SHEET SHEET STATUS SHEETS SHEET PREPARED Gary Gross PMIC

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SHEET SHEET STATUS SHEETS SHEET PREPARED Gary Gross PMIC

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REVISIONS DESCRIPTION Updated boilerplate. Added device types CAGE 65342 source those devices. Added package "Y". Updated Table Table IIB, truth table output load circuits device types. DATE (YR-MO-DA) 97-11-20 APPROVED Raymond Monnin
SHEET SHEET STATUS SHEETS SHEET
PREPARED Gary Gross
PMIC
DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 42316-5000
STANDARD MICROCIRCUIT DRAWING
THIS DRAWING AVAILABLE DEPARTMENTS AGENCIES DEPARTMENT DEFENSE
CHECKED Jeff Bowling
APPROVED Monnin
MICROCIRCUIT, MEMORY, DIGITAL, CMOS, RADIATIONHARDENED, 8-BIT PROM, MONOLITHIC SILICON
DRAWING APPROVAL DATE 96-09-06 SIZE CAGE CODE REVISION LEVEL
SHEET
67268
5962-96891
AMSC
DSCC FORM 2233 DISTRIBUTION STATEMENT Approved public release; distribution unlimited.
5962-E258-97
SCOPE Scope. This drawing documents product assurance class levels consisting high reliability (device classes space application (device class choice case outlines lead finishes available reflected Part Identifying Number (PIN). When available, choice Radiation Hardness Assurance (RHA) levels reflected PIN. PIN. shall shown following example:
5962 Federal stock class designator
designator (see 1.2.1)
96891
Device type (see 1.2.2)
Device class designator (see 1.2.3)
Case outline (see 1.2.4)
Lead finish (see 1.2.5)
Drawing number 1.2.1 designator. Device classes marked devices meet MIL-PRF-38535 specified levels marked with appropriate designator. Device class marked devices meet MIL-PRF-38535, appendix specified levels marked with appropriate designator. dash indicates non-RHA device. 1.2.2 Device types. device types shall identify circuit function follows: Device type Generic number 2568C 2568T 28F256 28F256 Circuit function 8-bit radiation hardened PROM (CMOS inputs) 8-bit radiation hardened PROM (TTL inputs) 8-bit radiation hardened PROM (TTL inputs) 8-bit radiation hardened PROM (TTL inputs) Access time
1.2.3 Device class designator. device class designator shall single letter identifying product assurance level follows: Device class Device requirements documentation Vendor self-certification requirements MIL-STD-883 compliant, non-JAN class level microcircuits accordance with MIL-PRF-38535, appendix Certification qualification MIL-PRF-38535
1.2.4 Case outline(s). case outline(s) shall designated MIL-STD-1835 follows: Outline letter Descriptive designator CDFP3-F28 CDIP2-T28 Terminals Package style Flat pack Dual-in-line
1.2.5 Lead finish. lead finish specified MIL-PRF-38535 device classes MIL-PRF-38535, appendix device class Device available unprogrammed state only. Generic numbers listed Standard Microcircuit Drawing Source Approval Bulletin this document will also listed QML-38535 MIL-HDBK-103 (see herein). SIZE STANDARD MICROCIRCUIT DRAWING DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 42316-5000
DSCC FORM 2234
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Absolute maximum ratings. Supply voltage range Voltage with respect ground Maximum power dissipation Lead temperature (soldering, seconds maximum) Thermal resistance, junction-to-case Junction temperature Storage temperature range Temperature under bias Recommended operating conditions. Supply voltage (VDD Ground voltage (GND) Input high voltage (VIH Device Device Device Input voltage (VIL Device Device Case operating temperature range Radiation features: Total dose irradiation, Device Device Single event phenomenon (SEP) effective linear energy threshold (LET) with upsets, Device Device Neutron irradiation Digital logic testing device classes Fault coverage measurement manufacturing logic tests (MIL-STD-883, test method 5012) percent APPLICABLE DOCUMENTS Government specification, standards, handbooks. following specification, standards, handbooks form part this drawing extent specified herein. Unless otherwise specified, issues these documents those listed issue Department Defense Index Specifications Standards (DoDISS) supplement thereto, cited solicitation. SPECIFICATION DEPARTMENT DEFENSE MIL-PRF-38535 Integrated Circuits, Manufacturing, General Specification for. STANDARDS DEPARTMENT DEFENSE MIL-STD-883 Test Methods Procedures Microelectronics. MIL-STD-973 Configuration Management. MIL-STD-1835 Microcircuit Case Outlines. Stresses above absolute maximum rating cause permanent damage device. Extended operation maximum levels degrade performance affect reliability. Guaranteed, tested. +4.5 +5.5 +3.5 minimum +2.2 minimum +2.4 minimum +1.5 maximum +0.8 maximum -55(C +125(C KRads(Si) MRads(Si) MEV-cm2/mg MEV-cm2/mg 1014 neutrons/cm2 -0.5 +7.0 -0.5 +0.5 +260(C MIL-STD-1835 +175(C -65(C +150(C -55(C +125(C
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HANDBOOKS DEPARTMENT DEFENSE MIL-HDBK-103 MIL-HDBK-780 List Standard Microcircuit Drawings (SMD's). Standard Microcircuit Drawings.
