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GM76C8128CL/CLL 131,072 WORDS CMOS STATIC Configuration
Top Searches for this datasheetGM76C8128CL/CLL 1,048,576 bits static random access memory organized 131,072 words bits. Using 0.6um advanced CMOS technology provides high speed operation with minimum cycle time 55/70/85ns. device placed power standby mode with /CS1 high output enable (/OE) allows fast memory access. Thus suitable high speed power applications, especially where battery back-up required. GM76C8128CL/CLL 131,072 WORDS CMOS STATIC Configuration I/O0 I/O1 I/O2 /CS1 I/O7 I/O6 I/O5 I/O4 I/O3 Features Fast Speed 55/70/85ns Power Standby Power Operation Standby 0.275mW Max. 85C(LLE/LLI) 0.55mW Max. 85C(LE/LI) 0.11mW Max. 70C(LL) 0.55mW Max. 70C(L) Operation 385mW (Max) Completely Static Clock Timing Strobe Required Equal Access Cycle Time compatible inputs outputs Capability Battery Back-up Operation Single 5V+/-10% Operation Standard DIP, TSOP-I,STSOP-I Temperature Range GM76C8128C Extended (-25 85C) GM76C8128C-E Industrial (-40 85C) GM76C8128C-I (Top View) Block Diagram Address Buffer 1024 Decoder MEMORY CELL ARRAY 1024 (128K A0-A16 /CS1, I/O0-I/O7 Function Address Inputs Write Enable Input Chip Select Input Output Enable Input Data Inputs/Outputs /CS1 Decorder Column Select /CS1, Chip Control /OE, Chip Control Power Supply (4.5V ~5.5V) Ground Buffer I/O0 I/O1 I/O2 I/O3 I/O4 I/O5 I/O6 I/O7 Connection GM76C8128CL/CLL Absolute Maximum Ratings* Symbol Parameter GM76C8128C Ambient Temperature under Bias Rating 260, lead) -0.3 -0.3 -0.5 Unit GM76C8128C-E GM76C8128C-I TSTG TSOL VI/O Storage Temperature Soldering Temperature Time Supply Voltage Input Voltage Input Output Voltage Power Dissipation Stresses greater than those listed under "Absolute Maximum Ratings" cause permanent damage device. This stress rating only functional operation device these other conditions above those indicated operating sections this specification implied. Exposure absolute maximum rating conditions extended periods affect reliability. Recommended Operating Conditions 85C) Symbol Parameter Supply Voltage Input High Voltage Input Voltage -0.3* Unit *Note :VIL(min) -3.0V 10ns pulse Truth Table /CS1 Stable Stable Stable DATA Output Data Input Data Hi-Z Hi-Z Hi-Z MODE Read Write Output Disable Standby *Note: means don't care Capacitance 1MHZ, 25C) Symbol CI/O Parameter Input Capacitance Output Capacitance Test Conditions Unit *Note: This parameter sampled 100% tested. GM76C8128CL/CLL Operating Characteristics (VCC 5V+/-10%, 85C) Symbol Parameter Input Leakage Current Output Leakage Current High Level Output Voltage Level Output Voltage Operating Supply Current Conditions /CS1 VIH, <=VOUT<=VCC -1.0mA 2.1mA /CS1 VIH/VIL, IOUT /CS1 VIH/VIL IOUT tcycle Min, cycle *Typ Unit II(L) IO(L) ICC1 Average Operating Current ICC2 /CS1 0.2V, VCC-0.2V 0.2V/0.2V IOUT tcycle Standby Current(TTL) Standby GM76C8128C Current(CMOS) GM76C8128C-E GM76C8128C-I /CS1 VIH, Version /CS1 VCC-0.2V Version 0.2V Version Version ICCS1 ICCS2 *Typ. Values measured Operating Characteristics Test Conditions (VCC 5V+/-10%, 85C, unless otherwise noted.) Parameter Input Pulse Level Input Rise Fall Time Input Output Timing Reference Levels Output Load Value 0.6V 2.4V 1.5V below Output Load DOUT Output Load (for tCHZ, tCLZ, tWHZ, tOW, tOLZ tOHZ) DOUT GM76C8128CL/CLL Operating Characteristics (VCC 5V+/-10%, 85C) Read Cycle GM76C8128C-55 GM76C8128C-70 GM76C8128C-85 Symbol Parameter Read Cycle Time Address Access Time Chip Select Access Time Chip Select Access Time Output