03/07/2000 TENTATIVE SP4T SWITCH GaAs MMIC nGENERAL DESCRIPT

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03/07/2000 TENTATIVE SP4T SWITCH GaAs MMIC nGENERAL DESCRIPT

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NJG1519KC1
03/07/2000 TENTATIVE
SP4T SWITCH GaAs MMIC
nGENERAL DESCRIPTION NJG1519KC1 GaAs high power SP4T switch MMIC antenna switch dual mode cellular phone application such GSM/DCS1800. This switch designed antenna switch between antenna ports ports control signals 2.5GHz. ultra small ultra thin FLP10 package applied. nFEATURES lLow insertion loss lHigh isolation lHigh handling power lLow control voltage lUltra small ultra thin package nPACKAGE OUTLINE
NJG1519KC1
0.6dB typ. @f=0.9GHz, Pin=34dBm 0.85dB typ. @f=1.9GHz, Pin=32dBm 24dB typ. @f=0.9GHz 18dB typ. @f=1.9GHz P-0.2dB=35dBm typ. @f=1.9GHz VCTL (H)=3.0V typ. FLP10-C1 (Mount Size: 2.8x3.0x0.75mm)
nPIN CONFIGURATION KC1Type (Top View)
Orientation Mark
Connection VCTL1 VCTL2 VCTL3 VCTL4
nTRUTH TABLE
Pass PC-P1 PC-P2 PC-P3 PC-P4
VCTL1
VCTL2
VCTL3
VCTL4
NOTE: Please note that information this catalog will subject change.
NJG1519KC1
nABSOLUTE MAXIMUM RATINGS (Ta=+25°C, Zs=Zl=50) PARAMETER Input Power Operating Voltage Power Dissipation Operating Temp. Storage Tempe. SYMBOL VCTL Topr Tstg CONDITIONS VCTL(L)=0V, VCTL(H)=3V VCTL(H)-VCTL(L) RATINGS -40~+85 -55~+125 UNITS
nELECTRICAL CHARACTERISTICS General Conditions: Ta=+25°C, Zs=Zl=50, VCTL (L)=0V, VCTL (H)=3V PARAMETER Control Voltage (Low) Control Voltage (High) Control Current Insertion loss Insertion loss Isolation Isolation 0.2dB compression point VSWR Switching time SYMBOL VCTL(L) VCTL(H) ICTL LOSS1 LOSS2 ISL1 ISL2 P-0.2dB VSWRi CONDITIONS f=0.01~2.5GHz f=0.01~2.5GHz f=0.9GHz, Pin=34dBm f=0.9GHz, Pin=34dBm f=1.9GHz, Pin=32dBm f=0.9GHz, Pin=34dBm f=1.9GHz, Pin=32dBm f=1.9GHz on-state ports, f=1.9GHz f=0.1~2.5GHz -0.2 0.85 UNITS
NJG1519KC1
nPACKAGE OUTLINE (FLP10-C1)
3.0±0.1
0.75±0.05 +0.1 0.15 -0.05
2.4±0.1
2.8±0.1
+0.1 -0.05
Lead material Lead surface finish Molding material UNIT Weight
Copper Solder plating Epoxy resin 14mg
Cautions using this product This product contains Gallium-Arsenide (GaAs) which harmful material. into mouth. dispose fire break this product. chemically make powder with this product. waste this product, please obey relating your country. This product damaged with electric static discharge (ESD) spike voltage. Please handle with care avoid these damages.
[CAUTION] specifications this databook only given information without guarantee regards either mistakes omissions. application circuits this databook described only show representative usages product intended guarantee permission right including industrial rights.

03/07/2000 TENTATIVE SP4T SWITCH GaAs MMIC nGENERAL DESCRIPT

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