Silicon epitaxial planer transistor 2.1±0.1 0.425 1.25±0.1 0.425

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Silicon epitaxial planer transistor 2.1±0.1 0.425 1.25±0.1 0.425

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XP2401
Silicon epitaxial planer transistor
2.1±0.1 0.425 1.25±0.1 0.425
0.2±0.05 0.12 0.02
+0.05
general amplification
0.65
Features
elements incorporated into package. (Base-coupled transistors) Reduction mounting area assembly cost half.
2.0±0.1
0.65
0.9±
2SB709A elements
0.7±0.1
Basic Part Number Element
0.2±0.1
Absolute Maximum Ratings
Parameter Collector base voltage Collector emitter voltage Rating Emitter base voltage element Collector current Peak collector current Total power dissipation Overall Junction temperature Storage temperature Symbol VCBO VCEO VEBO Tstg
(Ta=25°C)
Ratings -100 -200 +150 Unit
Emitter (Tr1) Base Emitter (Tr2)
Collector (Tr2) Collector (Tr1) EIAJ SC-88A S-Mini Type Package (5-pin)
Marking Symbol: Internal Connection
Electrical Characteristics
Parameter Collector base voltage Collector emitter voltage Emitter base voltage Collector cutoff current Forward current transfer ratio Forward current transfer ratio Collector emitter saturation voltage Transition frequency Collector output capacitance
(Ta=25°C)
Symbol VCBO VCEO VEBO ICBO ICEO (small/large)*1 VCE(sat) Conditions -10µA, -2mA, -10µA, -20V, -10V, -10V, -2mA -10V, -2mA -100mA, -10mA -10V, 1mA, 200MHz -10V, 1MHz 0.99 -100 Unit
Ratio between elements
Ta=25°C IB=-300µA
XP2401
VCE= Ta=25°C
Total power dissipation (mW)
Collector current (mA)
-250µA -200µA
Collector current (mA)
-150µA
-100µA
-50µA
-100 -200 -300 -400
Ambient temperature (°C)
Collector emitter voltage
Base current (µA)
-400 -350 VCE= Ta=25°C -200 -240
VCE(sat)
Collector emitter saturation voltage VCE(sat)
VCE=-5V IC/IB=10
25°C Ta=75°C -25°C
-0.3 -0.1 -0.03 -0.01 25°C Ta=75°C
Base current (µA)
-300 -250 -200 -150 -100 -0.4 -0.8 -1.2 -1.6
Collector current (mA)
-160
-25°C
-120
-0.003 -0.001
-0.4 -0.8 -1.2 -1.6 -2.0
-100 -300 -1000
Base emitter voltage
Base emitter voltage
Collector current (mA)
VCE= -10V VCB=-10V Ta=25°C
Collector output capacitance (pF)
f=1MHz IE=0 Ta=25°C
Forward current transfer ratio
Transition frequency (MHz)
Ta=75°C 25°C -25°C
-100 -300 -1000
-100
Collector current (mA)
Emitter current (mA)
Collector base voltage
VCB=-5V f=1kHz Rg=2k Ta=25°C
VCB=-5V Rg=50k Ta=25°C
XP2401
Parameter
Noise figure (dB)
Noise figure (dB)
Parameter
VCE=-5V f=270Hz Ta=25°C (µS)
f=100Hz
1kHz 10kHz
0.01 0.03
Emitter current (mA)
Emitter current (mA)
Emitter current (mA)
Parameter
IE=2mA f=270Hz Ta=25°C
Parameter
(µS)
-100
Collector emitter voltage

Silicon epitaxial planer transistor 2.1±0.1 0.425 1.25±0.1 0.425

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