28A, 100V, 0.077 0.100 Ohm, N-Channel Power MOSFETs These N-Chann

The Datasheet Archive - 100 Million Datasheets from 7500 Manufacturers.

28A, 100V, 0.077 0.100 Ohm, N-Channel Power MOSFETs These N-Chann

Datasheet Thumbnail

Top Searches for this datasheet

IRF540, IRF541, IRF542, IRF543, RF1S540, RF1S540SM
28A, 100V, 0.077 0.100 Ohm, N-Channel Power MOSFETs
These N-Channel enhancement mode silicon gate power field effect transistors. They advanced power MOSFETs designed, tested, guaranteed withstand specified level energy breakdown avalanche mode operation. these power MOSFETs designed applications such switching regulators, switching convertors, motor drivers, relay drivers, drivers high power bipolar switching transistors requiring high speed gate drive power. These types operated directly from integrated circuits. Formerly developmental type TA17421.
November 1997
Features
28A, 100V rDS(ON) 0.077 0.100 Single Pulse Avalanche Energy Rated Nanosecond Switching Speeds Linear Transfer Characteristics High Input Impedance Related Literature TB334 "Guidelines Soldering Surface Mount Components Boards"
Ordering Information
PART NUMBER IRF540 IRF541 IRF542 IRF543 RF1S540 RF1S540SM PACKAGE TO-220AB TO-220AB TO-220AB TO-220AB TO-262AA TO-263AB BRAND IRF540 IRF541 IRF542 IRF543 RF1S540 RF1S540SM
Symbol
NOTE: When ordering, entire part number. suffix obtain TO-263AB variant tape reel, i.e., RF1S540SM9A.
Packaging
JEDEC TO-220AB
SOURCE DRAIN GATE DRAIN (FLANGE)
JEDEC TO-262AA
SOURCE DRAIN GATE
DRAIN (FLANGE)
JEDEC TO-263AB
DRAIN (FLANGE) GATE SOURCE
CAUTION: These devices sensitive electrostatic discharge. Users should follow proper Handling Procedures. Copyright
Harris Corporation 1997
File Number
2309.3
IRF540, IRF541, IRF542, IRF543, RF1S540, RF1S540SM
Absolute Maximum Ratings
25oC, Unless Otherwise Specified IRF540, RF1S540, RF1S540SM IRF541 IRF542 IRF543 UNITS W/oC
Drain Source Breakdown Voltage (Note .VDS Drain Gate Voltage (RGS 20k) (Note VDGR Continuous Drain Current. 100oC Pulsed Drain Current (Note Gate Source Voltage .VGS Maximum Power Dissipation Dissipation Derating Factor Single Pulse Avalanche Energy Rating (Note Operating Storage Temperature TSTG Maximum Temperature Soldering Leads 0.063in (1.6mm) from Case Package Body 10s, Techbrief Tpkg
CAUTION: Stresses above those listed "Absolute Maximum Ratings" cause permanent damage device. This stress only rating operation device these other conditions above those indicated operational sections this specification implied.
NOTE: 25oC 150oC.
Electrical Specifications
PARAMETER Drain Source Breakdown Voltage IRF540, IRF542, RF1S540, RF1S540SM IRF541, IRF543 Gate Threshold Voltage Zero Gate Voltage Drain Current
25oC, Unless Otherwise Specified SYMBOL BVDSS TEST CONDITIONS 250µA, (Figure VGS(TH) IDSS VDS, 250µA Rated BVDSS, Rated BVDSS, 150oC UNITS
On-State Drain Current (Note IRF540, IRF541, RF1S540, RF1S540SM IRF542, IRF543 Gate Source Leakage Current Drain Source Resistance (Note IRF540, IRF541, RF1S540, RF1S540SM IRF542, IRF543 Forward Transconductance (Note Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge (Gate Source Gate Drain) Gate Source Charge Gate Drain "Miller" Charge
ID(ON)
ID(ON) rDS(ON) MAX, (Figure
±100
IGSS rDS(ON)
±20V 17A, (Figures
td(ON) td(OFF) Qg(TOT) 10V, 28A, Rated BVDSS Ig(REF) 1.5mA (Figures Gate Charge Essentially Independent Operating Temperature 50V, (Figure 50V, 28A, 9.1, (Figures MOSFET Switching Times Essentially Independent Operating Temperature
0.060 0.080
0.077 0.100
IRF540, IRF541, IRF542, IRF543, RF1S540, RF1S540SM
Electrical Specifications
