2SK3408 N-CHANNEL FIELD EFFECT TRANSISTOR SWITCHING DESCRIPT

The Datasheet Archive - 100 Million Datasheets from 7500 Manufacturers.

2SK3408 N-CHANNEL FIELD EFFECT TRANSISTOR SWITCHING DESCRIPT

Datasheet Thumbnail

Top Searches for this datasheet

FIELD EFFECT TRANSISTOR
2SK3408
N-CHANNEL FIELD EFFECT TRANSISTOR SWITCHING
DESCRIPTION
2SK3408 switching device which driven directly power source. 2SK3408 features on-state resistance excellent switching characteristics, suitable applications such power switch dynamic clamp relay
PACKAGE DRAWING (Unit
+0.1 -0.05 0.16+0.1 -0.06
0.65-0.15
+0.1
±0.2
FEATURES
driven power source on-state resistance RDS(on)1 MAX. (VGS RDS(on)2 MAX. (VGS RDS(on)3 MAX. (VGS Built-in protection diode against ESD.
0.95
0.95
0.65
±0.2 Gate Source Drain
ORDERING INFORMATION
PART NUMBER 2SK3408 PACKAGE SC-96 Mini Mold (Thin Type)
EQUIVALENT CIRCUIT
Drain
ABSOLUTE MAXIMUM RATINGS 25°C)
Drain Source Voltage (VGS Drain Gate Voltage (VGS Gate Source Voltage (VDS Drain Current (DC) 25°C) Drain Current (pulse)
Note1
VDSS VDGS VGSS ID(DC) ID(pulse)
Note2
43±5 43±5 ±1.0 ±4.0 1.25 +150
Gate
Body Diode
Gate Protection Diode Marking:
Source
Total Power Dissipation 25°C) Total Power Dissipation 25°C) Channel Temperature Storage Temperature Notes Duty Cycle Mounted FR-4 Board, sec. Remark
Tstg
diode connected between gate source transistor serves protector against ESD. When this device actually used, additional protection circuit externally required voltage exceeding rated voltage applied this device.
information this document subject change without notice. Before using this document, please confirm that this latest version.
devices/types available every country. Please check with local representative availability additional information.
Document D15016EJ3V0DS00 (3rd edition) Date Published April 2001 CP(K) Printed Japan
mark shows major revised points.
2000
2SK3408
ELECTRICAL CHARACTERISTICS 25°C)
CHARACTERISTICS Zero Gate Voltage Drain Current Gate Leakage Current Gate Cut-off Voltage Forward Transfer Admittance Drain Source On-state Resistance SYMBOL IDSS IGSS VGS(off) RDS(on)1 RDS(on)2 RDS(on)3 Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Total Gate Charge Gate Source Charge Gate Drain Charge Body Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Ciss Coss Crss td(on) td(off) VF(S-D) TEST CONDITIONS 30.4 VGS(on) 30.4 di/dt 0.81 MIN. TYP. MAX. UNIT
TEST CIRCUIT SWITCHING TIME
TEST CIRCUIT GATE CHARGE
D.U.T. Duty Cycle
Wave Form
Wave Form
VGS(on)
D.U.T.
td(on)
td(off)
toff
Data Sheet D15016EJ3V0DS
2SK3408
TYPICAL CHARACTERISTICS 25°C)
DERATING FACTOR FORWARD BIAS SAFE OPERATING AREA
Derating Factor
FORWARD BIAS SAFE OPERATING AREA
Drain Current
Lim10
(pulse)
(DC)
Single Pulse Mounted Copper Connected Drain Electrode FR-4 Board
0.01
Ambient Temperature
Drain Source Voltage
DRAIN CURRENT DRAIN SOURCE VOLTAGE
0.01 0.001
FORWARD TRANSFER CHARACTERISTICS
Drain Current
Drain Current
125°C 75°C 25°C -25°C
0.0001
0.00001
Drain Source Voltage
Gate Sorce Voltage
GATE CUT-OFF VOLTAGE CHANNEL TEMPERATURE
FORWARD TRANSFER ADMITTANCE DRAIN CURRENT
VGS(off) Gate Cut-off Voltage
Forward Transfer Admittance
-25°C 25°C 75°C 125°C
0.01 0.01
Channel Temperature
Drain Current
Data Sheet D15016EJ3V0DS
2SK3408
RDS(on) Drain Source On-state Resistance
RDS(on) Drain Source On-state Resistance
DRAIN SOURCE ON-STATE RESISTANCE DRAIN CURRENT
DRAIN SOURCE ON-STATE RESISTANCE DRAIN CURRENT
125°C
125°C 75°C
75°C
25°C
25°C
-25°C
-25°C
0.01
0.01
Drain Current
Drain Current
RDS(on) Drain Source On-state Resistance
(on) Drain Source On-state Resistance
DRAIN SOURCE ON-STATE RESISTANCE DRAIN CURRENT
125°C
DRAIN SOURCE ON-STATE RESISTANCE CHANNEL TEMPERATURE
75°C
25°C
-25°C
0.01
Drain Current
Channel Temperature
(on) Drain Source On-state Resistance
DRAIN SOURCE ON-STATE RESISTANCE GATE SOURCE VOLTAGE
CAPACITANCE DRAIN SOURCE VOLTAGE
Ciss, Coss, Crss Capacitance
1000
