µPD3734A 2660 PIXELS LINEAR IMAGE SENSOR µPD3734A high sensi
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INTEGRATED CIRCUIT
µPD3734A
2660 PIXELS LINEAR IMAGE SENSOR
µPD3734A high sensitivity (Charge Coupled Device) linear image sensor which changes optical images electrical signal. µPD3734A 2660 pixels output amplifier which high gain wide output range, noise. Built-in sample hold circuit converts outputs independent signal from register every pixel continuous video signal. easy interface converter Bi-level converter.
FEATURES
Valid photocell Photocell's pitch High sensitivity Resolution Power supply Drive clock level High speed scan Built-in circuit 2660 pixels TYP. dot/mm CMOS output under operation 0.54 ms/line (S/H used) Sample hold circuit Reset feed-through level clamp circuit Clamp pulse generation circuit Voltage amplifier noise image assign quarter µPD3734 MAX. Compatible with µPD3734 (210 size (shorter side)
Peak response wavelength (green) letter (8.5" 11") size (shorter side)
ORDERING INFORMATION
Part Number Package linear image sensor 22-pin plastic (400 mil)
µPD3734ACY
information this document subject change without notice. Document S11454EJ1V0DS00 (1st edition) Date Published 1996 Printed Japan
1996
µPD3734A
COMPARISON CHART
Item CONFIGURATION RECOMMENDED OPERATING CONDITIONS ELECTRICAL CHARACTERISTICS Average dark signal MAX. (mV) Dark signal non-uniformity (mV) MIN. TYP. MAX. TYP. MAX. TYP. MAX. Data rate MAX. (MHz)
µPD3734ACY
connection (S/H used) (S/H used)
µPD3734CY-1
Digital conditions)
Data rate
Data rate
Power consumption (mW) Image
Total transfer efficiency (test conditions) Reset feed-through noise (mV) MIN. TYP. MAX.
-900 -200 +500 (S/H used) (S/H used)
1000 1800 definition
noise TYP. (mVp-p) Random noise (mV)
TIMING CHART
MIN. (ns) MIN. (ns) MIN. (ns)
Absolute value Refer DEFINITIONS CHARACTERISTICS ITEMS Random noise
Minus plus value definition
DEFINITIONS CHARACTERISTICS ITEMS
Dark signal non-uniformity Random noise
BLOCK DIAGRAM
AGND
VOUT
Voltage Amplifier circuit Reset feed-through level clamp circuit
Optical black (OB) pixels, invalid pixels, valid photocell 2660 pixels, invalid pixels
AGND
µPD3734A
µPD3734A
CONFIGURATION (Top View)
linear image sensor 22-pin plastic (400 mil)
connection
connection
Sample hold clock
Reset gate clock
Output drain voltage
connection
Analog
AGND
connection
connection
VOUT
connection
connection
Output
connection
connection
connection
Shift register clock
Transfer gate clock
Shift register clock
Analog
AGND
connection
connection
connection
PHOTOCELL STRUCTURE DIAGRAM
Channel stopper
Aluminum electrode
µPD3734A
ABSOLUTE MAXIMUM RATINGS
Parameter Output drain voltage Shift register clock voltage Reset gate clock voltage Transfer gate clock voltage Sample hold clock voltage Operating ambient temperature Storage temperature VSHB Tstg Symbol Ratings -0.3 -0.3 -0.3 -0.3 -0.3 Unit
Caution Exposure ABSOLUTE MAXIMUM RATING extended periods affect device reliability; exceeding ratings could cause permanent damage. parameters apply independently.
