Silicon triple diffusion planar type Darlington midium speed powe

The Datasheet Archive - 100 Million Datasheets from 7500 Manufacturers.

Silicon triple diffusion planar type Darlington midium speed powe

Datasheet Thumbnail

Top Searches for this datasheet

2SD1262, 2SD1262A
Silicon triple diffusion planar type Darlington
midium speed power switching Complementary 2SB939 2SB939A
10.0±0.3
Unit:
8.5±0.2 6.0±0.5 3.4±0.3 1.0±0.1
Features
High foward current transfer ratio High-speed switching type package enabling direct soldering radiating printed circuit board, etc. small electronic equipment. (TC=25°C)
Ratings +150 Unit
1.5±0.1
1.5max.
10.5min.
1.1max.
0.8±0.1
0.5max.
2.54±0.3 5.08±0.5
Absolute Maximum Ratings
Parameter Collector base voltage Collector 2SD1262 2SD1262A 2SD1262 Symbol VCBO VCEO VEBO Tstg
1:Base 2:Collector 3:Emitter Type Package Unit:
3.4±0.3 1.0±0.1
8.5±0.2 6.0±0.3
10.0±0.3
emitter voltage 2SD1262A Emitter base voltage Peak collector current Collector current Collector power TC=25°C dissipation Ta=25°C Junction temperature Storage temperature
1.5-0.4 3.0-0.2
4.4±0.5
0.8±0.1 2.54±0.3
R0.5 R0.5 max.
5.08±0.5
1:Base 2:Collector 3:Emitter Type Package (DS)
Electrical Characteristics
Parameter Collector cutoff current Emitter cutoff current Collector emitter voltage 2SD1262 2SD1262A
(TC=25°C)
Symbol ICBO IEBO VCEO hFE1* hFE2 VCE(sat) VBE(sat) tstg Conditions 60V, 80V, 30mA, 10V, 0.5A, 1MHz 8mA, -8mA, 1000 10000 Unit
Forward current transfer ratio Collector emitter saturation voltage Base emitter saturation voltage Transition frequency Turn-on time Storage time Fall time
Rank classification
1000 2500 2000 5000 4000 10000
Internal Connection
Rank hFE1
4.4±0.5
14.7±0.5
+0.4
TC=Ta With heat sink Without heat sink (PC=1.3W) TC=25°C
2SD1262, 2SD1262A
Collector emitter saturation voltage VCE(sat)
VCE(sat)
IC/IB=250 IC/IB=500 IC/IB=1000 TC=25°C
Collector power dissipation
Collector current
IB=4.0mA 3.5mA 3.0mA 2.5mA 2.0mA 1.5mA 1.0mA 0.5mA
0.03
0.01
Ambient temperature (°C)
Collector emitter voltage
Collector current
VCE(sat)
Collector emitter saturation voltage VCE(sat)
IC/IB=500 TC=100°C 25°C -25°C
VBE(sat)
100000
IC/IB=500 VCE=3V
Base emitter saturation voltage VBE(sat)
Forward current transfer ratio
30000
TC=100°C 25°C -25°C
TC=-25°C 100°C 25°C
10000
3000 1000
0.03
0.03
0.01
0.01
Collector current
Collector current
Collector current
Area safe operation (ASO)
repetitive pulse TC=25°C 0.03 0.01 300ms t=10ms
Rth(t)
Without heat sink With heat sink
Thermal resistance Rth(t) (°C/W)
Collector current
2SD1262A
2SD1262
10-1
1000
10-2 10-4
10-3
10-2
10-1
Collector emitter voltage
Time

Silicon triple diffusion planar type Darlington midium speed powe

Top Searches for this datasheet

Other recent searches