Ciss
Coss Crss
Gate Source Voltage
Drain Source Voltage
Data Sheet D15016EJ3V0DS
2SK3408
SWITCHING CHARACTERISTICS 1000
SOURCE DRAIN DIODE FORWARD VOLTAGE
Source Drain Current
td(on), td(off), Swwitchig Time
td(off)
td(on) VGS(on) Drain Current
0.01
Pulsed
VF(S-D) Diode Forward Voltage
DYNAMIC INPUT CHARACTERISTICS
Gate Source Voltage
Gate Charge
1000
TRANSIENT THERMAL RESISTANCE PULSE WIDTH
rth(ch-A) Transient Thermal Resistance °C/W
Single Pulse
Without Board
Mounted Copper Connected Drain Electrode 2500 FR-4 Board
0.001
0.01
Pulse Width
1000
Data Sheet D15016EJ3V0DS
2SK3408
DYNAMIC CLAMP APPLICATION
Relay
Load Microcomputer
Remarks
Input resistance necessary Gate terminal. (Range 10k, Recommend Pull down resistance necessary between Gate Source. (Several 10k)
Data Sheet D15016EJ3V0DS
2SK3408
[MEMO]
Data Sheet D15016EJ3V0DS
2SK3408
information this document current April, 2001. information subject change without notice. actual design-in, refer latest publications NEC's data sheets data books, etc., most up-to-date specifications semiconductor products. products and/or types available every country. Please check with sales representative availability additional information. part this document copied reproduced form means without prior written consent NEC. assumes responsibility errors that appear this document. does assume liability infringement patents, copyrights other intellectual property rights third parties arising from semiconductor products listed this document other liability arising from such products. license, express, implied otherwise, granted under patents, copyrights other intellectual property rights others. Descriptions circuits, software other related information this document provided illustrative purposes semiconductor product operation application examples. incorporation these circuits, software information design customer's equipment shall done under full responsibility customer. assumes responsibility losses incurred customers third parties arising from these circuits, software information. While endeavours enhance quality, reliability safety semiconductor products, customers agree acknowledge that possibility defects thereof cannot eliminated entirely. minimize risks damage property injury (including death) persons arising from defects semiconductor products, customers must incorporate sufficient safety measures their design, such redundancy, fire-containment, anti-failure features. semiconductor products classified into following three quality grades: "Standard", "Special" "Specific". "Specific" quality grade applies only semiconductor products developed based customer-designated "quality assurance program" specific application. recommended applications semiconductor product depend quality grade, indicated below. Customers must check quality grade each semiconductor product before using particular application. "Standard": Computers, office equipment, communications equipment, test measurement equipment, audio visual equipment, home electronic appliances, machine tools, personal electronic equipment industrial robots "Special": Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment medical equipment (not specifically designed life support) "Specific": Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems medical equipment life support, etc. quality grade semiconductor products "Standard" unless otherwise expressly specified NEC's data sheets data books, etc. customers wish semiconductor products applications intended NEC, they must contact sales representative advance determine NEC's willingness support given application. (Note) "NEC" used this statement means Corporation also includes majority-owned subsidiaries. "NEC semiconductor products" means semiconductor product developed manufactured defined above).

2SK3408 N-CHANNEL FIELD EFFECT TRANSISTOR SWITCHING DESCRIPT

Top Searches for this datasheet

Other recent searches