Silicon epitaxial planer transistor 2.1±0.1 0.425 1.25±0.1 0.425
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XP1E554
Silicon epitaxial planer transistor
2.1±0.1 0.425 1.25±0.1 0.425
0.65
0.9±
Basic Part Number Element
0.7±0.1
0.12 0.02
0.2±0.1
2SC3757 elements
Base (Tr1) Emitter (Tr1) Collector (Tr2)
Absolute Maximum Ratings
Parameter Collector base voltage Rating Emitter base voltage element Collector current Collector emitter voltage Symbol VCBO VCES VEBO Tstg
(Ta=25°C)
Ratings +150 Unit
Base (Tr2) Emitter (Tr2) Collector (Tr1) EIAJ SC-88A S-Mini Type Package (5-pin)
Marking Symbol: Internal Connection
Peak collector current Total power dissipation Overall Junction temperature Storage temperature
Electrical Characteristics
Parameter Collector cutoff current Emitter cutoff current Forward current transfer ratio Collector emitter saturation voltage Base emitter saturation voltage Transition frequency Collector output capacitance Turn-on time Turn-off time Storage time
(Ta=25°C)
Symbol ICBO IEBO VCE(sat) VBE(sat) toff tstg Conditions 15V, 10mA 10mA, 10mA, 10V, -10mA, 200MHz 10V, 1MHz 0.17 0.25 Unit
+0.05
elements incorporated into package. (Tr1 emitter connected collecter.) Reduction mounting area assembly cost half. VCE(sat).
2.0±0.1
Features
0.65
0.2±0.05
high speed switching
ton, toff Test Circuit
0.1µF Vout Vin=10V 3.3k 3.3k Vbb=
Vin=10V Vbb=2V VCC=10V
XP1E554
tstg Test Circuit
0.1µF 0.1µF Vout
Total power dissipation (mW)
VCC=3V
Vout
Vout
tstg (Wave form
Vout
toff
Ambient temperature (°C)
VCE(sat)
Collector emitter saturation voltage VCE(sat)
Ta=25°C IC/IB=10
VBE(sat)
IC/IB=10
Base emitter saturation voltage VBE(sat)
Ta=75°C 0.03 0.01 25°C -25°C
0.03 0.01 Ta=-25°C 25°C 75°C
Collector current (mA)
IB=3.0mA 2.5mA
2.0mA 1.5mA
1.0mA 0.5mA
1000
Collector emitter voltage
Collector current (mA)
Collector current (mA)
VCE=1V
Collector output capacitance (pF)
VCB=10V Ta=25°C f=1MHz IE=0 Ta=25°C
Forward current transfer ratio
Transition frequency (MHz)
Ta=75°C 25°C -25°C
-100 -300 -1000
Collector current
(mA)
Emitter current
(mA)
Collector base voltage
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