2.1±0.1 0.425 1.25±0.1 0.425 0.2±0.05 0.12 0.02 +0.05 a
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Top Searches for this datasheet
XP1D873
2.1±0.1 0.425 1.25±0.1 0.425
0.2±0.05 0.12 0.02
+0.05
analog switching
0.65
Features
0.9±
Basic Part Number Element
2SK1103 elements
Source (FET1) Drain (FET1, Source (FET2)
0.7±0.1
elements incorporated into package. (Drain-coupled FETs) Reduction mounting area assembly cost half. Low-frequency low-noise J-FET.
2.0±0.1
0.65
0.2±0.1
Absolute Maximum Ratings
Parameter Gate drain voltage Rating Drain current element Gate current Total power dissipation Overall Channel temperature Storage temperature Symbol VGDS Tstg
(Ta=25°C)
Ratings +150 Unit
Gate (FET2) Gate (FET1) EIAJ SC-88A S-Mini Type Package (5-pin)
Marking Symbol: Internal Connection
Electrical Characteristics
Parameter Drain voltage Drain current Gate cutoff current Gate source cutoff voltage Mutual conductance Drain resistance Common source short-circuit input capacitance Common source reverse transfer capacitance Common source short-circuit output capacitance
(Ta=25°C)
Symbol VGDS IDSS IGSS VGSC RDS(on) Ciss Crss Coss Conditions -10µA, 10V, -30V, 10V, 10µA 10V, 1mA, 1kHz 10mV, 10V, 1MHz 10V, 1MHz 10V, 1MHz -1.5 -3.5 Unit
Ta=25°C
XP1D873
Total power dissipation (mW)
VGS=0V
Drain current (mA)
Drain current (mA)
Ta=-25°C 25°C
-0.1V -0.2V -0.3V -0.4V
75°C
-1.2
-1.0
-0.8 -0.6 -0.4 -0.2
Ambient temperature (°C)
Drain source voltage
Gate source voltage
Common source short-circuit input capacitance, Common source reverse transfer capacitance, Ciss, Crss, Coss (pF) Common source short-circuit output capacitance
Forward transfer admittance |Yfs| (mS)
VDS=10V Ta=25°C VDS=10V Ta=25°C
Ciss, Crss, Coss
VGS=0 f=1MHz Ta=25°C
Forward transfer admittance |Yfs| (mS)
IDSS=10mA
IDSS=10mA
Ciss
Coss Crss
-1.6
-1.2 -0.8 -0.4
Gate source voltage
Drain current (mA)
Drain source voltage
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