REFRACTORY/GOLD METALLIZATION EMITTER SITE BALLASTED VSWR CAPABILITY T

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REFRACTORY/GOLD METALLIZATION EMITTER SITE BALLASTED VSWR CAPABILITY T

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AM1214-300
REFRACTORY/GOLD METALLIZATION EMITTER SITE BALLASTED VSWR CAPABILITY THERMAL RESISTANCE INPUT/OUTPUT MATCHING OVERLAY GEOMETRY METAL/CERAMIC HERMETIC PACKAGE POUT MIN. WITH GAIN
.400 .500 2LFL (S038) hermetically sealed ORDER CODE AM1214-300 BRANDING 1214-300
DESCRIPTION AM1214-300 device high power transistor specifically designed L-Band radar pulsed output driver applications. This device designed operation under moderate pulse width duty cycle pulse conditions capable withstanding output VSWR rated conditions. thermal resistance computerized automatic wire bonding techniques ensure high reliability product consistency. AM1214-300 supplied BIGPACHermetic etal/Ceramic package with nternal Input/Output matching structures. ABSOLUTE MAXIMUM RATINGS case
Symbol Parameter
CONNECTION
Collector Base
Emitter Base
Value
Unit
PDISS
Power Dissipation* Device Current*
100°C)
18.75 +200
Collector-Supply Voltage* Junction Temperature (Pulsed Operation) Storage Temperature
THERMAL DATA RTH(j-c) Junction-Case Thermal Resistance* 0.24 °C/W
*Applies only rated amplifier operation
September 1992
AM1214-300
ELECTRICAL SPECIFICATIONS case STATIC
Symbol Test Conditions Valu Min. Typ. Max. Unit
BVCBO BVEBO BVCES ICES
50mA 15mA 50mA
DYNAMIC
Symbol Test Conditions Value Min. Typ. Max. Unit
POUT
Note:
1235 1365MHz 1235 1365MHz 1235 1365MHz
Widt Duty Cycle
AM1214-300
TYPICAL PERFORMANCE
TYPICAL BROADBAND POWER AMPLIFIER
RELATIVE POWER OUTPUT COLLECTOR EFFICIENCY COLLECTOR VOLTAGE
MAXIMUM THERMAL RESISTANCE PULSE WIDTH PULSE CYCLE
AM1214-300
IMPEDANCE DATA
TYPICAL INPUT IMPEDANCE
ohms
FREQ. 1235 1300 1365
TYPICAL COLLECTOR LOAD IMPEDANCE
ohms
*Normalized Impedance
AM1214-300
TEST CIRCUIT Ref.: Dwg. C125510
PACKAGE MECHANICAL DATA
AM1214-300
Information furnished believed accurate reliable. However, SGS-THOMSON Microelectronics assumes responsability consequences such information infringement patents other rights third parties which results from use. license granted implication otherwise under patent patent rights SGS-THOMSON Microelectronics. Specifications mentioned this publication subject change without notice. This publication supersedes replaces information previously supplied. SGS-THOMSON Microelectronics products authorized ascritical components life support devices systems without express written approval SGS-THOMSON Microelectonics. 1994 SGS-THOMSON Microelectronics Rights Reserved SGS-THOMSON Microelectronics GROUP COMPANIES Australia Brazil France Germany Hong Kong Italy Japan Korea Malaysia Malta Morocco Netherlands Singapore Spain Sweden Switzerland Taiwan Thailand United Kingdom U.S.A

REFRACTORY/GOLD METALLIZATION EMITTER SITE BALLASTED VSWR CAPABILITY T

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