Enable Access Time Chip Select Output Setup Time Chip Select Output Floating Chip Select Output Setup Time Chip Select Output Floating Output Enable Output Setup Time Output Enable Output Floating Output Hold Time Unit tACS1 tACS2 tCLZ1 tCHZ1 tCLZ2 tCHZ2 tOLZ tOHZ Write Cycle GM76C8128C-55 GM76C8128C-70 GM76C8128C-85 Symbol Parameter Write Cycle Time Chip Select Time Chip Select Time Address Enable Time Address Setup Time Write Pulse Width Address Hold Time Input Data Setup Time Input Data Hold Time Write Output High-Z Output Active from Write Unit tCW1 tCW2 tWHZ GM76C8128CL/CLL Timing Waveforms Read Cycle (Note tACS1 /CS1 tCLZ1 tACS2 tCHZ1 tCLZ2 tOLZ tCHZ2 tOHZ DOUT High-Z VALID DATA GM76C8128CL/CLL Write Cycle (/WE Controlled) (Notes tCW1 /CS1 tCW2 tWHZ DOUT VALID DATA GM76C8128CL/CLL Write Cycle (/CS1 Controlled) (Notes tCW1 /CS1 tCW2 tWHZ tCLZ DOUT VALID DATA GM76C8128CL/CLL Write Cycle (CS2 Controlled) (Notes tCW2 tCW1 /CS1 tWHZ tCLZ DOUT VALID DATA Notes: High Read Cycle. Assuming that /CS1 transition High transition occurs coincident with after transition. Outputs remain high impedance state. Assuming that /CS1 High transition transition occurs coincident with prior High transition. Outputs remain high impedance state. Assuming that high write cycle. Outputs high impedance state during this period. GM76C8128CL/CLL Data Retention Characteristics Symbol VCCR ICCR Parameter Data Retention Supply Voltage Data Retention Current GM76C8128C GM76C8128C-E GM76C8128C-I VCC=3.0V Version Version Version Version tRC** Unit tCDR Chip Select Data Retention Time Operation Recovery Time Read Cycle Data Retention Mode: /CS1 Controlled tCDR 4.5V Data Retention Mode 2.2V VCCR1 /CS1>= VCCR 0.2V /CS1 Data Retention Mode: Controlled tCDR 4.5V Data Retention Mode VCCR2 0.2V 0.4V Notes: Data Retention Mode, controls Address, /WE, /CS1, buffer. controls data retention mode, these inputs high impedance state. /CS1 controls data retention mode, must satisfy either VCCR 0.2V CS2<=0.2V. other input levels (Address, /WE, /OE, I/O) high impedance state. GM76C8128CL/CLL Package Dimensions 1.645(41.78) 1.665(42.29) Unit: Inches (mm) 0.600(15.24) 0.625(15.88) 0.045(1.14) 0.055(1.40) 0.008(0.200) 0.015(0.380) 0.15(3.81) 0.165(4.191) 0.190(4.83) 0.016(0.41) 0.020(0.51) 0.100(2.54) 0.015(0.38) 0.125(3.18) 0.135(3.43) 0.02(0.53) 0.04(1.04) 0.435(11.05) 0.445(11.30) 0.004(0.10) 0.010(0.254) 0.799(20.30) 0.815(20.70) 0.086(2.18) 0.090(2.29) 0.014(0.35) 0.020(0.50) 0.050(1.27) 0.004(0.102) 0.010(0.254) 0.55(14.05) 0.57(14.40) 0.600(15.240) 0.540(13.72) GM76C8128CL/CLL TSOP (8x20mm) 0.313(7.95) 0.327(8.30) /CS1 I/O7 I/O6 I/O5 I/O4 I/O3 I/O2 I/O1 I/O0 0.720(18.30) 0.728(18.50) 0.006(0.15) 0.000(0.00) 0.780(19.80) 0.795(20.20) 0.039(1.0) 0.047(1.2) 0.016(0.40) 0.024(0.60) 32Small TSOP-I(8x13.4mm) 0.311(7.95) 0.320(8.2) /CS1 I/O7 I/O6 I/O5 I/O4 I/O3 I/O2 I/O1 I/O0 0.461(11.70) 0.467(11.86) 0.002(0.05) 0.006(0.15) 0.527(13.30) 0.528(13.50) 0.035(1.2) 0.044(1.0) 0.020(0.6) 0.019(0.4) 0.006(0.15) 0.009(0.25) 0.020(0.5) 0.006(0.15) 0.010(0.25) 0.020(0.50) Other recent searchesTS3480 - TS3480 TS3480 Datasheet TA31136FG - TA31136FG TA31136FG Datasheet TA31136FNG - TA31136FNG TA31136FNG Datasheet SSC-06803 - SSC-06803 SSC-06803 Datasheet SB16-45 - SB16-45 SB16-45 Datasheet MMA6270QT - MMA6270QT MMA6270QT Datasheet IXFH69N30P - IXFH69N30P IXFH69N30P Datasheet IXFT69N30P - IXFT69N30P IXFT69N30P Datasheet HA-5135 - HA-5135 HA-5135 Datasheet DDR333B - DDR333B DDR333B Datasheet DDR266A - DDR266A DDR266A Datasheet
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