(Unless otherwise indicated, copies specification, standards, handbooks available from Standardization Document Order Desk, Robbins Avenue, Building Philadelphia, 19111-5094.) Non-Government publications. following document(s) form part this document extent specified herein. Unless otherwise specified, issues documents which adopted those listed issue DODISS cited solicitation. Unless otherwise specified, issues documents listed DODISS issues documents cited solicitation. AMERICAN SOCIETY TESTING MATERIALS (ASTM) ASStandard F1192-88 Standard Guide Measurement Single Event Phenomena from Heavy Irradiation Semiconductor Devices.
(Applications copies ASpublications should addressed American Society Testing Materials, 1916 Race Street, Philadelphia, 19103.) ELECTRONICS INDUSTRIES ASSOCIATION (EIA) JEDEC Standard Standardized Test Procedure Characterization Latch-up CMOS Integrated Circuits.
(Applications copies should addressed Electronics Industries Association, 2500 Wilson Blvd., Arlington, 22201.) (Non-Government standards other publications normally available from organizations that prepare distribute documents. These documents also available through libraries other informational services.) Order precedence. event conflict between text this drawing references cited herein, text this drawing shall take precedence. Nothing this document, however, supersedes applicable laws regulations unless specific exemption been obtained.
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REQUIREMENTS Item requirements. individual item requirements device classes shall accordance with MIL-PRF38535 specified herein modified device manufacturer's Quality Management (QM) plan. modification plan shall affect form, fit, function described herein. individual item requirements device class shall accordance with MIL-PRF-38535, appendix non-JAN class level devices specified herein. Design, construction, physical dimensions. design, construction, physical dimensions shall specified MIL-PRF-38535 herein device classes MIL-PRF-38535, appendix herein device class 3.2.1 Case outlines. case outlines shall accordance with 1.2.4 herein. 3.2.2 Terminal connections. terminal connections shall specified figure 3.2.3 Truth table. truth table shall specified figure 3.2.3.1 Unprogrammed devices. truth table unprogrammed devices shall specified figure When required screening (see herein) qualification conformance inspection, groups (see 4.4), devices shall programmed manufacturer prior test. minimum percent total number cells shall programmed. 3.2.3.2 Programmed devices. requirements supplying programmed devices part this drawing. 3.2.4 test circuit. test circuit shall specified figure 3.2.5 Read cycle waveforms. read cycle waveforms shall specified figure 3.2.6 Radiation exposure circuit. radiation exposure circuit shall specified figure Electrical performance characteristics postirradiation parameter limits. Unless otherwise specified, electrical performance characteristics, postirradiation parameter limits specified table shall apply over full case operating temperature range. Electrical test requirements. electrical test requirements shall subgroups specified table IIA. electrical tests each subgroup defined table Marking. part shall marked with listed herein. addition, manufacturer's also marked listed MIL-HDBK-103. packages where marking entire number feasible space limitations, manufacturer option marking "5962-" device. product using this option, designator shall still marked. Marking device classes shall accordance with MIL-PRF-38535. Marking device class shall accordance with MIL-PRF-38535, appendix 3.5.1 Certification/compliance mark. certification mark device classes shall "QML" required MIL-PRF-38535. compliance mark device class shall required MIL-PRF-38535, appendix Certificate compliance. device classes certificate compliance shall required from QML-38535 listed manufacturer order supply requirements this drawing (see 6.6.1 herein). device class certificate compliance shall required from manufacturer order listed approved source supply MIL-HDBK-103 (see 6.6.2 herein). certificate