10V NORMALIZED GATE THRESHOLD VOLTAGE
(Continued)
250µA -10V
JUNCTION TEMPERATURE (oC)
JUNCTION TEMPERATURE (oC)
FIGURE NORMALIZED DRAIN SOURCE RESISTANCE JUNCTION TEMPERATURE
DRAIN SOURCE VOLTAGE CAPACITANCE (pF) COSS DRAIN SOURCE VOLTAGE CRSS CISS 1MHz CISS CRSS COSS
FIGURE NORMALIZED GATE THRESHOLD VOLTAGE JUNCTION TEMPERATURE
BVDSS GATE SOURCE VOLTAGE GATE SOURCE VOLTAGE
BVDSS
BVDSS
16.67 (REF) 0.46mA -10V 0.75BVDSS 0.50BVDSS 0.25BVDSS DRAIN SOURCE VOLTAGE
(REF) (ACT) TIME (ms) (REF) (ACT)
NOTE: Refer Intersil Applications Notes AN7254 AN7260. FIGURE CAPACITANCE DRAIN SOURCE VOLTAGE FIGURE NORMALIZED SWITCHING WAVEFORMS CONSTANT GATE CURRENT
Test Circuits Waveforms
VARY OBTAIN REQUIRED PEAK
0.01
BVDSS
FIGURE UNCLAMPED ENERGY TEST CIRCUIT
FIGURE UNCLAMPED ENERGY WAVEFORMS
RFP6P08, RFP6P10 Test Circuits Waveforms
(Continued)
td(ON)
tOFF td(OFF)
PULSE WIDTH
FIGURE SWITCHING TIME TEST CIRCUIT
FIGURE RESISTIVE SWITCHING WAVEFORMS
Intersil semiconductor products manufactured, assembled tested under ISO9000 quality systems certification.
Intersil semiconductor products sold description only. Intersil Corporation reserves right make changes circuit design and/or specifications time without notice. Accordingly, reader cautioned verify that data sheets current before placing orders. Information furnished Intersil believed accurate reliable. However, responsibility assumed Intersil subsidiaries use; infringements patents other rights third parties which result from use. license granted implication otherwise under patent patent rights Intersil subsidiaries. information regarding Intersil Corporation products, site www.intersil.com
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-6A, -80V -100V, 0.600 Ohm, P-Channel Power MOSFETs These P-Chann

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