4302.2 42A, 30V, 0.025 Ohm, Logic Level, N-Channel Power MOSFET

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4302.2 42A, 30V, 0.025 Ohm, Logic Level, N-Channel Power MOSFET

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RFP42N03L, RF1S42N03LSM
4302.2
42A, 30V, 0.025 Ohm, Logic Level, N-Channel Power MOSFET
These N-Channel power MOSFETs manufactured using MegaFET process. This process, which uses feature sizes approaching those circuits, gives optimum utilization silicon, resulting outstanding performance. They were designed applications such switching regulators, switching converters, motor drivers relay drivers. These transistors operated directly from integrated circuits. Formerly developmental type TA49030.
Features
42A, rDS(ON) 0.025 Temperature Compensating PSPICE® Model Driven Directly from CMOS, NMOS, Circuits Peak Current Pulse Width Curve Rating Curve 175oC Operating Temperature Related Literature TB334 "Guidelines Soldering Surface Mount Components Boards"
Ordering Information
PART NUMBER RFP42N03L RF1S42N03LSM PACKAGE TO-220AB TO-263AB BRAND FP42N03L F42N03L
Symbol
NOTE: When ordering, entire part number. suffix, obtain TO-263AB variant tape reel, e.g., RF1S42N03LSM9A.
Packaging
JEDEC TO-220AB JEDEC TO-263AB
SOURCE DRAIN GATE DRAIN (FLANGE) GATE SOURCE
DRAIN (FLANGE)
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CAUTION: These devices sensitive electrostatic discharge; follow proper Handling Procedures. PSPICE® registered trademark MicroSim Corporation. http://www.intersil.com 407-727-9207 Copyright Intersil Corporation 1999
RFP42N03L, RF1S42N03LSM
Absolute Maximum Ratings
25oC, Unless Otherwise Specified RFP42N03L, RF1S42N03LSM Refer Peak Current Curve Refer Curve 0.606 UNITS
Drain Source Voltage (Note VDSS Drain Gate Voltage (RGS 20k) (Note VDGR Gate Source Voltage Continuous Drain Current Pulsed Drain Current (Note Pulsed Avalanche Rating Power Dissipation Derate Above 25oC Operating Storage Temperature TSTG Maximum Temperature Soldering Leads 0.063in (1.6mm) from Case 10s. Package Body 10s, Techbrief .Tpkg
W/oC
CAUTION: Stresses above those listed "Absolute Maximum Ratings" cause permanent damage device. This stress only rating operation device these other conditions above those indicated operational sections this specification implied.
NOTE: 25oC 150oC.
Electrical Specifications
PARAMETER
25oC, Unless Otherwise Specified SYMBOL BVDSS VGS(TH) IDSS IGSS rDS(ON) td(ON) td(OFF) tOFF Qg(TOT) Qg(5) Qg(TH) CISS COSS CRSS 24V, 42A, 0.571 IG(REF) 0.6mA (Figures TEST CONDITIONS 250µA, VDS, 250µA Rated BVDSS, Rated BVDSS, 150oC ±10V 42A, (Figure 15V, 42A, 0.357, (Figures 1650 ±100 0.025 1.65 UNITS
oC/W oC/W
Drain Source Breakdown Voltage Gate Source Threshold Voltage Zero Gate Voltage Drain Current
Gate Source Leakage Current Drain Source Resistance (Note Turn-On Time Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-Off Time Total Gate Charge Gate Charge Threshold Gate Charge Input Capacitance Output Capacitance Reverse Transfer Capacitance Thermal Resistance Junction-to-Case Thermal Resistance Junction-to-Ambient