compliance submitted DSCC-VA prior listing approved source supply this drawing shall affirm that manufacturer's product meets, device classes requirements MIL-PRF-38535 herein device class requirements MIL-PRF-38535, appendix herein. Certificate conformance. certificate conformance required device classes MIL-PRF-38535 device class MIL-PRF-38535, appendix shall provided with each microcircuits delivered this drawing. Notification change device class device class notification DSCC-VA change product (see herein) involving devices acquired this drawing required change defined MIL-STD-973. SIZE STANDARD MICROCIRCUIT DRAWING DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 42316-5000
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TABLE Electrical performance characteristics. Test Symbol Conditions -55(C +125(C unless otherwise specified M,D,L,R,F,G,H Output voltage VOL2 200µA M,D,L,R,F,G,H Output high voltage VOH1 -200µA Group subgroups Device type Limits 02,03,04 M,D,L,R,F,G,H Input leakage current IILK M,D,L,R,F,G,H Three-state output leakage current Input capacitance IOLK VOUT M,D,L,R,F,G,H 4.5V 4.4.1c capacitance CI/O 01,02 03,04 01,02 03,04 Functional tests 4.4.1d M,D,L,R,F,G,H footnotes table. SIZE STANDARD MICROCIRCUIT DRAWING DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 42316-5000
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Unit
Output voltage
VOL1
VOH2
-2.0mA
01,02 03,04
M,D,L,R,F,G,H Input voltage CMOS inputs Input voltage inputs High-level input voltage CMOS inputs High-level input voltage inputs VIL1 M,D,L,R,F,G,H VIL2 M,D,L,R,F,G,H VIH1 M,D,L,R,F,G,H VIH2
7,8A,8B
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TABLE Electrical performance characteristics. Test Symbol Conditions -55(C +125(C unless otherwise specified CMOS input input M,D,L,R,F,G,H
VDD, CMOS input
0.5, CMOS input M,D,L,R,F,G,H figure 1/tAVAV (min) output load Group subgroups Device type Limits 01,02 03,04 01,02 03,04 01,02,03 M,D,L,R,F,G,H Address access time tAVQV M,D,L,R,F,G,H
access time tELQV M,D,L,R,F,G,H
access time tGLQV M,D,L,R,F,G,H
output active
output active Output hold time
output disable
controlled output tri-state time tELQX M,D,L,R,F,G,H tGLQX M,D,L,R,F,G,H tAXQX M,D,L,R,F,G,H tEHQZ M,D,L,R,F,G,H tGHQZ M,D,L,R,F,G,H 01,02,03 01,02,03 01,02 03,04 Unit
Operating supply current Standby supply current
IDD1
IDD2
Read cycle time
tAVAV
When performing postirradiation electrical measurements level +25(C. Limits shown guaranteed +25(C. test condition column postirradiation limits device types specified device types column. Preirradiation values marked devices shall also postirradiation values, unless otherwise specified. Measured only initial qualification after process design changes that could affect input/output capacitance. Test conditions assume input pulse levels VDD, input rise fall times ns/volt, input output timing reference levels (except tri-state parameters) input output timing reference levels tri-state parameters VDD-0.5 SIZE STANDARD MICROCIRCUIT DRAWING DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 42316-5000
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Device types Case outlines Terminal number
Terminal symbol
device types replaced FIGURE Terminal connections.
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Read modes device types Mode Read Tristate Standby Standby Program
High
High High 0.5V Data-out High-Z High-Z High-Z Data-in Power Active Active Standby1 Standby2 Programming
High: inputs; CMOS inputs. Low: inputs; CMOS inputs. Minimum drawn when Standby mode implemented with
(standby1 power).
don't care inputs VIH. Read modes device types Mode Standby Read Program Read
High
High High High High High High-Z Data-out Data-in High-Z
High: inputs. Low: inputs. don't care inputs VIH. Device active; outputs disabled.
FIGURE Truth tables.
Device
NOTE: Measurement data output occurs midpoint
Device
FIGURE Output load circuits equivalent switching waveform.
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FIGURE Read cycle waveform.
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FIGURE Irradiation circuit.
