5.029 CPU165MU IGBT MODULE Features Fully isolated

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5.029 CPU165MU IGBT MODULE Features Fully isolated

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5.029
CPU165MU
IGBT MODULE
Features
Fully isolated printed circuit board mount package Switching-loss rating includes "tail" losses HEXFRED soft ultrafast diodes Optimized high operating frequency (over 5kHz) Fig. Current Frequency curve
Ultra-Fast IGBT
Product Summary
Output Current Typical Motor Drive ARMS with 90°C, 125°C, Supply Voltage 360Vdc, Power Factor 0.8, Modulation Depth (See Figure
11,12
Description
IGBT technology International Rectifier's advanced line (Insulated Metal Substrate) Power Modules. These modules more efficient than comparable bipolar transistor modules, while same time having simpler gate-drive requirements familiar power MOSFET. This superior technology been coupled state materials system that maximizes power throughput with thermal resistance. This package highly suited motor drive applications where space premium.
IMS-1
Absolute Maximum Ratings
Parameter
VCES 25°C 100°C 100°C VISOL 25°C 100°C TSTG Collector-to-Emitter Voltage Continuous Collector Current, each IGBT Continuous Collector Current, each IGBT Pulsed Collector Current Clamped Inductive Load Current Diode Continuous Forward Current Diode Maximum Forward Current Gate-to-Emitter Voltage Isolation Voltage, terminal case, minute Maximum Power Dissipation, each IGBT Maximum Power Dissipation, each IGBT Operating Junction Storage Temperature Range Soldering Temperature, sec. Mounting torque, 6-32 screw.
Max.
2500 +150 (0.063 (1.6mm) from case) (0.55-0.8
Units
VRMS
Thermal Resistance
Parameter
(IGBT) (DIODE) (MODULE) Junction-to-Case, each IGBT, IGBT conduction Junction-to-Case, each diode, diode conduction Case-to-Sink,flat,greased surface Weight module
Typ.
(0.7)
Max.
Units
°C/W (oz)
Revision
C-733
Order
CPU165MU
Electrical Characteristics 25°C (unless otherwise specified)
V(BR)CES
V(BR)CES/TJ
VCE(on)
Parameter Collector-to-Emitter Breakdown Voltage Temperature Coeff. Breakdown Voltage Collector-to-Emitter Saturation Voltage
VGE(th) VGE(th)/TJ ICES IGES
Gate Threshold Voltage Temperature Coeff. Threshold Voltage Forward Transconductance Zero Gate Voltage Collector Current Diode Forward Voltage Drop Gate-to-Emitter Leakage Current
Min. Typ. Max. Units Conditions 250µA 0.60 V/°C 1.0mA Fig. 17A, 150°C VGE, 250µA mV/°C VGE, 250µA 100V, 600V 6500 600V, 150°C Fig. 25A, 150°C ±500 ±20V
Switching Characteristics 25°C (unless otherwise specified)
td(on) td(off) Eoff td(on) td(off) Cies Coes Cres di(rec)M/dt Parameter Total Gate Charge (turn-on) Gate Emitter Charge (turn-on) Gate Collector Charge (turn-on) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Switching Loss Input Capacitance Output Capacitance Reverse Transfer Capacitance Diode Reverse Recovery Time Diode Peak Reverse Recovery Current Diode Reverse Recovery Charge Diode Peak Rate Fall Recovery During Min. Typ. 0.76 0.26 2900 Max. Units Conditions 400V Fig. 25°C 27A, 480V 15V, Energy losses include "tail" diode reverse recovery. Fig. 150°C, Fig. 27A, 480V 15V, Energy losses include "tail" diode reverse recovery. Fig. 1.0MHz 25°C Fig. 125°C 25°C Fig. 125°C 200V 25°C Fig. 1200 125°C di/dt 200A/µs A/µs 25°C Fig. 125°C
Notes: Repetitive rating; GE=20V, pulse width limited max. junction temperature. fig. VCC=80%(V CES), VGE=20V, L=10µH, 5.0, fig. Pulse width 80µs; duty factor 0.1%. Pulse width 5.0µs, single shot.
C-734
Order
CPU165MU
Total utpu
urrent
90°C 125°C Power Factor Modulation Depth Rated Voltage
quency
Fig. Current Output Power, Synthesized Sine Wave
1000
1000
Collector-to-Emitter Current
Collector-to-E itter urrent
150°C 25°C
100V PULSE WIDTH
llector-to-Em itter oltage
VGE, Gate-to-Emitter Voltage
Fig. Typical Output Characteristics
Fig. Typical Transfer Characteristics
C-735
Order
CPU165MU
ctor-to-E itter oltage
aximum Collector Current
perature
perature
Fig. Maximum Collector Current Case Temperature
Fig. Collector-to-Emitter Voltage Case Temperature
herm Response
0.01 0.00001
0.0001
0.001
0.01
ectangular Pulse uration (sec)
Fig. Maximum IGBT Effective Transient Thermal Impedance, Junction-to-Case
C-736
Order
CPU165MU
7000
6000
apacitance
5000
4000
Cies
3000
ate-to-E itter oltage
1MHz SHORTED
2000
Coes
1000
Cres
ollector-to-E itter oltage
Total harge
Fig. Typical Capacitance Collector-to-Emitter Voltage
Fig. Typical Gate Charge Gate-to-Emitter Voltage
hing
Total itching Losses
esistance
perature
Fig. Typical Switching Losses Gate Resistance
Fig. Typical Switching Losses Case Temperature
C-737
Order
CPU165MU
Total itching Losses
ollec tor-to itter
150°C
1000
1000
ollecto r-to-E itter urrent
r-to-E itte olta
Fig. Typical Switching Losses Collector-to-Emitter Current
Fig. Turn-Off
Instantaneous Forward Current
150°C 125°C
25°C
Forward Voltage Drop
Fig. Maximum Forward Voltage Drop Instantaneous Forward Current
C-738
Order
CPU165MU
200V 125°C 25°C
200V 125°C 25°C
IRRM
(ns)
(A/µs)
1000
(A/µs)
1000
Fig. Typical Reverse Recovery dif/dt
Fig. Typical Recovery Current dif/dt
1500
10000
200V 125°C 25°C
1200
200V 125°C 25°C
di(rec)M/dt (A/µs)
(nC)
1000
1000
(A/µs)
(A/µs)
1000
Fig. Typical Stored Charge dif/dt C-739
Fig. Typical di(rec)M/dt dif/dt
Order
CPU165MU
+Vge Same type device D.U.T.
430µF D.U.T.
td(off)
Eoff
t1+5µS
Fig.18a Test Circuit Measurement ILM, Eon, Eoff(diode) trr, Qrr, Irr, td(on), td(off),
Fig. Test Waveforms Circuit Fig. 18a, Defining
Eoff, td(off),
GATE VOLTAGE D.U.T. VOLTAGE CURRENT DIODE RECOVERY WAVEFORMS td(on) DIODE REVERSE RECOVERY ENERGY
Erec
Fig. Test Waveforms Circuit Fig. 18a,
Defining td(on),
Fig. Test Waveforms Circuit Fig. 18a,
Defining rec, trr, Qrr,
Refer Section following: Appendix Section page Fig. Macro Waveforms Test Circuit Fig. Fig. Clamped Inductive Load Test Circuit Fig. Pulsed Collector Current Test Circuit Package Outline IMS-1 Package pins)
C-740
Section page D-13
Order

5.029 CPU165MU IGBT MODULE Features Fully isolated

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