P-Channel 30-V (D-S) MOSFET Features -Low rDS(on) Provides Higher

The Datasheet Archive - 100 Million Datasheets from 7500 Manufacturers.

P-Channel 30-V (D-S) MOSFET Features -Low rDS(on) Provides Higher

Datasheet Thumbnail

Top Searches for this datasheet

AF4811P
P-Channel 30-V (D-S) MOSFET Features
-Low rDS(on) Provides Higher Efficiency Extends Battery Life -Miniature SO-8 Surface Mount Package Saves Board Space -High power current handling capability -Extended range (±25) battery pack applications
These miniature surface mount MOSFETs utilize High Cell Density process. rDS(on) assures minimal power loss conserves energy, making this device ideal power management circuitry. Typical applications DC-DC converters, power management portable battery-powered products such computers, printers, battery charger, telecommunication power system, telephones power system.
Product Summary
rDS(on) 30@VGS=-10V 52@VGS=-4.5V
Assignments
Descriptions
Name
Description Source Gate Drain
SOP-8
Ordering information
Feature :MOSFET 4811P Package SOP-8 Lead Free Blank Normal Lead Free Package Packing Blank Tube Bulk Tape Reel
This datasheet contains product information. Anachip Corp. reserves rights modify product specification without notice. liability assumed result this product. rights under patent accompany sale product.
Rev. 2004
AF4811P
P-Channel 30-V (D-S) MOSFET Absolute Maximum Ratings unless otherwise noted)
Symbol TSTG Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (Note Pulsed Drain Current (Note Continuous Source Current (Diode Conduction) (Note Power Dissipation (Note Operating Junction Storage Temperature Range Rating -2.1 Units
Thermal Resistance Ratings
Symbol Parameter Maximum Junction-to-Case (Note Maximum Junction-to-Ambient (Note Maximum Units
Note surface Mounted Board. Note Pulse width limited maximum junction temperature
Specifications unless otherwise noted)
Symbol Static V(BR)DSS VGS(th) IGSS IDSS ID(on) rDS(on) Parameter Drain-Source breakdown Voltage Gate-Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Current (Note Drain-Source On-Resistance (Note Test Conditions VGS=0V, ID=-250uA VDS= VGS, ID=-250uA VDS=0V, VGS=±25V VDS=-24V, VGS=0V VDS=-24V, VGS=0V, VDS=-5V, VGS=-10V VGS=-10V, ID=-9.5A VGS=-4.5V, ID=-7.5A VGS=-10V, ID=-9.5A, VGS=-15V, ID=-9.5A IS=-2.1A, VGS=0V VDS=-15V, VGS=-10V, ID=-9.5A Min. Limits Typ. -1.6 -0.7 Max. ±100 -1.2 Unit
Forward Tranconductance (Note Diode Forward Voltage Dynamic (Note Total Gate Charge Gate-Source Charge Gate-Drain Charge Switching td(on) Turn-On Delay Time Rise Time td(off) Turn-Off Delay Time Fall-Time
VDD=-15, RL=15, ID=-1A, VGEN=-10V, RG=6
Note Pulse test: 300us duty cycle Note Guaranteed design, subject production testing.
Anachip Corp. www.anachip.com.tw
Rev. 2004
AF4811P
P-Channel 30-V (D-S) MOSFET Marking Information
SOP-8L
View
Logo Part Number
4811P
code: "X": Non-Lead Free; "X": Lead Free "A~Z": 01~26; "A~Z": 27~52 Week code: "A~Z": 01~26; "A~Z": 27~52 Year code: =2004 Factory code
Package Information
Package Type: SOP-8L
VIEW (4X)
0.015x45
(4X)
VIEW
Symbol
Dimensions Millimeters Min. Nom. Max. 1.40 1.60 1.75 0.10 0.25 1.30 1.45 1.50 0.33 0.41 0.51 0.19 0.20 0.25 4.80 5.05 5.30 3.70 3.90 4.10 1.27 5.79 5.99 6.20 0.38 0.71 1.27 0.10
Dimensions Inches Min. Nom. Max. 0.055 0.063 0.069 0.040 0.100 0.051 0.057 0.059 0.013 0.016 0.020 0.0075 0.008 0.010 0.189 0.199 0.209 0.146 0.154 0.161 0.050 0.228 0.236 0.244 0.015 0.028 0.050 0.004
Anachip Corp. www.anachip.com.tw
Rev. 2004

P-Channel 30-V (D-S) MOSFET Features -Low rDS(on) Provides Higher

Top Searches for this datasheet

Other recent searches