HIGH POWER GAIN: OUTPUT POWER compression): NOISE/HIGH GAIN: TYP, GATE
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BAND N-CHANNEL GaAs NE722S01
HIGH POWER GAIN: OUTPUT POWER compression): NOISE/HIGH GAIN: TYP, GATE LENGTH: (recessed gate) GATE WIDTH:
OUTLINE DIMENSION
(Units
PACKAGE OUTLINE
DESCRIPTION
NE722S01 cost GaAs MESFET suitable both amplifier oscillator applications through X-band. device features micron recessed gate, triple epitaxial technology fabricated using implantation improved performance uniformity. This device's phase noise high makes excellent choice oscillator applications digital (Low Noise Block). NE722S01 housed cost plastic package which available Tape Reel. NEC's stringent quality assurance test procedures ensure highest reliability performance.
0.125 0.05
0.65
2.0-0.
Source Drain Source Gate
APPLICATIONS
band noise amplifiers band oscillators
ELECTRICAL CHARACTERISTICS
25°C)
PART NUMBER PACKAGE OUTLINE
SYMBOLS IGSO IDSS P1dB PARAMETERS CONDITIONS Gate Source Leak Current, Saturated Drain Current, Gate Source Cutoff Voltage, Transconductance, Power Gain, Output Power Gain Compression Point Noise Figure, Associated Gain, UNITS -0.5
NE722S01
15.0 -4.0
California Eastern Laboratories
NE722S01 ABSOLUTE MAXIMUM RATINGS1 25°C)
SYMBOLS TSTG PARAMETERS Drain Source Voltage Gate Source Voltage Gate Drain Voltage Drain Current Total Power Dissipation Input Power Channel Temperature Storage Temperature UNITS RATINGS -5.0 -6.0 IDSS +125
RECOMMENDED OPERATING CONDITIONS 25°C)
PART NUMBER SYMBOLS PARAMETERS Drain Source Voltage Drain Current NE722S01 UNITS
ORDERING INFORMATION
PART NUMBER NE722S01-T1 NE722S01-T1B1 Note: Available quantity over 100k month SUPPLY FORM Tape Reel 1000 pcs/reel Tape Reel 4000 pcs/reel MARKING
Note: Operation excess these parameters result permanent damage.
TYPICAL PERFORMANCE CURVES
TOTAL POWER DISSIPATION AMBIENT TEMPERATURE
25°C) DRAIN CURRENT DRAIN SOURCE VOLTAGE
Total Power Dissipation, (PT)
Drain Current, (mA)
-0.5
-1.0
-2.0
Ambient Temperature, (°C)
Drain Source Voltage,
DRAIN CURRENT GATE SOURCE VOLTAGE
MAXIMUM AVAILABLE GAIN, FORWARD INSERTION GAIN FREQUENCY
Maximum Stable Gain, (dB) Maximum Available Gain, (dB) Forward Insertion Gain, |S21S|2 (dB)
MSG.
Drain Current, (mA)
|S21S|
MAG.
|S21| |S12| When undefined values used. |S21| |S11| |S22| |S12| |S12 S21|
-4.0 -2.0
Gate Source Voltage,
Frequency, (GHz)
Note: Gain Calculation:
|S21| |S12|
When undefined values used.
