100mA Designed mounting small surface. Extremely thin package. dr
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ASB0130
100mA
Designed mounting small surface. Extremely thin package. drop-down voltage. Majority carrier conduction. Lead-free device
0.010(0.25)Typ. 0.033(0.85) 0.028(0.70)
General Description
0603(1608)
0.071(1.80) 0.063(1.60) 0.039(1.00) 0.031(0.80)
0.012(0.30)Typ.
0.014(0.35)Typ. Dimensions inches (millimeter)
1005(2512)
0.102(2.60) 0.095(2.40) 0.051(1.30) 0.043(1.10)
Mechanical Data
Case :0603(1608) 1005(2512) standard package, molded plastic. Terminals Gold plated, solderable MIL-STD-750, method 2026. Polarity Indicated cathode band. Mounting position Any.
Weight BD:0.003gram (approximately)
0.014(0.35)Typ. 0.014(0.35)Typ.
0.035(0.90) 0.027(0.70)
0.012(0.30)Typ.
Dimensions inches (millimeter)
BF:0.006gram (approximately)
Ordering information
Feature Schottky Barrier
Package type BD-0603 BF-1005
This datasheet contains product information. Anachip Corp. reserves rights modify product specification without notice. liability assumed result this product. rights under patent accompany sale product.
Rev. 2004
ASB0130
Schottky Barrier Diode Maximum Rating unless otherwise noted)
Symbol Parameter Conditions Unit
VRRM IFSM TSTG
Repetitive peak reverse voltage Reverse voltage Average forward current Forward current, surge peak Power Dissipation Storage temperature Junction temperature 0603 1005 0603 1005 8.3ms single half sine-wave superimposed rate load (JEDEC method)
1000 1000
+125 +125
Electrical Characteristics unless otherwise noted)
Symbol Parameter Conditions Min. Typ. Max. Unit
Forward voltage Reverse current Capacitance between terminals
IF=100mADC VR=30V F=1MHz, reverse voltage
0.44
Anachip Corp. www.anachip.com.tw
Rev. 2004
ASB0130
Schottky Barrier Diode Rating Characteristic Curves
Ambient temperature
Marking Information
ASB0130
Anachip Corp. www.anachip.com.tw
Rev. 2004
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