-30V/-4.9A, RDS(ON) 53m(typ.) -10V RDS(ON) 80m(typ.) -4.5V Super High

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-30V/-4.9A, RDS(ON) 53m(typ.) -10V RDS(ON) 80m(typ.) -4.5V Super High

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APM4953
-30V/-4.9A, RDS(ON) 53m(typ.) -10V RDS(ON) 80m(typ.) -4.5V Super High Density Cell Design Reliable Rugged SO-8 Package
Description
Applications
Power Management Notebook Computer, Portable Equipment Battery Powered Systems
Ordering Marking Information
4953
ange ackage
P-Channel MOSFET
ackage Tube Tape Reel
4953
4953 XXXXX
Absolute Maximum Ratings
Symbol VDSS VGSS Drain-Source Voltage Gate-Source Voltage Parameter
25°C unless otherwise noted)
Rating 25°C -4.9 Unit
Maximum Drain Current Continuous Maximum Drain Current Pulsed
Surface Mounted Board, sec.
ANPEC reserves right make changes improve reliability manufacturability without notice, advise customers obtain latest version relevant information verify before placing orders. Copyright ANPEC Electronics Corp. Rev. Feb., 2003 www.anpec.com.tw
APM4953
Absolute Maximum Ratings (Cont.)
Symbol TSTG
25°C unless otherwise noted)
Rating Unit °C/W
Parameter Maximum Power Dissipation Maximum Junction Temperature Storage Temperature Range Thermal Resistance Junction Ambient 25°C 100°C
Electrical Characteristics
Symbol Static IDSS VGS(th) IGSS DS(ON) Dynamic td(ON) td(OFF)
(TA=25°C unless otherwise noted)
APM4953 Max.
Parameter
Test Condition
Min.
Unit
Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Threshold Voltage Gate Leakage Current Drain-Source On-state Resistance
VGS=0V IDS=-250µA VDS=-24V VGS=0V VDS=VGS IDS=-250µA VGS=±25V VDS=0V VGS=-10V IDS=-4.9A VGS=-4.5V IDS=-3.6A ISD=-1.7A VGS=0V VDS=-15V IGS=-10V lD=-4.6A VDD=-15V ID=-2A VGEN=-10V L=7.5 VGS=0V
-1.5 -0.7 22.3 4.65 1260
±100 -1.3
Diode Forward Voltage Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-on Delay Time Turn-on Rise Time Turn-off Delay Time Turn-off Fall Time Input Capacitance Output Capacitance
VDS=-25V Reverse Transfer Capacitance Frequency=1.0MHz
Notesa
Pulse test pulse width 300µs, duty cycle Guaranteed design, subject production testing
Copyright ANPEC Electronics Corp. Rev. Feb., 2003
www.anpec.com.tw
APM4953
Typical Characteristics
Output Characteristics
Transfer Characteristics
-V/5= 5,6,7,8,9,10V
-ID-Drain Current
-ID-Drain Current
-V/5=4V
TJ=125°C
-V/5=3V -V/5=2V
TJ=25°C
TJ=-55°C
-VDS Drain-to-Source Voltage
-VGS Gate-to-Source Voltage
Threshold Voltage Junction Temperature
1.50
On-Resistance Drain Current
0.14
-IDS=250µA
-VGS(th)-Threshold Voltage (Normalized)
RDS(on)-On-Resistance
1.25 1.00 0.75 0.50 0.25 0.00
0.12 0.10 0.08 0.06 0.04 0.02 0.00 V/5=-4.5V V/5=-10V
Junction Temperature (°C)
Drain Current
Copyright ANPEC Electronics Corp. Rev. Feb., 2003
www.anpec.com.tw
APM4953
Typical Characteristics (Cont.)
On-Resistance Gate-to-Source Voltage
0.250
On-Resistance Junction Temperature
2.00
RDS(on)-On-Resistance
0.200 0.175 0.150 0.125 0.100 0.075 0.050 0.025