RECOMMENDED OPERATING CONDITIONS
Parameter Output drain voltage Shift register clock high level Shift register clock level Reset gate clock high level Reset gate clock level Transfer gate clock high level Transfer gate clock level Sample hold clock high level Sample hold clock level Data rate Symbol V1H, V1L, VRBH VRBL VTGH VTGL VSHBH VSHBL used used Conditions MIN. 11.4 -0.3 -0.3 -0.3 -0.3 TYP. 12.0 MAX. 12.6 +0.5 +0.5 +0.5 +0.5 Unit
µPD3734A
ELECTRICAL CHARACTERISTICS
MHz, data rate MHz, storage time light source: 3200 halogen lamp C-500S (infrared filter, mm), input signal clock Vp-p
Parameter Saturation voltage Saturation exposure Photo response non-uniformity Average dark signal Dark signal non-uniformity Power consumption Output impedance Response Response peak wavelength Image Offset level Input capacitance shift register clock Input capacitance reset gate clock Input capacitance sample hold clock Input capacitance transfer gate clock Output fall delay time Register imbalance Total transfer efficiency Dynamic range Reset feed-through noise Sample hold noise VOUT Symbol Vsat PRNU DSNU Daylight color fluorescent lamp Daylight color fluorescent lamp VOUT Light shielding Light shielding Test Conditions MIN. TYP. 0.029 MAX. Unit
CSHB
RFSN SHSN VOUT VOUT data rate Vsat/DSNU Light shielding Light shielding, series resistor -900
-200 +500
times
noise Random noise
used used
mVp-p
Resolution
Modulation transfer function nyquist frequency
µPD3734A
TIMING CHART
1346
1347
VOUT
VOUT (S/H)
(Optical black) pixels Invalid photocell pixels
Valid photocell 2660 pixels Invalid photocell pixels
Remark VOUT Output when used (When used, connect GND). VOUT (S/H) Output when used.
2691 2692 2693 2694 2695 2696
1348
µPD3734A
TIMING CHART
VOUT
RFSN
VOUT (S/H)
Signal
Sampling noise
Remark VOUT (S/H) Output when used.
µPD3734A
TIMING CHART
CROSS POINTS
more
more
Remark Adjust cross point external input resistors.
Parameter t10, t14, t17, MIN. 1000 (2000) TYP. MAX. (100) Unit
µPD3734A
DEFINITIONS CHARACTERISTIC ITEMS
Saturation voltage: Vsat Output signal voltage which response linearity lost. Saturation exposure: Product intensity illumination (lx) storage time when saturation output voltage occurs. Photo response non-uniformity: PRNU peak/bottom ratio average output voltage valid pixels calculated following formula. PRNU
VMAX. VMIN.
Number valid pixels Output voltage each pixel
VMIN. Register Dark level VMAX.
Average dark signal: Output average voltage light shielding.
(mV)
Number valid pixels Output voltage each pixel
Dark signal non-uniformity: DSNU difference between peak bottom output voltage light shielding ADS. DSNU (mV): maximum ADS|
Number valid pixels Output voltage each pixel
Register Dark level DSNU
µPD3734A
Output impedance: Output impedance viewed from outside. Response: Output voltage divided exposure Note that response varies with light source. Image Lag: rate between last output voltage next after read data line.
Light
VOUT
VOUT
VOUT
Register Imbalance: rate difference between average output voltage Even pixels, against average output voltage valid pixels.
Number valid pixels Output voltage each pixel
Noise: Output signal distribution photocell scan.
µPD3734A
Random noise: Random noise defined standard deviation valid photocell output signal with times lines) data sampling dark (light shielding).
(mV)
valid photocell output signal among valid photocells
VOUT
line line
V100
line
This measured level sampling only signal level, (Correlated Double Sampling).
µPD3734A
STANDARD CHARACTERISTIC CURVES
DARK OUTPUT TEMPERATURE CHARACTERISTIC
STORAGE TIME OUTPUT VOLTAGE CHARACTERISTIC
Relative Output Voltage Relative Output Voltage Storage Time (ms) SPECTRAL RESPONSE CHARACTERISTIC Wavelength (nm) 1000 1200
0.25
Operating Ambient Temperature (°C)
Response Ratio
µPD3734A
APPLICATION CIRCUIT EXAMPLE
µPD74HC04
AGND
VOUT
VOUT
PD3734A
AGND
Remark When internal sample hold circuit µPD3734A necessary, connect (SHB) GND.
