IRF540 Advance Information Description Linear MOSFET's

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IRF540 Advance Information Description Linear MOSFET's

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POWER MOSFET
IRF540
Advance Information
Description
Linear MOSFET's provide designers with best combination fast switching, ruggedized device design, 0n-resistance cost-effectiveness. TO-220 offered 3-pin universally preferred commercial-industrial applications power dissipation level approximately Watts. Also, available surface mount power package with power dissipation Watts.
Features
Dynamic dv/dt Rating Repetitive Avalanche Rated Fast Switching Ease Paralleling Simple Drive Requirements
VDSS 100V (ON) 0.077 =28A Ordering Information
Device
IRL540T IRL540S
Package
TO-220 TO-263
Temp.
150°C 150°C
Absolute Maximum Rating
Parameter
=25°C =100°C =25°C =25°C Continuous Drain Current, @10V Continuous Drain Current, @10V Pulsed Drain Current Power Dissipation Power Dissipation Mount, Linear Derating Factor Linear Derating Factor Mount, Gate-to- Source Voltage TO-220 Gate-to- Source Voltage Single Pulse Avalanche Energy TO-220 (2a) Single Pulse Avalanche Energy (2b) Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Junction Storage Temperature Range Soldering Temperature, seconds
0.025 +175 (1.6mm from case)
Unit
W/°C V/ns
dv/dt TSTG
Thermal Resistance
Parameter
Linear, Junction-to Case Case-to-Sink, Flat, Greased Surface TO-220) Junction-to Ambient Mount, Junction-to Ambient
0.50
Units
°C/W
2478 Armstrong Street, Livermore, 94550 Tel: (925) 606-5950, Fax: (925) 940-9556
www.baylinear.com
IRF540
Electrical Characteristics
Symbol
V(BR)DSS V(BR)DSS ID(ON) RDS(ON) VGS(TH) IDSS 25°C unless otherwise specified)
Parameter
Drain-to-source Breakdown Voltage Breakdown Voltage Temperature Coefficient On-State Drain Current (note Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-to -Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate- -Source Charge Turn-On Delay Time Fall Time Turn -Off Delay Time Rise Time Internal Drain Inductance Internal Source Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance
Conditions
250µA Reference 25°C, ID(ON) RDS(ON)Max TO-220: 10V, (note VGS,ID 250µA 50V, VDS=100V,VGS=0V VDS=80V,VGS=0V,TJ=150°C
Units
0.13
0.077
V/°C
IGSS (off) Ciss COSS Crss
-20V ID=17V VDS=80V VDD=50V RD=2.9 RG=9.1 ID=17A Between lead 6mm(0.25in.) from package center contact VGS=0V VDS=25V =1.0MHZ
-100 1700
Source-Drain Rating Characteristics
Symbol
Parameter
Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward Turn-On Time
Conditions
MOSFET symbol showing integral reverse junction diode.
Units
TJ=25°C, IS=28A,VGS=DV TJ=25 IF=17A di/dt=100A/µs Intrinsic turn-on time negligible (turn-on dominated (LS+LD)
Notes: Repetitive Rating; pulse width limited max. junction temperature. 25V, starting 25°C, 440µH 25V, starting 25°C, 841µH 28A, di/dt 170A/µs, V(BR)DSS, 150°C Pulse with 300µs; duty cycle
Linear,
2478 Armstrong Street, Livermore, 94550 Tel: (925) 606-5950, Fax: (925) 940-9556
www.baylinear.com
Advance Information- These data sheets contain descriptions products that development. specifications based engineering calculations, computer simulations and/ initial prototype evaluation. Preliminary Information- These data sheets contain minimum maximum specifications that based initial device characterizations. These limits subject change upon completion full characterization over specified temperature supply voltage ranges.
application circuit examples only explain representative applications devices intended guarantee circuit design permit industrial property right other rights execute. Linear takes responsibility problems related industrial property right resulting from contents shown data book. Typical parameters vary different applications. Customer's technical experts must validate operating parameters including Typical" each customer application.
LIFE SUPPORT NUCLEAR POLICY Linear products authorized should used within life support systems which intended surgical implants into body support sustain life, aircraft, space equipment, submarine, nuclear facility applications without specific written consent Linear President.
Linear,
2478 Armstrong Street, Livermore, 94550 Tel: (925) 606-5950, Fax: (925) 940-9556
www.baylinear.com

IRF540 Advance Information Description Linear MOSFET's

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