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Verification review device class device class DSCC, DSCC's agent, acquiring activity retain option review manufacturer's facility applicable required documentation. Offshore documentation shall made available onshore option reviewer. 3.10 Microcircuit group assignment device class Device class devices covered this drawing shall microcircuit group number (see MIL-PRF-38535, appendix 3.10.1 Unprogrammed device delivered user. testing shall verified through group testing defined 3.2.3.1 table recommended that users perform subgroups after programming verify specific program configuration. QUALITY ASSURANCE PROVISIONS Sampling inspection. device classes sampling inspection procedures shall accordance with MIL-PRF-38535 modified device manufacturer's Quality Management (QM) plan. modification plan shall affect form, fit, function described herein. device class sampling inspection procedures shall accordance with MIL-PRF-38535, appendix Screening. device classes screening shall accordance with MIL-PRF-38535, shall conducted devices prior qualification technology conformance inspection. device class screening shall accordance with method 5004 MIL-STD-883, shall conducted devices prior quality conformance inspection. 4.2.1 Additional criteria device class Delete sequence specified initial (preburn-in) electrical parameters through interim (postburn-in) electrical parameters method 5004 substitute lines through table herein. test circuit shall maintained manufacturer under document revision level control shall made available preparing acquiring activity upon request. test circuit shall specify inputs, outputs, biases, power dissipation, applicable, accordance with intent specified test method 1015. Dynamic burn-in (method 1015 MIL-STD-883, test condition circuit, 4.2.1b herein). Interim final electrical parameters shall specified table herein.
4.2.2 Additional criteria device classes burn-in test duration, test condition test temperature, approved alternatives shall specified device manufacturer's plan accordance with MIL-PRF-38535. burn-in test circuit shall maintained under document revision level control device manufacturer's Technology Review Board (TRB) accordance with MIL-PRF-38535 shall made available acquiring preparing activity upon request. test circuit shall specify inputs, outputs, biases, power dissipation, applicable, accordance with intent specified test method 1015 MIL-STD-883. Interim final electrical test parameters shall specified table herein. Additional screening device class beyond requirements device class shall specified MIL-PRF-38535, appendix
Qualification inspection device classes Qualification inspection device classes shall accordance with MIL-PRF-38535. Inspections performed shall those specified MIL-PRF-38535 herein groups inspections (see 4.4.1 through 4.4.4). Conformance inspection. Technology conformance inspection classes shall accordance with MIL-PRF38535 including groups inspections specified herein except where option MIL-PRF-38535 permits alternate in-line control testing. Quality conformance inspection device class shall accordance with MIL-PRF-38535, appendix specified herein. Inspections performed device class shall those specified method 5005 MIL-STD-883 herein groups inspections (see 4.4.1 through 4.4.4).
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4.4.1 Group inspection. Tests shall specified table herein. Subgroups table method 5005 MIL-STD-883 shall omitted. Subgroup (CIN COUT measurements) shall measured only initial qualification after process design changes which affect input output capacitance. Capacitance shall measured between designated terminal frequency MHz. Sample size devices with failures, input output terminals tested. device class subgroups tests shall sufficient verify truth table. device classes subgroups shall include verifying functionality device; these tests shall have been fault graded accordance with MIL-STD-883, test method 5012 (see herein). Devices shall tested programmability performance compliance requirements group subgroups Either techniques acceptable: Testing entire using additional built-in test circuitry which allows manufacturer verify programmability performance without programming user array. this done, resulting test patterns shall verified devices during subgroups group testing accordance with sampling plan specified MIL-STD-883, method 5005. such compliance cannot tested unprogrammed device, sample shall selected satisfy programmability requirements prior performing subgroups Twelve devices shall submitted programming (see 3.2.3.2). more than devices fail program, shall rejected. manufacturer's option, sample increased total devices with more than total device failures allowable. devices from programmability sample shall submitted requirements group subgroups more than devices fail, shall rejected. manufacturer's option, sample increased total devices with more than total device failures allowable. (latch-up) tests shall measured only initial qualification after design process changes which affect performance device. device class procedures circuits shall maintained under document revision level control manufacturer shall made available preparing activity acquiring activity upon request. device classes procedures circuits shall under control device manufacturer's accordance with MIL-PRF-38535 shall made available preparing activity acquiring activity upon request. Testing shall pins, five devices with zero failures. Latch-up test shall considered destructive. Information contained JEDEC Standard number used reference. 4.4.2 Group inspection. group inspection end-point electrical parameters shall specified table herein. 4.4.2.1 Additional criteria device class Steady-state life test conditions, method 1005 MIL-STD-883: Test condition test circuit shall maintained manufacturer under document revision level control shall made available preparing acquiring activity upon request. test circuit shall specify inputs, outputs, biases, power dissipation, applicable, accordance with intent specified test method 1005. +125(C, minimum. Test duration: 1,000 hours, except permitted method 1005 MIL-STD-883.
