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Data Sheet PD-6.043C IR2101 HIGH SIDE DRIVER Features
Top Searches for this datasheetData Sheet PD-6.043C IR2101 HIGH SIDE DRIVER Features Floating channel designed bootstrap operation Fully operational +600V Tolerant negative transient voltage dV/dt immune Gate drive supply range from Undervoltage lockout Schmitt-triggered input logic Matched propagation delay both channels Outputs phase with inputs Product Summary VOFFSET IO+/VOUT ton/off (typ.) Delay Matching 600V max. Description IR2101 high voltage, high speed power MOSFET IGBT driver with independent high side referenced output channels. Proprietary HVIC latch immune CMOS technologies enable ruggedized monolithic construction. logic input compatible with standard CMOS LSTTL outputs. output drivers feature high pulse current buffer stage designed minimum driver cross-conduction. floating channel used drive N-channel power MOSFET IGBT high side configuration which operates volts. Packages Typical Connection 600V LOAD Order ONTROL NTEGRATED IRCUIT ESIGNERS ANUAL IR2101 Absolute Maximum Ratings Absolute Maximum Ratings indicate sustained limits beyond which damage device occur. voltage parameters absolute voltages referenced COM. Thermal Resistance Power Dissipation ratings measured under board mounted still conditions. Symbol dVs/dt Parameter Definition High Side Floating Supply Voltage High Side Floating Supply Offset Voltage High Side Floating Output Voltage Side Logic Fixed Supply Voltage Side Output Voltage Logic Input Voltage (HIN LIN) Allowable Offset Supply Voltage Transient Package Power Dissipation +25°C Thermal Resistance, Junction Ambient Junction Temperature Storage Temperature Lead Temperature (Soldering, seconds) Lead DIP) Lead SOIC) Lead DIP) Lead SOIC) Value Min. -0.3 -0.3 -0.3 -0.3 Max. 0.625 Units V/ns °C/W Recommended Operating Conditions Input/Output logic timing diagram shown Figure proper operation device should used within recommended conditions. offset rating tested with supplies biased differential. Symbol Parameter Definition High Side Floating Supply Absolute Voltage High Side Floating Supply Offset Voltage High Side Floating Output Voltage Side Logic Fixed Supply Voltage Side Output Voltage Logic Input Voltage (HIN LIN) Ambient Temperature Value Min. Note Max. Units Note Logic operational +600V. Logic state held -VBS. CONTROL INTEGRATED CIRCUIT DESIGNERS MANUAL Order IR2101 Dynamic Electrical Characteristics VBIAS (VCC, VBS) 15V, 1000 25°C unless otherwise specified. Symbol toff Parameter Definition Turn-On Propagation Delay Turn-Off Propagation Delay Turn-On Rise Time Turn-Off Fall Time Delay Matching, Turn-On/Off Min. Value Typ. Max. Units Test Conditions 600V Static Electrical Characteristics VBIAS (VCC, VBS) 25°C unless otherwise specified. VIN, parameters referenced COM. parameters referenced applicable respective output leads: Symbol IQCC IIN+ IINVCCUV+ VCCUVI Parameter Definition Logic Input Voltage Logic Input Voltage High Level Output Voltage, VBIAS Level OutputVoltage, Offset Supply Leakage Current Quiescent Supply Current QuiescentVCC Supply Current Logic Input Bias Current Logic Input Bias Current Supply Undervoltage Positive Going Threshold Supply Undervoltage Negative Going Threshold Output High Short Circuit Pulsed Current Output Short Circuit Pulsed Current Min. Value Typ. Max. Units Test Conditions 600V 0V,VIN 15V, Order CONTROL INTEGRATED IRCUIT DESIGNERS MANUAL IR2101 Functional Block Diagram LEVEL SHIFT PULSE FILTER PULSE DETECT Lead Definitions Lead Symbol Description Logic input high side gate driver output (HO), phase Logic input side gate driver output (LO), phase High side floating supply High side gate drive output High side floating supply return side logic fixed supply side gate drive output side return Lead Assignments Lead SO-8 IR2101 CONTROL INTEGRATED CIRCUIT DESIGNERS MANUAL IR2101S Order IR2101 Device Information Process Design Rule Transistor Count Size Outline HVDCMOS (mil) Thickness Gate Oxide Connections First Layer Second Layer Contact Hole Dimension Insulation Layer Passivation Method Method Bond Wire Bond Leadframe Material Width Spacing Thickness Material Width Spacing Thickness Material Thickness Material Thickness Package Remarks: Method Material Material Area Lead Plating Types Materials Poly Silicon (Si: 1.0% ±0.1%) (SiO2) (SiO2) Full Ablebond Thermo Sonic (1.0 mil) Lead PDIP SO-8 EME6300 MP150 MP190 Order CONTROL INTEGRATED IRCUIT DESIGNERS MANUAL IR2101 Figure Input/Output Timing Diagram Figure Switching Time Waveform Definitions Figure Delay Matching Waveform Definitions CONTROL INTEGRATED CIRCUIT DESIGNERS MANUAL Order Other recent searchesTSB1424 - TSB1424 TSB1424 Datasheet TLV320AIC20 - TLV320AIC20 TLV320AIC20 Datasheet TLV320AIC21 - TLV320AIC21 TLV320AIC21 Datasheet TLV320AIC24 - TLV320AIC24 TLV320AIC24 Datasheet TLV320AIC25 - TLV320AIC25 TLV320AIC25 Datasheet TLV320AIC20K - TLV320AIC20K TLV320AIC20K Datasheet TLV320AIC24K - TLV320AIC24K TLV320AIC24K Datasheet RXEF010 - RXEF010 RXEF010 Datasheet PTC05SADN - PTC05SADN PTC05SADN Datasheet MSA-0386 - MSA-0386 MSA-0386 Datasheet MAX4684 - MAX4684 MAX4684 Datasheet MAX4685 - MAX4685 MAX4685 Datasheet LCD-160G128C - LCD-160G128C LCD-160G128C Datasheet
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