25V, 1MHz (Figure
Source Drain Diode Specifications
PARAMETER Source Drain Diode Voltage Diode Reverse Recovery Time NOTES: Pulse test: pulse width 300µs, duty cycle Repetitive rating: pulse width limited junction temperature. Transient Thermal Impedance curve (Figure SYMBOL 42A, dISD/dt 100A/µs TEST CONDITIONS UNITS
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RFP42N03L, RF1S42N03LSM Typical Performance Curves
POWER DISSIPATION MULTIPLIER CASE TEMPERATURE (oC) DRAIN CURRENT
Unless Otherwise Specified
CASE TEMPERATURE (oC)
FIGURE NORMALIZED POWER DISSIPATION CASE TEMPERATURE
FIGURE MAXIMUM CONTINUOUS DRAIN CURRENT CASE TEMPERATURE
THERMAL IMPEDANCE ZJC, NORMALIZED 0.05 0.02 0.01 SINGLE PULSE 0.01 10-5 10-4 10-3 10-2 10-1 RECTANGULAR PULSE DURATION NOTES: DUTY FACTOR: t1/t2 PEAK
FIGURE NORMALIZED MAXIMUM TRANSIENT THERMAL IMPEDANCE
IDM, PEAK CURRENT CAPABILITY
25oC, 175oC
TEMPERATURES ABOVE 25oC DERATE PEAK CURRENT FOLLOWS:
DRAIN CURRENT
100µs
10ms 100ms
OPERATION THIS AREA LIMITED rDS(ON) VDS, DRAIN SOURCE VOLTAGE
TRANSCONDUCTANCE LIMIT CURRENT THIS REGION 25oC 10-4 10-3 10-2 10-1 PULSE WIDTH
10-5
FIGURE FORWARD BIAS SAFE OPERATING AREA
FIGURE PEAK CURRENT CAPABILITY
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RFP42N03L, RF1S42N03LSM Typical Performance Curves
IAS, AVALANCHE CURRENT DRAIN CURRENT STARTING 25oC 4.5V PULSE DURATION 80µs DUTY CYCLE 0.5% 25oC 3.5V VDS, DRAIN SOURCE VOLTAGE
Unless Otherwise Specified (Continued)
STARTING 150oC
(L)(IAS)/(1.3*RATED BVDSS VDD) (L/R)ln[(IAS*R)/(1.3*RATED BVDSS-VDD) 0.001 0.01 tAV, TIME AVALANCHE (ms)
NOTE: Refer Intersil Application Notes AN9321 AN9322. FIGURE UNCLAMPED INDUCTIVE SWITCHING FIGURE SATURATION CHARACTERISTICS
IDS(ON), DRAIN SOURCE CURRENT
PULSE DURATION 80µs DUTY CYCLE 0.5% 25oC -55oC 175oC rDS(ON), DRAIN SOURCE
RESISTANCE
PULSE DURATION 80µs DUTY CYCLE 0.5% VGS, GATE SOURCE VOLTAGE
VGS, GATE SOURCE VOLTAGE
FIGURE TRANSFER CHARACTERISTICS
FIGURE DRAIN SOURCE RESISTANCE GATE VOLTAGE DRAIN CURRENT
15V, 42A, 0.357 NORMALIZED DRAIN SOURCE RESISTANCE
PULSE DURATION 80µs DUTY CYCLE 0.5%
SWITCHING TIME (ns)
td(OFF) td(ON) RGS, GATE SOURCE RESISTANCE
JUNCTION TEMPERATURE (oC)
FIGURE SWITCHING TIME GATE RESISTANCE
FIGURE NORMALIZED DRAIN SOURCE RESISTANCE JUNCTION TEMPERATURE
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RFP42N03L, RF1S42N03LSM Typical Performance Curves
NORMALIZED DRAIN SOURCE BREAKDOWN VOLTAGE VDS, 250µA NORMALIZED GATE THRESHOLD VOLTAGE
Unless Otherwise Specified (Continued)
250µA
JUNCTION TEMPERATURE (oC)
JUNCTION TEMPERATURE (oC)
FIGURE NORMALIZED GATE THRESHOLD VOLTAGE JUNCTION TEMPERATURE
2500 0.1MHz CISS CRSS COSS
FIGURE NORMALIZED DRAIN SOURCE BREAKDOWN VOLTAGE JUNCTION TEMPERATURE
DRAIN SOURCE VOLTAGE BVDSS BVDSS GATE SOURCE VOLTAGE
2000 CAPACITANCE (pF) CISS 1500
0.75 BVDSS 0.50 BVDSS 0.25 BVDSS 0.714 IG(REF) 0.6mA