µPD3734A
PACKAGE DIMENSIONS
LINEAR IMAGE SENSOR 22PIN PLASTIC (400 mil)
(Unit 1bit 0.8±0.3
37.5 44.0±0.3
9.25±0.3
10.16
(1.99) 4.39±0.4
2.35±0.2
0~10°
0.25± 0.05
1.02±0.15 0.46±0.1 25.4
Name Plastic
(5.42)
Dimensions 42.9 8.35
4.21±0.5
2.54
Refractive index
bottom package
surface chip
thickness over chip
22C-1CCD-PKG4
µPD3734A
RECOMMENDED SOLDERING CONDITIONS
When soldering this product, highly recommended observe conditions shown below. other soldering processes used, soldering performed under different conditions, please make sure consult with sales offices. more details, refer document "SEMICONDUCTOR DEVICE MOUNTING TECHNOLOGY MANUAL" (C10535E). Type Through-hole Device
µPD3734ACY: linear image sensor 22-pin plastic (400 mil)
Process Wave soldering (only leads) Partial heating method Conditions Solder temperature: below, Flow time: seconds less. temperature: below, Heat time: seconds less (per each lead).
Caution through-hole device, wave soldering process must applied only leads, make sure that package body does soldered. During assembly care should taken prevent solder flux from contacting plastic cap. optical characteristics could degraded such contact.
µPD3734A
NOTES CLEANING PLASTIC
CLEANING PLASTIC
Care should taken when cleaning surface prevent scratches. optical characteristics will degraded scratched during cleaning. recommend cleaning with soft cloth moistened with recommended solvents below. Excessive pressure should applied during cleaning. requires multiple cleanings recommended that clean surface cloth used.
RECOMMENDED SOLVENTS
following recommended solvents cleaning plastic cap. solvents other than these could result optical physical degradation plastic cap. Please consult your sales office when considering alternative solvent.
Solvents Ethyl Alcohol Methyl Alcohol Isopropyl Alcohol N-methyl Pyrrolidone
Symbol EtOH MeOH
µPD3734A
[MEMO]
µPD3734A
NOTES CMOS DEVICES
PRECAUTION AGAINST SEMICONDUCTORS
Note: Strong electric field, when exposed device, cause destruction gate oxide ultimately degrade device operation. Steps must taken stop generation static electricity much possible, quickly dissipate once, when occurred. Environmental control must adequate. When dry, humidifier should used. recommended avoid using insulators that easily build static electricity. Semiconductor devices must stored transported anti-static container, static shielding conductive material. test measurement tools including work bench floor should grounded. operator should grounded using wrist strap. Semiconductor devices must touched with bare hands. Similar precautions need taken boards with semiconductor devices
HANDLING UNUSED INPUT PINS CMOS
Note: connection CMOS device inputs cause malfunction. connection provided input pins, possible that internal input level generated noise, etc., hence causing malfunction. CMOS device behave differently than Bipolar NMOS devices. Input levels CMOS devices must fixed high using pull-up pull-down circuitry. Each unused should connected with resistor, considered have possibility being output pin. handling related unused pins must judged device device related specifications governing devices.
STATUS BEFORE INITIALIZATION DEVICES
Note: Power-on does necessarily define initial status device. Production process does define initial operation status device. Immediately after power source turned devices with reset function have been initialized. Hence, power-on does guarantee out-pin levels, settings contents registers. Device initialized until reset signal received. Reset operation must executed immediately after power-on devices having reset function.
µPD3734A
application circuits their parameters references only intended actual designin's.
part this document copied reproduced form means without prior written consent Corporation. Corporation assumes responsibility errors which appear this document. Corporation does assume liability infringement patents, copyrights other intellectual property rights third parties arising from device described herein other liability arising from such device. license, either express, implied otherwise, granted under patents, copyrights other intellectual property rights Corporation others. While Corporation been making continuous effort enhance reliability semiconductor devices, possibility defects cannot eliminated entirely. minimize risks damage injury persons property arising from defect semiconductor device, customer must incorporate sufficient safety measures design, such redundancy, fire-containment, anti-failure features. devices classified into following three quality grades: "Standard", "Special", "Specific". Specific quality grade applies only devices developed based customer designated "quality assurance program" specific application. recommended applications device depend quality grade, indicated below. Customers must check quality grade each device before using particular application. Standard: Computers, office equipment, communications equipment, test measurement equipment, audio visual equipment, home electronic appliances, machine tools, personal electronic equipment industrial robots Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment medical equipment (not specifically designed life support) Specific: Aircrafts, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems medical equipment life support, etc. quality grade devices "Standard" unless otherwise specified NEC's Data Sheets Data Books. customers intend devices applications other than those specified Standard quality grade, they should contact Sales Representative advance. Anti-radioactive design implemented this product.
94.11
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