|S21| |S11| |S22| |S12| |S12 S21|
Maximum Available Gain Maximum Stable Gain
NE722S01 TYPICAL PERFORMANCE CURVES
OUTPUT POWER INPUT POWER
25°C)
Output Power, Pout (dBm)
Input Power, (dBm)
NE722S01 TYPICAL SCATTERING PARAMETERS 25°C)
NE722S01
FREQUENCY 10.0 10.5 11.0 11.5 12.0 12.5 13.0 13.5 14.0 14.5 15.0 15.5 16.0 16.5 17.0 17.5 18.0 0.912 0.876 0.828 0.784 0.737 0.699 0.660 0.620 0.583 0.547 0.516 0.496 0.500 0.510 0.526 0.540 0.553 0.566 0.576 0.592 0.608 0.640 0.665 0.693 0.718 0.744 0.759 0.756 0.750 0.738 0.728 0.721 0.721 -44.0 -56.1 -68.0 -79.3 -89.5 -99.3 -109.0 -119.0 -130.6 -143.8 -158.5 -173.7 172.6 159.9 148.4 138.4 129.9 120.6 111.3 101.8 92.8 85.2 79.1 73.3 69.3 64.8 59.6 55.5 51.0 45.4 40.9 36.4 32.5 3.100 3.037 2.935 2.819 2.696 2.589 2.499 2.420 2.355 2.283 2.196 2.098 2.016 1.920 1.834 1.749 1.676 1.608 1.542 1.470 1.401 1.325 1.256 1.183 1.111 1.045 0.966 0.893 0.839 0.777 0.714 0.676 0.624 136.2 124.9 113.9 103.7 94.2 85.3 76.6 67.9 59.4 50.1 41.0 32.2 23.7 15.3 -0.6 -7.9 -15.8 -23.5 -31.1 -38.4 -45.7 -52.7 -59.7 -66.4 -73.3 -79.7 -85.4 -91.0 -96.7 -101.5 -105.7 -109.8 0.077 0.091 0.105 0.115 0.124 0.130 0.136 0.140 0.146 0.148 0.151 0.149 0.152 0.150 0.151 0.151 0.152 0.156 0.157 0.157 0.158 0.159 0.160 0.158 0.162 0.163 0.159 0.159 0.160 0.158 0.158 0.156 0.158 59.0 51.2 42.9 36.2 30.0 24.7 19.1 14.1 -1.6 -6.6 -10.1 -13.6 -17.3 -20.3 -23.2 -26.3 -29.8 -32.9 -35.7 -38.0 -41.3 -44.5 -47.0 -49.5 -53.4 -55.8 -57.6 -61.4 -63.1 -65.9 -68.4 0.659 0.629 0.597 0.570 0.546 0.529 0.514 0.495 0.475 0.447 0.408 0.366 0.331 0.298 0.274 0.265 0.275 0.297 0.312 0.328 0.340 0.339 0.341 0.356 0.386 0.421 0.474 0.516 0.563 0.601 0.624 0.628 0.625 -30.2 -38.0 -46.4 -53.5 -60.9 -67.2 -73.6 -79.6 -85.2 -91.5 -97.0 -103.7 -110.8 -120.4 -133.2 -147.9 -160.7 -172.7 178.5 171.0 163.5 155.6 145.5 133.8 122.3 111.6 104.4 98.7 95.8 92.8 89.4 86.9
Note: Gain Calculation:
|S21| |S12|
When undefined values used.
