-10A, -150V, 0.500 Ohm, P-Channel Power MOSFET This P-Channel enh

The Datasheet Archive - 100 Million Datasheets from 7500 Manufacturers.

-10A, -150V, 0.500 Ohm, P-Channel Power MOSFET This P-Channel enh

Datasheet Thumbnail

Top Searches for this datasheet

RFP10P15
-10A, -150V, 0.500 Ohm, P-Channel Power MOSFET
This P-Channel enhancement mode silicon gate power field effect transistor designed applications such switching regulators, switching convertors, motor drivers, relay drivers, drivers high power bipolar switching transistors requiring high speed gate drive power. These types operated directly from integrated circuits. Formerly developmental type TA9404.
Features
-10A, -150V rDS(ON) 0.500 Power Dissipation Limited Nanosecond Switching Speeds Linear Transfer Characteristics High Input Impedance Majority Carrier Device Related Literature TB334 "Guidelines Soldering Surface Mount Components Boards"
Ordering Information
PART NUMBER RFP10P15 PACKAGE TO-220AB BRAND RFP10P15
Symbol
NOTE: When ordering, include entire part number.
Packaging
TO-220AB
DRAIN (TAB)
SOURCE DRAIN GATE
CAUTION: These devices sensitive electrostatic discharge; follow proper Handling Procedures. 407-727-9207 Copyright Intersil Corporation 1999
RFP10P15
Absolute Maximum Ratings
25oC, Unless Otherwise Specified RFP10P15 -150 -150 UNITS W/oC
Drain Source Voltage (Note Drain Gate Voltage (RGS (Note VDGR Continuous Drain Current Pulsed Drain Current (Note .IDM Gate Source Voltage Maximum Power Dissipation Linear Derating Factor Operating Storage Temperature TSTG Maximum Temperature Soldering Leads 0.063in (1.6mm) from Case 10s. Package Body 10s, Techbrief (for TO-220) Tpkg
CAUTION: Stresses above those listed "Absolute Maximum Ratings" cause permanent damage device. This stress only rating operation device these other conditions above those indicated operational sections this specification implied.
NOTE: 25oC 150oC.
Electrical Specifications
PARAMETER
25oC, Unless Otherwise Specified SYMBOL BVDSS VGS(TH) IDSS CONDITIONS 250µA, VDS, 250µA Rated BVDSS, Rated BVDSS, 125oC -150 -25V 1MHz (Figure RFM10P12, RFM10P15 RFP10P12, RFP10P15 ±100 -5.0 0.500 1700 1.25 1.67 UNITS
oC/W oC/W
Drain Source Breakdown Voltage Gate Threshold Voltage Zero Gate Voltage Drain Current
Gate Source Leakage Current Drain Source Voltage (Note Drain Source Resistance (Note Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Thermal Resistance, Junction Case
IGSS VDS(ON) rDS(ON) td(ON) td(OFF) CISS COSS CRSS
±20V, 10A, -10V 10A, -10V, (Figures 10A, -75V, 7.5, -10V (Figures
Source Drain Diode Specifications
PARAMETER Source Drain Diode Voltage (Note Reverse Recovery Time NOTES: Pulsed: Pulse Duration 300µs Max, Duty Cycle Repetitive rating: pulse width limited maximum junction temperature. SYMBOL TEST CONDITIONS -10A -10A, dlSD/dt 100A/µs UNITS
RFP10P15 Typical Performance Curves
POWER DISSIPATION MULTIPLIER DRAIN CURRENT RFP10P12, RFP10P15 RFM10P12, RFM10P15
CASE TEMPERATURE (oC)
CASE TEMPERATURE (oC)
FIGURE NORMALIZED POWER DISSIPATION CASE TEMPERATURE
FIGURE MAXIMUM CONTINUOUS DRAIN CURRENT CASE TEMPERATURE
OPERATION THIS AREA LIMITED rDS(ON) DRAIN CURRENT CONTINUOUS
RATED 25oC DRAIN CURRENT
PULSE DURATION 80µs 25oC -10V
-20V
RFM10P12, RFP10P12 RFM10P15, RFP10P15
-100 VDS, DRAIN SOURCE VOLTAGE
-1000
VDS, DRAIN SOURCE VOLTAGE
FIGURE FORWARD BIAS SAFE OPERATING AREA
FIGURE SATURATION CHARACTERISTICS
ID(ON), STATE DRAIN CURRENT
-10V PULSE DURATION 80µs
25oC -40oC rDS(ON), DRAIN SOURCE RESISTANCE DRAIN CURRENT 25oC -40oC 125oC -10V PULSE DURATION 80µs
125oC 125oC -40oC VGS, GATE SOURCE VOLTAGE
FIGURE TRANSFER CHARACTERISTICS
FIGURE DRAIN SOURCE RESISTANCE DRAIN CURRENT
RFP10P15 Typical Performance Curves
-10A NORMALIZED DRAIN SOURCE RESISTANCE THRESHOLD VOLTAGE NORMALIZED GATE JUNCTION TEMPERATURE (oC)
(Continued)
250µA
JUNCTION TEMPERATURE (oC)
FIGURE NORMALIZED DRAIN SOURCE RESISTANCE JUNCTION TEMPERATURE
1600 1400 CAPACITANCE (pF) 1200 1000 CRSS COSS CISS DRAIN SOURCE VOLTAGE 1MHz CISS CRSS COSS
FIGURE NORMALIZED GATE THRESHOLD VOLTAGE JUNCTION TEMPERATURE
BVDSS GATE SOURCE VOLTAGE IG(REF) 0.84mA -10V 0.75BVDSS 0.50BVDSS 0.25BVDSS BVDSS GATE SOURCE VOLTAGE
112.5
37.5 DRAIN SOURCE VOLTAGE IG(REF) IG(ACT) TIME (µs) IG(REF) IG(ACT)
VDS, DRAIN SOURCE VOLTAGE
NOTE: FIGURE CAPACITANCE DRAIN SOURCE VOLTAGE
Refer Intersil Applications Notes AN7254 AN7260
FIGURE NORMALIZED SWITCHING WAVEFORMS CONSTANT GATE CURRENT
Test Circuits Waveforms
td(ON) tOFF td(OFF)
PULSE WIDTH
FIGURE SWITCHING TIME TEST CIRCUIT
FIGURE RESISTIVE SWITCHING WAVEFORMS
RFP10P15
Intersil semiconductor products manufactured, assembled tested under ISO9000 quality systems certification.
Intersil semiconductor products sold description only. Intersil Corporation reserves right make changes circuit design and/or specifications time without notice. Accordingly, reader cautioned verify that data sheets current before placing orders. Information furnished Intersil believed accurate reliable. However, responsibility assumed Intersil subsidiaries use; infringements patents other rights third parties which result from use. license granted implication otherwise under patent patent rights Intersil subsidiaries. information regarding Intersil Corporation products, site www.intersil.com
Sales Office Headquarters
NORTH AMERICA Intersil Corporation 883, Mail Stop 53-204 Melbourne, 32902 TEL: (407) 724-7000 FAX: (407) 724-7240 EUROPE Intersil Mercure Center 100, Fusee 1130 Brussels, Belgium TEL: (32) 2.724.2111 FAX: (32) 2.724.22.05 ASIA Intersil (Taiwan) Ltd. 7F-6, Hsing North Road Taipei, Taiwan Republic China TEL: (886) 2716 9310 FAX: (886) 2715 3029

-10A, -150V, 0.500 Ohm, P-Channel Power MOSFET This P-Channel enh

Top Searches for this datasheet

Other recent searches