PARAMETER Input Capacitance Output Capacitance Reverse Transfer Capacitance Internal Drain Inductance 25oC, Unless Otherwise Specified (Continued) SYMBOL CISS COSS CRSS Measured From Contact Screw Center Measured From Drain Lead, (0.25in) from Package Center Internal Source Inductance Measured From Source Lead, (0.25in) From Header Source Bonding Modified MOSFET Symbol Showing Internal Devices Inductances
TEST CONDITIONS 25V, 1MHz (Figure
1450
UNITS
Thermal Resistance Junction Case Thermal Resistance Junction Ambient
Free Operation RF1S540SM Mounted FR-4 Board with Minimum Mounting
oC/W oC/W oC/W
Source Drain Diode Specifications
PARAMETER Continuous Source Drain Current Pulse Source Drain Current (Note SYMBOL ISDM TEST CONDITIONS Modified MOSFET Symbol Showing Integral Reverse Junction Diode
UNITS
Source Drain Diode Voltage (Note Reverse Recovery Time Reverse Recovery Charge NOTES:
25oC, 27A, (Figure 25oC, 28A, dISD/dt 100A/µs 25oC, 28A, dISD/dt 100A/µs
0.44
Pulse test: pulse width 300µs, duty cycle Repetitive rating: pulse width limited maximum junction temperature. Transient Thermal Impedance curve (Figure 25V, starting 25oC, 440µH, peak 28A. (Figures 16).
IRF540, IRF541, IRF542, IRF543, RF1S540, RF1S540SM Typical Performance Curves
POWER DISSIPATION MULTIPLIER CASE TEMPERATURE (oC) CASE TEMPERATURE (oC)
Unless Otherwise Specified
DRAIN CURRENT
IRF540, IRF541 RF1S540, RF1S540SM IRF542, IRF543
FIGURE NORMALIZED POWER DISSIPATION CASE TEMPERATURE
FIGURE MAXIMUM CONTINUOUS DRAIN CURRENT CASE TEMPERATURE
ZJC, TRANSIENT THERMAL IMPEDANCE (oC/W)
0.05 0.02 0.01 0.01 10-5 SINGLE PULSE 10-4 10-3 10-2 10-1 NOTES: DUTY FACTOR: t1/t2 PEAK RECTANGULAR PULSE DURATION
FIGURE MAXIMUM TRANSIENT THERMAL IMPEDANCE
IRF540, RF1S540, IRF542, DRAIN CURRENT IRF540, RF1S540, IRF542,
25oC 10µs DRAIN CURRENT 100µs
80µs PULSE TEST
10ms IRF540, RF1S540, OPERATION THIS AREA LIMITED rDS(ON) RATED SINGLE PULSE IRF541,
VDS, DRAIN SOURCE VOLTAGE
VDS, DRAIN SOURCE VOLTAGE
FIGURE FORWARD BIAS SAFE OPERATING AREA
FIGURE OUTPUT CHARACTERISTICS
IRF540, IRF541, IRF542, IRF543, RF1S540, RF1S540SM Typical Performance Curves
80µs PULSE TEST
Unless Otherwise Specified (Continued)
ID(ON), ON-STATE DRAIN CURRENT 80µs PULSE TEST DUTY CYCLE 0.5%
DRAIN CURRENT
175oC
25oC
VGS, GATE SOURCE VOLTAGE
VDS, DRAIN SOURCE VOLTAGE
FIGURE SATURATION CHARACTERISTICS
FIGURE TRANSFER CHARACTERISTICS
rDS(ON), DRAIN SOURCE
80µs PULSE DURATION NORMALIZED DRAIN SOURCE RESISTANCE
10V,
RESISTANCE
DRAIN CURRENT
JUNCTION TEMPERATURE (oC)
FIGURE DRAIN SOURCE RESISTANCE GATE VOLTAGE DRAIN CURRENT
FIGURE NORMALIZED DRAIN SOURCE RESISTANCE JUNCTION TEMPERATURE
1.25 NORMALIZED DRAIN SOURCE BREAKDOWN VOLTAGE
250µA
3000 1MHz CISS CRSS COSS CISS
1.15 CAPACITANCE (pF)
2400
1.05
1800
0.95
1200 COSS CRSS
0.85
0.75
VDS, DRAIN SOURCE VOLTAGE
JUNCTION TEMPERATURE (oC)
FIGURE NORMALIZED DRAIN SOURCE BREAKDOWN VOLTAGE JUNCTION TEMPERATURE
FIGURE CAPACITANCE DRAIN SOURCE VOLTAGE
IRF540, IRF541, IRF542, IRF543, RF1S540, RF1S540SM Typical Performance Curves
50V, 80µs PULSE TEST
Unless Otherwise Specified (Continued)
1000 ISD, SOURCE DRAIN CURRENT
gfs, TRANSCONDUCTANCE
25oC 175oC
175oC 25oC
DRAIN CURRENT
VSD, SOURCE DRAIN VOLTAGE
FIGURE TRANSCONDUCTANCE DRAIN CURRENT
FIGURE SOURCE DRAIN DIODE VOLTAGE
VGS, GATE SOURCE VOLTAGE
TOTAL GATE CHARGE (nC)
FIGURE GATE SOURCE VOLTAGE GATE CHARGE
IRF540, IRF541, IRF542, IRF543, RF1S540, RF1S540SM Test Circuits Waveforms
BVDSS VARY OBTAIN REQUIRED PEAK
0.01
FIGURE UNCLAMPED ENERGY TEST CIRCUIT
FIGURE UNCLAMPED ENERGY WAVEFORMS
td(ON)
tOFF td(OFF)
PULSE WIDTH
FIGURE SWITCHING TIME TEST CIRCUIT
FIGURE RESISTIVE SWITCHING WAVEFORMS
CURRENT REGULATOR
(ISOLATED SUPPLY)
Qg(TOT)
BATTERY
0.2µF
0.3µF
SAME TYPE
Ig(REF) CURRENT SAMPLING RESISTOR
CURRENT SAMPLING RESISTOR
IG(REF)
FIGURE GATE CHARGE TEST CIRCUIT
FIGURE GATE CHARGE WAVEFORMS

28A, 100V, 0.077 0.100 Ohm, N-Channel Power MOSFETs These N-Chann

Top Searches for this datasheet

Other recent searches