4.4.2.2 Additional criteria device classes steady-state life test duration, test condition test temperature, approved alternatives shall specified device manufacturer's plan accordance with MIL-PRF-38535. test circuit shall maintained under document revision level control device manufacturer's accordance with MILPRF-38535 shall made available acquiring preparing activity upon request. test circuit shall specify inputs, outputs, biases, power dissipation, applicable, accordance with intent specified test method 1005 MILSTD-883. SIZE STANDARD MICROCIRCUIT DRAWING DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 42316-5000
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4.4.3 Group inspection. group inspection, end-point electrical parameters shall specified table herein. 4.4.4 Group inspection. Group inspection required only parts intended marked radiation hardness assured (see herein). levels device classes shall specified MIL-PRF-38535. End-point electrical parameters shall specified table herein. 4.4.4.1 Total dose irradiation testing. Total dose irradiation testing shall performed accordance with MIL-STD-883 method 1019 specified herein. 4.4.4.1.1 Accelerated aging test. Accelerated aging tests shall performed devices requiring level greater than rads(Si). post-anneal end-point electrical parameter limits shall specified table herein shall preirradiation end-point electrical parameter limit 25(C ±5(C. Testing shall performed initial qualification after design process changes which affect response device. 4.4.4.2 Single event phenomena (SEP). testing shall required class devices (see herein). testing shall performed technology process Standard Evaluation Circuit (SEC) alternate test vehicle approved qualifying activity inital qualification after design process changes which affect upset latchup characteristics. recommended test conditions follows: beam angle incidence shall between normal surface normal, inclusive (i.e. angle 60(). shadowing beam fixturing package related effects allowed. fluence shall errors ions/cm2. flux shall between ions/cm2/s. cross-section shall verified flux independent measuring cross-section flux rates which differ least order magnitude. particle range shall microns silicon. test temperature shall maximum rated operating temperature Bias conditions shall defined manufacturer latchup measurements. Test four devices with zero failures.
4.4.4.3 Additional information. copy following additional data shall maintained available from device manufacturer: upset levels. Test conditions (SEP). Number upsets (SEP). Number transients (SEP). Occurence latchup (SEP).
Programming procedure. programming procedures shall specified device manufacturer shall made available upon request. Delta measurements device class Delta measurements, specified table IIA, shall made recorded before after required burn-in screens steady-state life tests determine delta compliance. electrical parameters measured, with associated delta limits listed table IIB. device manufacturer may, option, either perform delta measurements within hours after burn-in perform final electrical parameter tests, subgroups
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Table IIA. Elecrtical test requirements. Line Test requirements Subgroups (per method 5005, table Device class Interim electrical parameters (see 4.2) Static burn-in method 1015 Same line Dynamic burn-in (method 1015) Same line Final electrical parameters Group test requirements Group end-point electrical parameters Group end-point electrical parameters Group end-point electrical parameters 1*,2,3,7*, 8A,8B,9,10, 1,2,3,4**,7, 8A,8B,9,10, 1,2,3,7, 8A,8B 1,7,9 1*,2,3,7*, 8A,8B,9,10, 1,2,3,4**,7, 8A,8B,9,10, 1,2,3,7, 8A,8B 1,7,9 Required Required 1,7,9 Subgroups (per MIL-PRF-38535, table III) Device class 1,7,9 Device class 1,7,9
required
required
required 1*,7* Required 1*,7* 1*,2,3,7*, 8A,8B,9,10, 1,2,3,4**,7, 8A,8B,9,10, 1,2,3,7, 8A,8B,9,10, 1,7,9
1,7,9
1,7,9
1,7,9
Blank spaces indicate test applicable. subgroups combined when using high-speed testers. Subgroups functional tests shall verify truth table. Indicates applies subgroups 4.4.1c. Indicates delta limit (see table IIB) shall required where specified, delta values shall computed with reference zero hour electrical parameters (see table IIA). 4.4.1f.
