Silicon Power Darlington Transistor SEMICONDUCTOR TECHNICAL DATA

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Silicon Power Darlington Transistor SEMICONDUCTOR TECHNICAL DATA

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Motorola, Inc. 1995 Motorola Bipolar Power Transistor Device Data Specified -40_C Max. Photoglass Passivation Reliability Stability. BU323A monolithic darlington transistor designed automotive ignition, switching regulator motor control applications.
Silicon Power Darlington Transistor
SEMICONDUCTOR TECHNICAL DATA
MOTOROLA
THERMAL CHARACTERISTICS
MAXIMUM RATINGS
Maximum Lead Temperature Soldering Purposes: from Case Seconds Thermal Resistance, Junction Case Operating Storage Junction Total Power Dissipation 25_C 100_C Derate above 25_C Base Current Continuous Collector Current Continuous Peak Emitter-Base Voltage Collector-Base Voltage Collector-Emitter Voltage Characteristic Rating
10%.
BASE
VCEO(sus)
Symbol
Symbol
Tstg
VCBO
VEBO
COLLECTOR
EMITTER
Value
AMPERE PEAK POWER TRANSISTOR DARLINGTON SILICON VOLTS WATTS
BU323A
Order this document BU323A/D
CASE 1-07 TO-204AA (TO-3)
Watts Watts W/_C
_C/W
Unit
Unit
3-231
BU323A
Pulse Test: Pulse Width Duty Cycle FUNCTIONAL TESTS SWITCHING CHARACTERISTICS DYNAMIC CHARACTERISTICS CHARACTERISTICS1 CHARACTERISTICS1
ELECTRICAL CHARACTERISTICS 25_C unless otherwise noted)
3-232
Adjust such that reaches Required value.
Pulsed Energy Test (See Figure
Second Breakdown Collector Current with Base-Forward Biased
Fall Time
Storage Time
Output Capacitance (VCB Vdc, ftest kHz)
Diode Forward Voltage Adc)
Base-Emitter Voltage Adc, Vdc)
Base-Emitter Saturation Voltage Adc, mAdc) Adc, mAdc) Adc, mAdc, 40_C)
Collector-Emitter Saturation Voltage Adc, mAdc) Adc, mAdc) Adc, mAdc) Adc, mAdc, 40_C)
Current Gain Adc, Vdc) Adc, Vdc) Adc, Vdc)
Emitter Cutoff Current (VEB Vdc,
Collector Cutoff Current (Rated VCBO,
Collector Cutoff Current (Rated VCER, Ohms)
Collector-Emitter sustaining Voltage (Figure Ohms, Unclamped
Collector-Emitter Sustaining Voltage (Figure mAdc, Vclamp Rated VCEO)
Figure Sustaining Voltage Test Circuit
BC337
1N4001
VCEO
Characteristic
VCER
(VCC Vdc, Adc, Adc) Fig.
CLAMPED
UNCLAMPED
Vclamp
VCEO(sus)
VCER(sus)
VCE(sat)
VBE(sat)
VBE(on)
Symbol
IC2L
Motorola Bipolar Power Transistor Device Data Figure Switching Times Test Circuit
ICBO IEBO ICER IS/B
ftest PULSE WIDTH 1N4001
Figure10
2000
mAdc
mAdc
mAdc
Unit
BU323A
2000 1000 hFE, CURRENT GAIN 25°C 150°C COLLECTOR-EMITTER VOLTAGE (VOLTS) 25°C
COLLECTOR CURRENT (AMP)
0.002
0.005 0.01
0.02 0.05 BASE CURRENT (AMP)
Figure Current Gain
VCE(sat) COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat) COLLECTOR-EMITTER SATURATION VOLTAGE
Figure Collector Saturation Region
IC/IB
25°C
COLLECTOR CURRENT
COLLECTOR CURRENT
Figure Collector-Emitter Saturation Voltage
Figure Base-Emitter Voltage
COLLECTOR CURRENT
TIME
75°C 150°C
ICES
25°C IC/IB
25°C
COLLECTOR CURRENT (AMP)
FORWARD REVERSE VBE, BASE-EMITTER VOLTAGE (VOLTS)
Figure Turn-Off Switching Time
Figure Collector Cutoff Region
Motorola Bipolar Power Transistor Device Data
3-233
BU323A
r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED) 0.07 0.05 0.03 0.02 0.01 0.01 SINGLE PULSE 0.02 0.05 0.05 0.02 0.01 RJC(t) r(t) °C/W CURVES APPLY POWER PULSE TRAIN SHOWN READ TIME TJ(pk) P(pk) RJC(t) TIME (ms) P(pk)
DUTY CYCLE, t1/t2 1000 2000
Figure Thermal Response
COLLECTOR CURRENT (AMP)
25°C
0.01 0.005
BONDING WIRE LIMIT THERMAL LIMIT (SINGLE PULSE) SECOND BREAKDOWN LIMIT VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
Figure Forward Bias Safe Operating Area
