Silicon epitaxial planer transistor 2.1±0.1 0.425 1.25±0.1 0.425
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Top Searches for this datasheet
XP111H
Silicon epitaxial planer transistor
2.1±0.1 0.425 1.25±0.1 0.425
0.2±0.05 0.12 0.02
+0.05
switching/digital circuits
0.65
Features
elements incorporated into package. (Emitter-coupled transistors with built-in resistor) Reduction mounting area assembly cost half.
2.0±0.1
0.65
0.9±
UN111H elements
0.7±0.1
Basic Part Number Element
0.2±0.1
Absolute Maximum Ratings
Parameter Collector base voltage Rating Collector emitter voltage element Collector current Total power dissipation Overall Junction temperature Storage temperature Symbol VCBO VCEO Tstg
(Ta=25°C)
Ratings -100 +150 Unit
Base (Tr1) Emitter Base (Tr2)
Collector (Tr2) Collector (Tr1) EIAJ SC-88A S-Mini Type Package (5-pin)
Marking Symbol: Internal Connection
Electrical Characteristics
Parameter Collector base voltage Collector emitter voltage Collector cutoff current Emitter cutoff current Forward current transfer ratio Forward current transfer ratio Collector emitter saturation voltage Output voltage high level Output voltage level Transition frequency Input resistance Resistance ratio
(Ta=25°C)
Symbol VCBO VCEO ICBO ICEO IEBO (small/large)*1 VCE(sat) R1/R2 Conditions -10µA, -2mA, -50V, -50V, -6V, -10V, -5mA -10V, -5mA -10mA, 0.3mA -5V, 0.5V, -5V, -2.5V, -10V, 1mA, 200MHz -30% 0.17 0.22 +30% 0.27 -4.9 0.99 0.25 Unit
Ratio between elements
XP111H
Total power dissipation (mW)
Ambient temperature (°C)
-120 -100
VCE(sat)
Collector emitter saturation voltage VCE(sat)
Ta=25°C IC/IB=10
VCE=-10V
-100
Forward current transfer ratio
Collector current (mA)
IB=-0.5mA -0.4mA
Ta=75°C 25°C -25°C
-0.3mA -0.2mA -0.1mA
Ta=75°C 25°C -0.1 -25°C
-0.01
-100 -300 -1000
-0.1 -0.3
-100
Collector emitter voltage
Collector current
(mA)
Collector current (mA)
f=1MHz IE=0 Ta=25°C
-100
Collector output capacitance (pF)
VO=-0.2V Ta=25°C
Input voltage
-0.1
-100
-0.01 -0.1 -0.3
-100
Collector base voltage
Output current (mA)
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