µPG175TA L-Band DRIVER AMPLIFIER DESCRIPTION µPG175TA G

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µPG175TA L-Band DRIVER AMPLIFIER DESCRIPTION µPG175TA G

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µPG175TA
L-Band DRIVER AMPLIFIER
DESCRIPTION
µPG175TA GaAs MMIC driver amplifier with variable gain function which developed
(Personal Digital Cellular Japan) another L-band application. device operate with having high gain distortion.
FEATURES
Operation Voltage: VDD1 VDD2 fRF: MHz@ Pout distortion: Padj1 typ. Pout dBm, VAGC External input output matching operation Current: typ. Pout dBm, VAGC External input output matching Variable gain control function: typ. VAGC mini-mold package
APPLICATION
Digital Cellular: PDC800M, etc.
ORDERING INFORMATION (PLAN)
PART NUMBER PACKAGE Mini-mold PACKING FORM Carrier tape width Quantity kpcs reel.
µPG175TA-E3
Remark sample order, please contact your local sales office. (Part number sample order: µPG175TA)
Caution must handled with care prevent static discharge because circuit composed GaAs HJ-FET.
information this document subject change without notice.
Document P13470EJ1V0DS00 (1st edition) Date Published 1998 CP(K) Printed Japan
1998
µPG175TA
ABSOLUTE MAXIMUM RATINGS 25°C)
PARAMETERS Supply Voltage Control Voltage Input Power Total Power Dissipation Operating Temperature Storage Temperature SYMBOL VDD1, VDD2 VAGC Ptot Tstg RATINGS 200Note +150 UNIT
Note Mounted double copper clad epoxy glass PWB, +85°C
CONNECTION INTERNAL BLOCK DIAGRAM
CONNECTION VDD1 VDD2 CONNECTION VAGC
View
Bottom View
View
RECOMMENDED OPERATING CONDITIONS 25°C)
PARAMETERS Supply Voltage Control Voltage Input Power SYMBOL VDD1, VDD2 VAGC MIN. +2.7 TYP. +3.0 MAX. +3.3 UNIT
Preliminary Data Sheet
µPG175TA
ELECTRICAL CHARACTERISTICS (Unless otherwise specified, 25°C, VDD1 VDD2 +3.0 /4DQPSK modulated signal input, External input output matching)
PARAMETERS Operating Frequency Total Current Control Current Power Gain Variable Gain Range Adjacent Channel Power Leakage Adjacent Channel Power Leakage Input Return Loss Output Return Loss SYMBOL IAGC Padj1 dBm, VAGC VAGC dBm, VAGC dBm, VAGC Pout dBm, VAGC kHz, Band Width Pout dBm, VAGC ±100 kHz, Band Width External matching External matching TEST CONDITIONS MIN. TYP. MAX. UNIT
Padj2
RLin RLout
Preliminary Data Sheet
µPG175TA
EVALUATION CIRCUIT (Preliminary) VDD1 VDD2 +3.0
VDD1 VDD2
VAGC
Using Evaluation board
1000
Preliminary Data Sheet
µPG175TA
EVALUATION BOARD (Epoxy Glass, 4.6, thickness)
VDD1
VDD2
VAGC
MINI-MOLD PACKAGE DIMENSIONS (UNIT:
0.3-0.0
+0.1
0.13
-0.3
+0.2
-0.1
+0.2
0.95 0.95
+0.2 -0.1
Preliminary Data Sheet
µPG175TA
RECOMMENDED SOLDERING CONDITIONS
This Product should soldered following recommended conditions. Other soldering methods conditions than recommended conditions consulted with sales representatives.
Recommended condition symbol IR35-00-3
Soldering process Infrared reflow
Soldering conditions Package peak temperature: 235°C Hour: within (more than 210°C) Note Time: times, Limited days: Package peak temperature: 215°C Hour: within (more than 200°C) Note Time: times, Limited days: Soldering temperature: less than 260°C, Hour: within Note Time: time, Limited days: area temperature: less than 300°C, Hour: within Note Limited days:
VP15-00-3
Wave Soldering
WS60-00-1
part heating
Note storage days after opening pack, storage conditions 25°C, less than 65%, Caution combined soldering method avoided (However, except area heating method). details recommended soldering conditions surface mounting, refer information document SEMICONDUCTOR DEVICE MOUNTING TECHNOLOGY MANUAL (C10535E).
Preliminary Data Sheet
µPG175TA
[MEMO]
Preliminary Data Sheet
µPG175TA
Caution
Great Care must taken dealing with devices this guide. reason that material devices GaAs (Gallium Arsenide), which designated harmful substance according concerned. Keep concerned especially case removal.
application circuits their parameters reference only intended actual design-ins.
part this document copied reproduced form means without prior written consent Corporation. Corporation assumes responsibility errors which appear this document. Corporation does assume liability infringement patents, copyrights other intellectual property rights third parties arising from device described herein other liability arising from such device. license, either express, implied otherwise, granted under patents, copyrights other intellectual property rights Corporation others. While Corporation been making continuous effort enhance reliability semiconductor devices, possibility defects cannot eliminated entirely. minimize risks damage injury persons property arising from defect semiconductor device, customers must incorporate sufficient safety measures design, such redundancy, fire-containment, anti-failure features. devices classified into following three quality grades: "Standard", "Special", "Specific". Specific quality grade applies only devices developed based customer designated "quality assurance program" specific application. recommended applications device depend quality grade, indicated below. Customers must check quality grade each device before using particular application. Standard: Computers, office equipment, communications equipment, test measurement equipment, audio visual equipment, home electronic appliances, machine tools, personal electronic equipment industrial robots Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment medical equipment (not specifically designed life support) Specific: Aircrafts, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems medical equipment life support, etc. quality grade devices "Standard" unless otherwise specified NEC's Data Sheets Data Books. customers intend devices applications other than those specified Standard quality grade, they should contact sales representative advance. Anti-radioactive design implemented this product.

µPG175TA L-Band DRIVER AMPLIFIER DESCRIPTION µPG175TA G

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