There limitations power handling ability transistor: average junction temperature second breakdown. Safe operating area curves indicate limits transistor that must observed reliable operation, i.e., transistor must subjected greater dissipation than curves indicate. data Figure based 25_C; TJ(pk) variable depending power level. Second breakdown pulse limits valid duty cycles must derated when 25_C. Second breakdown limitations derate same thermal limitations. Allowable current voltages shown Figure found case temperature using appropriate curve Figure TJ(pk) calculated from data Figure high case temperatures, thermal limitations will reduce power that handled values less than limitations imposed second breakdown.
POWER DERATING FACTOR
INDUCTIVE LOAD
SECOND BREAKDOWN DERATING THERMAL DERATING
1N4001 BC337
1N4001 0.22
(BU323A)
CASE TEMPERATURE (°C)
selected such that reaches before switch-off. NOTE: Figure specifies energy handling capabilities automotive ignition circuit.
Figure Power Derating
Figure Ignition Test Circuit
3-234
Motorola Bipolar Power Transistor Device Data
BU323A
PACKAGE DIMENSIONS
SEATING PLANE
NOTES: DIMENSIONING TOLERANCING ANSI Y14.5M, 1982. CONTROLLING DIMENSION: INCH. RULES NOTES ASSOCIATED WITH REFERENCED TO-204AA OUTLINE SHALL APPLY.
0.13 (0.005)
0.13 (0.005)
INCHES 1.550 1.050 0.250 0.335 0.038 0.043 0.055 0.070 0.430 0.215 0.440 0.480 0.665 0.830 0.151 0.165 1.187 0.131 0.188
MILLIMETERS 39.37 26.67 6.35 8.51 0.97 1.09 1.40 1.77 10.92 5.46 11.18 12.19 16.89 21.08 3.84 4.19 30.15 3.33 4.77
STYLE BASE EMITTER CASE: COLLECTOR
CASE 1-07 TO-204AA (TO-3) ISSUE
Motorola Bipolar Power Transistor Device Data
3-235
BU323A
Motorola reserves right make changes without further notice products herein. Motorola makes warranty, representation guarantee regarding suitability products particular purpose, does Motorola assume liability arising application product circuit, specifically disclaims liability, including without limitation consequential incidental damages. "Typical" parameters vary different applications. operating parameters, including "Typicals" must validated each customer application customer's technical experts. Motorola does convey license under patent rights rights others. Motorola products designed, intended, authorized components systems intended surgical implant into body, other applications intended support sustain life, other application which failure Motorola product could create situation where personal injury death occur. Should Buyer purchase Motorola products such unintended unauthorized application, Buyer shall indemnify hold Motorola officers, employees, subsidiaries, affiliates, distributors harmless against claims, costs, damages, expenses, reasonable attorney fees arising directly indirectly, claim personal injury death associated with such unintended unauthorized use, even such claim alleges that Motorola negligent regarding design manufacture part. Motorola registered trademarks Motorola, Inc. Motorola, Inc. Equal Opportunity/Affirmative Action Employer.
reach EUROPE: Motorola Literature Distribution; P.O. 20912; Phoenix, Arizona 85036. 1-800-441-2447 MFAX: RMFAX0@email.sps.mot.com TOUCHTONE (602) 244-6609 INTERNET: http://Design-NET.com
JAPAN: Nippon Motorola Ltd.; Tatsumi-SPD-JLDC, Toshikatsu Otsuki, Seibu-Butsuryu-Center, 3-14-2 Tatsumi Koto-Ku, Tokyo 135, Japan. 03-3521-8315 HONG KONG: Motorola Semiconductors H.K. Ltd.; Ping Industrial Park, Ting Road, N.T., Hong Kong. 852-26629298
3-236
Motorola Bipolar Power Transistor Device Data
*BU323A/D*
BU323A/D

Silicon Power Darlington Transistor SEMICONDUCTOR TECHNICAL DATA

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