RDS(on)-On-Resistance (Normalized)
0.225
-I,= 4.9A
1.75 1.50 1.25
-VGS=10V -ID=4.9A
0.75 0.50 0.25 0.00
-VGS Gate-to-Source Voltage
Junction Temperature (°C)
Gate Charge
Capacitance
2800 2400
-VGS-Gate-Source Voltage
-VD=10V -ID=4.9A
Frequency=1MHz
Capacitance (pF)
2000 1600 1200
Ciss
Coss Crss
Gate Charge (nC)
-VDS Drain-to-Source Voltage
Copyright ANPEC Electronics Corp. Rev. Feb., 2003
www.anpec.com.tw
1.00
APM4953
Typical Characteristics (Cont.)
Source-Drain Diode Forward Voltage
Single Pulse Power
-IS-Source Current
Power
TJ=150°C
TJ=25°C
0.01
-VSD-Source-to-Drain Voltage
Time (sec)
Normalized Thermal Transient Impedence, Junction Ambient
Normalized Effective Transient Thermal Impedance
Duty Cycle
0.05
0.02
SINGLE PULSE
1.Duty Cycle, D=t1/t2 2.Per Unit Base=RthJA=50°C/W thJA 4.Surface Mounted
0.01 1E-4
1E-3
0.01
Square Wave Pulse Duration (sec)
Copyright ANPEC Electronics Corp. Rev. Feb., 2003
www.anpec.com.tw
APM4953
Packaging Information
SOP-8 Reference JEDEC Registration MS-012)
0.004max.
Min. 27BSC Min.
0.015X45
Inche 50BSC
Copyright ANPEC Electronics Corp. Rev. Feb., 2003
www.anpec.com.tw
APM4953
Physical Specifications
Terminal Material Lead Solderability Solder-Plated Copper (Solder Material 90/10 63/37 SnPb) Meets Specification RSI86-91, ANSI/J-STD-002 Category
(IR/Convection Reflow)
Reflow Condition
temperature
Peak temperature 183°C Pre-heat temperature
Time
Classification Reflow Profiles
Convection Convection Average ramp-up rate(183°C Peak) 3°C/second max. seconds Preheat temperature 25°C) seconds Temperature maintained above 183°C Time within actual peak temperature seconds Peak temperature range +5/-0°C +5/-0°C Ramp-down rate /second max. minutes max. Time 25°C peak temperature /second max. seconds 215-219°C +5/-0°C /second max.
Package Reflow Conditions
pkg. thickness 2.5mm bgas Convection +5/-0 215-219 IR/Convection +5/-0 pkg. thickness 2.5mm pkg. volume pkg. thickness 2.5mm pkg. volume Convection +5/-0 +5/-0 IR/Convection +5/-0
www.anpec.com.tw
Copyright ANPEC Electronics Corp. Rev. Feb., 2003
APM4953
Reliability test program
Test item SOLDERABILITY HOLT Method MIL-STD-883D-2003 MIL-STD 883D-1005.7 JESD-22-B, A102 MIL-STD 883D-1011.9 Description 245°C,5 1000 Bias 125°C Hrs, 100% 121°C -65°C 150°C, Cycles
Carrier Tape Reel Dimensions
Application
+1.5
12.75+ 0.15
12.4
5.2±
1.75±0.1
SOP-
5.5±
1.55 +0.1 1.55+ 0.25
2.1± 0.3±0.013
Copyright ANPEC Electronics Corp. Rev. Feb., 2003
www.anpec.com.tw
APM4953
Cover Tape Dimensions
Application SOP- Carrier Width Cover Tape Width Devices Reel 2500
Customer Service
Anpec Electronics Corp. Head Office Li-Hsin Road, SBIP, Hsin-Chu, Taiwan, R.O.C. 886-3-5642000 886-3-5642050 Taipei Branch 137, Lane 235, Chiao Rd., Hsin Tien City, Taipei Hsien, Taiwan, 886-2-89191368 886-2-89191369
Copyright ANPEC Electronics Corp. Rev. Feb., 2003
www.anpec.com.tw

-30V/-4.9A, RDS(ON) 53m(typ.) -10V RDS(ON) 80m(typ.) -4.5V Super High

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