Features on-resistance High speed switching drive current Built-i
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Top Searches for this datasheet
2SK1519, 2SK1520
Features
on-resistance High speed switching drive current Built-in fast recovery diode (trr Suitable motor control, switching regulator, DC-DC converter
Outline
TO-3PL
Gate Drain Source
2SK1519, 2SK1520
Absolute Maximum Ratings 25°C)
Item Drain source voltage 2SK1519 2SK1520 Gate source voltage Drain current Drain peak current Body drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes: duty cycle Value 25°C VGSS D(pulse)* Pch* Tstg
Symbol VDSS
Ratings +150
Unit
2SK1519, 2SK1520
Electrical Characteristics 25°C)
Item Drain source breakdown voltage Symbol 2SK1519 V(BR)DSS 2SK1520 V(BR)GSS ±100 VGS(off) |yfs| Ciss Coss Crss d(on) d(off) 0.11 0.12 5800 1550 0.15 0.16 diF/dt A/µs Unit Test conditions
Gate source breakdown voltage Gate source leak current Zero gate voltage drain current
2SK1519 2SK1520
Gate source cutoff voltage
Static Drain source 2SK1519 RDS(on) state resistance 2SK1520
Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Body drain diode forward voltage Body drain diode reverse recovery time Note: Pulse test
2SK1519, 2SK1520
Power Temperature Derating Channel Dissipation 1,000 Drain Current 25°C Case Temperature (°C) 1,000 Drain Source Voltage Maximum Safe Operation Area
(on) limit
2SK1519 2SK1520
Typical Output Characteristics Drain Current Drain Current Pulse Test
Typical Transfer Characteristics Pulse Test
75°C 25°C -25°C
Drain Source Voltage
Gate Source Voltage
2SK1519, 2SK1520
Drain Source Saturation Voltage (on) Drain Source Saturation Voltage Gate Source Voltage Static Drain Source State Resistance (on) Pulse Test Pulse Test Static Drain Source State Resistance Drain Current
0.05 Drain Current
Gate Source Voltage
Static Drain Source State Resistance (on)
Static Drain Source State Resistance Temperature Forward Transfer Admittance Pulse Test
Forward Transfer Admittance Drain Current Pulse Test -25°C 25°C 75°C
Case Temperature (°C)
Drain Current
2SK1519, 2SK1520
Body Drain Diode Reverse Recovery Time 1,000 Reverse Recovery Time (ns) di/dt A/µs, Pulse Test Capacitance (pF) 1,000 Coss 10,000 Ciss Typical Capacitance Drain Source Voltage
Crss
Reverse Drain Current
Drain Source Voltage
Dynamic Input Characteristics 1,000 Drain Source Voltage Gate Source Voltage 1,000 Switching Time (ns)
Switching Characteristics (off)
(on)
Pulse Test
duty Drain Current
Gate Charge (nc)
2SK1519, 2SK1520
Reverse Drain Current Sourse Drain Voltage Reverse Dratin Current Pulse Test
Source Drain Voltage
Normalized Transient Thermal Impedance
Normalized Transient Thermal Impedance Pulse Width 25°C
0.05
ch-c ch-c ch-c 0.625°C/W, 25°C
0.02
0.03
0.01 ulse
Pulse Width
0.01
Switching Time Test Circuit Monitor
Waveforms Vout Monitor
D.U.T
Vout
(off)
(on)
Unit:
20.0
26.0
20.0
+0.25 -0.1 5.45 +0.25 -0.1
5.45
Hitachi Code JEDEC EIAJ Weight (reference value)
TO-3PL
Cautions
Hitachi neither warrants grants licenses rights Hitachi's third party's patent, copyright, trademark, other intellectual property rights information contained this document. Hitachi bears responsibility problems that arise with third party's rights, including intellectual property rights, connection with information contained this document. Products product specifications subject change without notice. Confirm that have received latest product standards specifications before final design, purchase use. Hitachi makes every attempt ensure that products high quality reliability. However, contact Hitachi's sales office before using product application that demands especially high quality reliability where failure malfunction directly threaten human life cause risk bodily injury, such aerospace, aeronautics, nuclear power, combustion control, transportation, traffic, safety equipment medical equipment life support. Design your application that product used within ranges guaranteed Hitachi particularly maximum rating, operating supply voltage range, heat radiation characteristics, installation conditions other characteristics. Hitachi bears responsibility failure damage when used beyond guaranteed ranges. Even within guaranteed ranges, consider normally foreseeable failure rates failure modes semiconductor devices employ systemic measures such failsafes, that equipment incorporating Hitachi product does cause bodily injury, fire other consequential damage operation Hitachi product. This product designed radiation resistant. permitted reproduce duplicate, form, whole part this document without written approval from Hitachi. Contact Hitachi's sales office questions regarding this document Hitachi semiconductor products.
Hitachi, Ltd.
Semiconductor Integrated Circuits. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Tel: Tokyo (03) 3270-2111 Fax: (03) 3270-5109
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Hitachi Semiconductor (America) Inc. East Tasman Drive, Jose,CA 95134 Tel: (408) 433-1990 Fax: <1>(408) 433-0223 Hitachi Europe GmbH Electronic components Group Dornacher D-85622 Feldkirchen, Munich Germany Tel: <49> (89) 9180-0 Fax: <49> (89) Hitachi Europe Ltd. Electronic Components Group. Whitebrook Park Lower Cookham Road Maidenhead Berkshire 8YA, United Kingdom Tel: <44> (1628) 585000 Fax: <44> (1628) 778322 Hitachi Asia Pte. Ltd. Collyer Quay #20-00 Hitachi Tower Singapore 049318 Tel: 535-2100 Fax: 535-1533 Hitachi Asia Ltd. Taipei Branch Office Hung Building. No.167, Tun-Hwa North Road, Taipei (105) Tel: <886> 2718-3666 Fax: <886> 2718-8180 Hitachi Asia (Hong Kong) Ltd. Group (Electronic Components) 7/F., North Tower, World Finance Centre, Harbour City, Canton Road, Tsim Tsui, Kowloon, Hong Kong Tel: <852> 9218 Fax: <852> 0281 Telex: 40815 HITEC
Copyright Hitachi, Ltd., 1999. rights reserved. Printed Japan.
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