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Table IIB. Delta limits +25(C. Test IDD1 IDD2 Device types Delta limits +10% specified value table +10% specified value table
above parameter shall recorded before after required burn-in life tests determine delta. devices tested below 10µA, deltas required. PACKAGING Packaging requirements. requirements packaging shall accordance with MIL-PRF-38535 device classes MIL-PRF-38535, appendix device class NOTES Intended use. Microcircuits conforming this drawing intended government microcircuit applications (original equipment), design applications, logistics purposes. 6.1.1 Replaceability. Microcircuits covered this drawing will replace same generic device covered contractor-prepared specification drawing. 6.1.2 Substitutability. Device class devices will replace device class devices. Configuration control SMD's. proposed changes existing SMD's will coordinated with users record individual documents. This coordination will accomplished accordance with MIL-STD-973 using Form 1692, Engineering Change Proposal (Short Form). Record users. Military industrial users shall inform Defense Supply Center Columbus when system application requires configuration control which SMD's applicable that system. DSCC will maintain record users this list will used coordination distribution changes drawings. Users drawings covering microelectronics devices (FSC 5962) should contact DSCC-VA, telephone (614) 692-0525. Comments. Comments this drawing should directed DSCC-VA, Columbus, Ohio 43216-5000, telephone (614) 692-0674. Symbols, definitions, definitions. abbreviations, symbols, definitions used herein defined MIL-PRF-38535, MIL-STD-1331, follows: COUT Input terminal capacitance. Output terminal capacitance. Ground zero voltage potential. Supply current. Input current. Output current. Case temperature. Positive supply voltage.
6.5.1 Timing limits. table timing values shows either minimum maximum limit each parameter. Input requirements specified from external system point view. example, address setup time would shown minimum since system must supply least that much time (even though most devices require it). other hand, responses from memory specified from device point view. example, access time would shown maximum since device never provides data later than that time. SIZE STANDARD MICROCIRCUIT DRAWING DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 42316-5000
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6.5.2 Waveforms.
Waveform symbol
Input MUST VALID CHANGE FROM CHANGE FROM DON'T CARE CHANGE PERMITTED
Output WILL VALID WILL CHANGE FROM WILL CHANGE FROM CHANGING STATE UNKNOWN HIGH IMPEDANCE
Sources supply. 6.6.1 Sources supply device classes Sources supply device classes listed QML-38535. vendors listed QML-38535 have submitted certificate compliance (see herein) DSCC-VA have agreed this drawing. 6.6.2 Approved sources supply device class Approved sources supply class listed MIL-HDBK-103. vendors listed MIL-HDBK-103 have agreed this drawing certificate compliance (see herein) been submitted accepted DSCC-VA.
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STANDARD MICROCIRCUIT DRAWING SOURCE APPROVAL BULLETIN DATE: 97-11-20 Approved sources supply 5962-96891 listed below immediate acquisition only shall added QML-38535 MIL-HDBK-103 during next revision. QML-38535 MIL-HDBK-103 will revised include addition deletion sources. vendors listed below have agreed this drawing certificate compliance been submitted accepted DSCC-VA. This bulletin superseded next dated revision QML-38535 MIL-HDBK-103.
Standard microcircuit drawing 5962R9689101QXC 5962R9689101VXC 5962R9689102QXC 5962R9689102VXC 5962H9689103QXA 5962H9689103VXA 5962H9689103QXC 5962H9689103VXC 5962H9689103QYA 5962H9689103VYA 5962H9689103QYC 5962H9689103VYC 5962H9689104QXA 5962H9689104VXA 5962H9689104QXC 5962H9689104VXC 5962H9689104QYA 5962H9689104VYA 5962H9689104QYC 5962H9689104VYC
Vendor CAGE number 52088 52088 52088 52088 65342 65342 65342 65342 65342 65342 65342 65342 65342 65342 65342 65342 65342 65342 65342 65342
Vendor similar LMP2568C-Q45X LMP2568C-V45X LMP2568T-Q45X LMP2568T-V45X UT28F256T-45UCAH UT28F256T-45UCAH UT28F256T-45UCCH UT28F256T-45UCCH UT28F256T-45PCAH UT28F256T-45PCAH UT28F256T-45PCCH UT28F256T-45PCCH UT28F256T-40UCAH UT28F256T-40UCAH UT28F256T-40UCCH UT28F256T-40UCCH UT28F256T-40PCAH UT28F256T-40PCAH UT28F256T-40PCCH UT28F256T-40PCCH
lead finish shown each representing hermetic package most readily available from manufacturer listed that part. desired lead finish listed, contact Vendor determine availability. Caution. this number item acquisition. Items acquired this number satisfy performance requirements this drawing.
STANDARD MICROCIRCUIT DRAWING SOURCE APPROVAL BULLETIN continued.
Vendor CAGE number 52088
Vendor name address Lockheed Martin Federal Systems, Incorporated 9500 Godwin Drive Manassas, 22110-4104
65342
UTMC Microelectronics Systems Incorporated 4350 Centennial Boulevard Colorado Springs, Colorado 80907-3486
information contained herein disseminated convenience only Government assumes liability whatsoever inaccuracies this information bulletin.

SHEET SHEET STATUS SHEETS SHEET PREPARED Gary Gross PMIC

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