1000 COSS CRSS
TIME (µs)
VDS, DRAIN SOURCE VOLTAGE
NOTE: Refer Intersil Application Notes AN7254 AN7260. FIGURE CAPACITANCE DRAIN SOURCE VOLTAGE FIGURE NORMALIZED SWITCHING WAVEFORMS CONSTANT GATE CURRENT
Test Circuits Waveforms
BVDSS VARY OBTAIN REQUIRED PEAK
0.01
FIGURE UNCLAMPED ENERGY TEST CIRCUIT
FIGURE UNCLAMPED ENERGY WAVEFORMS
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RFP42N03L, RF1S42N03LSM Test Circuits Waveforms
(Continued)
td(ON)
tOFF td(OFF)
PULSE WIDTH
FIGURE SWITCHING TIME TEST CIRCUIT
FIGURE RESISTIVE SWITCHING WAVEFORMS
Qg(TOT)
Ig(REF) Qg(TH) IG(REF)
Qg(5)
FIGURE GATE CHARGE TEST CIRCUIT
FIGURE GATE CHARGE WAVEFORMS
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RFP42N03L, RF1S42N03LSM PSPICE Electrical Model
.SUBCKT RFP42N03L
2.55e-9 2.64e-9 1.45e-9 DBODY DBDMOD DBREAK DBKMOD DPLCAP DPLCAPMOD EBREAK 33.3 EVTO LDRAIN 1e-9 LGATE 4.9e-9 LSOURCE 4.9e-9 MOS1 MOSMOD 0.99 MOS2 MOSMOD 0.01 RBREAK RBKMOD RDRAIN RDSMOD 0.14e-3 RGATE 0.89 RLDRAIN RLGATE RLSOURCE RSCL1 RSCLMOD 1e-6 RSCL2 RSOURCE RDSMOD 10.31e-3 RVTO RVTOMOD S1AMOD S1BMOD S2AMOD S2BMOD
12/24/96
LDRAIN RLDRAIN DRAIN RSCL2 RSCL1 GATE LGATE MOS1 RSOURCE RLSOURCE RBREAK RVTO VBAT MOS2 ESCL RDRAIN DBREAK EBREAK
DPLCAP
DBODY
EVTO RGATE
RLGATE
LSOURCE SOURCE
VBAT 0.583 ESCL VALUE .MODEL DBDMOD 3.61e-13 5.06e-3 TRS1 3.05e-3 TRS2 7.57e-6 2.16e-9 2.18e-8) .MODEL DBKMOD 1.66e-1 TRS1 -2.97e-3 TRS2 7.57e-6) .MODEL DPLCAPMOD (CJO 0.96e-9 1e-30 .MODEL MOSMOD NMOS (VTO 2.313 53.82 1e-30 .MODEL RBKMOD (TC1 8.95e-4 -1e-7) .MODEL RDSMOD (TC1 3.82e-3 1.17e-5) .MODEL RSCLMOD (TC1 2.03e-3 0.45e-5) .MODEL RVTOMOD (TC1 -2.27e-3 -5.75e-7) .MODEL S1AMOD VSWITCH (RON 1e-5 ROFF -4.82 VOFF= -2.82) .MODEL S1BMOD VSWITCH (RON 1e-5 ROFF -2.82 VOFF= -4.82) .MODEL S2AMOD VSWITCH (RON 1e-5 ROFF -2.67 VOFF= 2.33) .MODEL S2BMOD VSWITCH (RON 1e-5 ROFF 2.33 VOFF= -2.67) .ENDS NOTE: further discussion PSPICE model, consult PSPICE Sub-Circuit Power MOSFET Featuring Global Temperature Options; written William Hepp Frank Wheatley.
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RFP42N03L, RF1S42N03LSM
Intersil semiconductor products manufactured, assembled tested under ISO9000 quality systems certification.
Intersil semiconductor products sold description only. Intersil Corporation reserves right make changes circuit design and/or specifications time without notice. Accordingly, reader cautioned verify that data sheets current before placing orders. Information furnished Intersil believed accurate reliable. However, responsibility assumed Intersil subsidiaries use; infringements patents other rights third parties which result from use. license granted implication otherwise under patent patent rights Intersil subsidiaries.
information regarding Intersil Corporation products, site http://www.intersil.com
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4302.2 42A, 30V, 0.025 Ohm, Logic Level, N-Channel Power MOSFET

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