100mA forward voltage Designed mounting small surface. Extremely
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ASB40
100mA
forward voltage Designed mounting small surface. Extremely thin package. Majority carrier conduction. Lead-free device
0.010(0.25)Typ. 0.033(0.85) 0.027(0.70)
General Description
0603(1608)
0.071(1.80) 0.063(1.60) 0.039(1.00) 0.031(0.80)
0.012(0.30)Typ.
0.014(0.35)Typ. Dimensions inches (millimeter)
1005(2512)
0.102(2.60) 0.095(2.40)
Mechanical Data
Case 0603(1608) 1005(2512) standard package, molded plastic. Terminals Gold plated, solderable MIL-STD-750, method 2026. Polarity Indicated cathode band. Mounting position Any.
Weight BD:0.003gram (approximately)
0.014(0.35)Typ. 0.014(0.35)Typ.
0.051(1.30) 0.043(1.10)
0.035(0.90) 0.027(0.70)
0.012(0.30)Typ.
Dimensions inches (millimeter)
BF:0.006gram (approximately)
Ordering information
Feature Schottky Barrier
Part
Package type BD-0603 BF-1005
This datasheet contains product information. Anachip Corp. reserves rights modify product specification without notice. liability assumed result this product. rights under patent accompany sale product.
Rev. 2004
ASB40
Schottky Barrier Diode Maximum Rating unless otherwise noted)
Symbol Parameter Conditions Unit
IFSM TSTG
Peak reverse voltage Reverse voltage Average forward rectified current Forward current, surge peak Storage temperature Junction temperature 8.3ms single half sine-wave superimposed rate load (JEDEC method)
+125 +125
Electrical Characteristics unless otherwise noted)
Symbol Parameter Conditions Min. Typ. Max. Unit
Forward voltage Reverse current Capacitance between terminals Reverse recovery time
IF=1mA IF=40mA VR=30V f=1MHz, reverse voltage IF=IR=10mA, Irr=0.1 RL=100
0.38
Anachip Corp. www.anachip.com.tw
Rev. 2004
ASB40
Schottky Barrier Diode Rating Characteristic Curves
Fig. Forward characteristics Fig. Reverse characteristics
Fig. Capacitance between terminals characteristics
Fig. Current derating curve
Marking Information
ASB40
Anachip Corp. www.anachip.com.tw
Rev. 2004
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