|S21| |S11| |S22| |S12| |S12 S21|
Maximum Available Gain Maximum Stable Gain
NE722S01 TYPICAL SCATTERING PARAMETERS 25°C)
NE722S01
FREQUENCY 10.0 10.5 11.0 11.5 12.0 12.5 13.0 13.5 14.0 14.5 15.0 15.5 16.0 16.5 17.0 17.5 18.0 0.896 0.851 0.799 0.753 0.705 0.666 0.625 0.586 0.553 0.521 0.497 0.489 0.501 0.519 0.540 0.562 0.575 0.589 0.602 0.619 0.633 0.666 0.690 0.715 0.740 0.769 0.780 0.778 0.774 0.759 0.750 0.739 0.741 -48.3 -61.5 -74.1 -86.1 -97.0 -107.3 -117.5 -128.3 -140.6 -154.2 -169.4 175.8 162.9 151.0 140.4 131.2 123.2 114.3 105.5 96.4 88.0 80.9 75.2 70.0 66.4 62.0 57.0 52.5 48.2 42.7 38.1 33.9 30.2 3.721 3.606 3.449 3.275 3.102 2.957 2.834 2.724 2.627 2.522 2.402 2.281 2.176 2.062 1.963 1.865 1.786 1.709 1.637 1.554 1.480 1.400 1.321 1.241 1.169 1.101 1.021 0.945 0.888 0.824 0.767 0.721 0.672 134.0 122.4 111.3 101.1 91.6 82.7 74.0 65.3 56.8 47.7 39.0 30.5 22.5 14.5 -0.7 -7.8 -15.4 -22.9 -30.2 -37.4 -44.5 -51.1 -57.9 -64.2 -70.8 -77.1 -82.6 -88.0 -93.4 -98.3 -102.3 -106.6 0.063 0.077 0.086 0.095 0.102 0.106 0.111 0.115 0.122 0.125 0.128 0.128 0.131 0.135 0.139 0.142 0.146 0.151 0.156 0.161 0.163 0.168 0.171 0.173 0.173 0.174 0.178 0.175 0.176 0.176 0.174 0.175 0.176 59.9 53.2 45.1 39.6 34.1 29.5 24.9 20.6 17.0 12.6 -1.2 -3.4 -6.8 -9.9 -12.8 -16.7 -20.5 -23.9 -27.4 -30.5 -33.9 -37.3 -41.0 -45.3 -48.6 -51.4 -56.1 -58.3 -61.1 -63.3 0.547 0.519 0.489 0.464 0.443 0.431 0.419 0.406 0.390 0.366 0.334 0.296 0.267 0.234 0.209 0.206 0.221 0.246 0.265 0.285 0.299 0.303 0.307 0.326 0.358 0.396 0.450 0.494 0.540 0.578 0.601 0.604 0.599 -29.6 -37.4 -45.4 -52.6 -59.5 -65.5 -71.5 -76.9 -82.2 -88.2 -93.4 -99.7 -106.8 -117.8 -132.7 -150.0 -164.3 -177.2 173.7 166.1 158.1 149.9 139.1 127.4 116.2 106.2 99.5 94.8 92.0 89.4 86.3 84.0
Note: Gain Calculation:
|S21| |S12|
When undefined values used.
|S21| |S11| |S22| |S12| |S12 S21|
Maximum Available Gain Maximum Stable Gain
NE722S01 NONLINEAR MODEL SCHEMATIC
CGD_PKG 0.001pF DRAIN GATE ohms 0.71nH 0.13nH 0.01 ohms 0.5nH ohms
CGS_PKG 0.08pF
CDS_PKG 0.1PF
SOURCE
NONLINEAR MODEL PARAMETERS
Parameters VTOSC ALPHA BETA TQGAMMA TQGAMMAAC TQDELTA DELTA1 DELTA2 Model simulate phase noise using AF/KF: 2e-10 -2.24 0.055 0.04 0.05 0.25 1e-14 3e-12 0.19e-12 1e-9 0.92e-12 0.05e-12 Infinity Parameters RGMET TNOM VTOTC BETATCE FNC(2) 1.43 150e-6
UNITS
Parameter time capacitance inductance resistance voltage current Units seconds farads henries ohms volts amps
MODEL RANGE Frequency: Bias: Date: 02/200
Life Support Applications These products intended life support devices, appliances, systems where malfunction these products reasonably expected result personal injury. customers using selling these products such applications their risk agree fully indemnify damages resulting from such improper sale.
EXCLUSIVE NORTH AMERICAN AGENT MICROWAVE OPTOELECTRONIC SEMICONDUCTORS
CALIFORNIA EASTERN LABORATORIES Headquarters 4590 Patrick Henry Drive Santa Clara, 95054-1817 (408) 988-3500 Telex 34-6393 (408) 988-0279 Internet: http://WWW.CEL.COM DATA SUBJECT CHANGE WITHOUT NOTICE 02/13/200
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